• Title/Summary/Keyword: Photo resist

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A Study on Rapid Fabrication of Micro Lens Array using 355nm UV Laser Irradiation (355nm UV 레이저를 이용한 마이크로 렌즈 어레이 쾌속 제작에 관한 연구)

  • Je, S.K.;Park, S.H.;Choi, C.K.;Shin, B.S.
    • Transactions of Materials Processing
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    • v.18 no.4
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    • pp.310-316
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    • 2009
  • Micro lens array(MLA) is widely used in information technology(IT) industry fields for various applications such as a projection display, an optical power regulator, a micro mass spectrometer and for medical appliances. Recently, MLA have been fabricated and developed by using a reflow method having the processes of micro etching, electroplating, micro machining and laser local heating. Laser thermal relaxation method is introduced in marking of microdots on the surface of densified glass. In this paper, we have proposed a new direct fabrication process using UV laser local thermal-expansion(UV-LLTE) and investigated the optimal processing conditions of MLA on the surface of negative photo-resist material. We have also studied the 3D shape of the micro lens obtained by UV laser irradiation and the optimal process conditions. And then, we made chrome mold by electroplating. After that, we made MLA using chrome mold by hot embossing processing. Finally, we have measured the opto-physical properties of micro lens and then have also tested the possibility of MLA applications.

Study on the FPCS for Photoresist Coating of Semiconductor Manufacturing Process (반도체 생산공정의 감광액 도포를 위한 FPCS에 관한 연구)

  • Park, Hyoung-Keun
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.14 no.9
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    • pp.4467-4471
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    • 2013
  • In this research, developed full-scan photoresist coating system(FPCS) can improve the efficiency of the photoresist coating system essential for spinner equipment in nano semiconductor manufacturing process. The devices developed in this research, which can be swiftly replaced in case abnormal state element changes or wafer manufacturing defect occurs, are anticipated to improve module yield as well as real-time monitoring on the state element in order to prevent the complex process defect due to the photoresist miss coating.

Humidity Induced Defect Generation and Its Control during Organic Bottom Anti-reflective Coating in the Photo Lithography Process of Semiconductors

  • Mun, Seong-Yeol;Kang, Seong-Jun;Joung, Yang-Hee
    • Journal of information and communication convergence engineering
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    • v.10 no.3
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    • pp.295-299
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    • 2012
  • Defect generation during organic bottom anti-reflective coating (BARC) in the photo lithography process is closely related to humidity control in the BARC coating unit. Defects are related to the water component due to the humidity and act as a blocking material for the etching process, resulting in an extreme pattern bridging in the subsequent BARC etching process of the poly etch step. In this paper, the lower limit for the humidity that should be stringently controlled for to prevent defect generation during BARC coating is proposed. Various images of defects are inspected using various inspection tools utilizing optical and electron beams. The mechanism for defect generation only in the specific BARC coating step is analyzed and explained. The BARC defect-induced gate pattern bridging mechanism in the lithography process is also well explained in this paper.

Ag/a-$Se_{75}$$Ge_{25}$박막의 Ag Doping Mechaism 해석[I]

  • 김민수;이현용;정홍배;이영종
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.05a
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    • pp.113-115
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    • 1994
  • We considered the ion and photo-induced properties as a function of wavelength by exposing the light over the band gap of a-Ag/a-$Se_{75}$$Ge_{25}$ and the low-energy defocused $Ga^{+}$ ion beam on Ag/a-$Se_{75}$$Ge_{25}$ thin film. This film acts as a negative resist for photo or ion beam lithography. We observed that the absorbance coefficient decreased with increasing the photo-exposing time and exposing the ion beam. The bandgap shifts toward longer wavelength called a "darkening effect" are observed in the films exposed to both photons and ions. We suggest that a primary step in the Ag layer and a secondary step is in a-$Se_{75}$$Ge_{25}$ film layer.

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Direct Writing Lithography Technique for Semiconductor Fabrication Process Using Proton Beam

  • Kim, Kwan Do
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.1
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    • pp.38-41
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    • 2019
  • Proton beam writing is a direct writing lithography technique for semiconductor fabrication process. The advantage of this technique is that the proton beam does not scatter as they travel through the matter and therefore maintain a straight path as they penetrate into the resist. The experiment has been carried out at Accelerator Mass Spectrometry facility. The focused proton beam with the fluence of $100nC/mm^2$ was exposed on the PMMA coated silicon sample to make a pattern on a photo resist. The results show the potential of proton beam writing as an effective way to produce semiconductor fabrication process.

Risk Assessment of Semiconductor PR Process based on Frequency Analysis of Flammable Material Leakage (반도체 PR 공정의 인화성 물질 누출 빈도분석을 통한 위험성 평가)

  • Park, Myeongnam;Chun, Kwang-Su;Yi, Jinseok;Shin, Dongil
    • Journal of the Korean Institute of Gas
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    • v.25 no.5
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    • pp.1-10
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    • 2021
  • Semiconductor Photo Resist (PR) automation equipment uses a mixture of several flammable substances, and when it leaks during the process, it can lead to various accidents, therefore, risk assessment is necessary. This study analyzed the frequency of leakage of Acetone and PGMEA used in PR automation equipment and the frequency at which such leakage could lead to a fire accident through the frequency analysis method, and evaluated the need for additional risk reduction measures in the current facility. Based on the process leak data and ignition probability data of IOGP, leak frequency analysis and ignition probability were derived, and the frequency of actual fire accidents was analyzed by combining them. The frequency of material leakage in semiconductor PR process is 7.30E-03/year, and fire accidents can occur by acetone that exists above the flash point when the material is leaked, the frequency was calculated at the level of 1.24E-05/year. According to the UK HSE, for a major accident occurring with a frequency of 1.24E-05/year, it is defined as "Broadly Acceptable", a level that does not require additional measures for risk reduction when it causes 7 or less deaths, and due to the process operated by two people, no additional risk reduction are required.

CFD-based Fire Accident Impact Analysis in Clean Room for semiconductor PR Process (반도체 PR 공정의 클린룸내 CFD 기반 화재 사고 영향 분석)

  • Chun, Kwang-Su;Yi, Jinseok;Park, Myeongnam
    • Journal of the Korean Institute of Gas
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    • v.25 no.6
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    • pp.35-44
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    • 2021
  • The PR (Photo Resist) process in the semiconductor process is a process that uses a mixture of flammable substances. Due to the process equipment is installed in a clean room and when flammable substances leak, there is a high risk of suffocation, fire, and explosion. It is necessary to analyze the impact of accidents that may occur during operation and to evaluate whether the safety of workers can be guaranteed. In this study, the value of radiant heat and temperature change at the monitor point set up virtual inside the clean room was confirmed through CFD simulation of 10 leak and fire scenarios using the FLACS CFD - Fire Module. A fire that occurs inside a clean room transfers high radiant heat to the inter-story structure, but its scope is quite limited, and it is unlikely that it will collapse in a single fire accident. There was no scenario in which two stairs leading to the exit were exposed to high radiant heat at the same time due to a fire accident, therefore workers were able to escape in case of a fire. In addition, it was confirmed that the level of radiant heat and temperature rise rapidly decreased as they moved downstairs. According to the API 520 standard, workers exposed to 6.31 kW/m2 of radiant heat that workers can withstand for 30 seconds were confirmed that it was possible to sufficiently escape from the inside.

Electric Circuit Fabrication Technology using Conductive Ink and Direct Printing

  • Jeong, Jae-U;Kim, Yong-Sik;Yun, Gwan-Su
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.12.1-12.1
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    • 2009
  • For the micro conductive line, memory device fabrication process use many expensive processes such as manufactur-ing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because nano-metal particles contained inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as FPCB, PCB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line on flexible PCB substrate for the next generation electronic circuit using Ag nano-particles contained ink. To improve the line tolerance on flexible PCB, metal lines are fabricated by sequential prinitng method. Sequential printing method has vari-ous merits about fine, thick and high resolution pattern lines without bulge.

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A Study on the Laser Direct Imaging for FPD ( I ) (평판 디스플레이용 Laser Direct Imaging에 관한 연구( I ))

  • Kang, H.S.;Kim, K.R.;Kim, H.W.;Hong, S.K.
    • Proceedings of the Korean Society of Laser Processing Conference
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    • 2005.11a
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    • pp.37-41
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    • 2005
  • When screen size of the Flat Panel Display (FPD) becomes larger, the traditional photo-lithography using photomasks and UV lamps might not be possible to make patterns on Photo Resist (PR) material due to limitation of the mask size. Though the maskless photo-lithography using UV lasers and scanners had been developed to implement large screen display, it was very slow to apply the process for mass-production systems. The laser exposure system using 405 nm semi-conductor lasers and Digital Micromirror Devices (DMD) has been developed to overcome above-mentioned problems and make more than 100 inches FPD devices. It makes very fine patterns for full HD display and exposes them very fast. The optical engines which contain DMD, Micro Lens Array (MLA) and projection lenses are designed for 10 to 50 ${\mu}m$ bitmap pattern resolutions. The test patterns for LCD and PDP displays are exposed on PR and Dry Film Resists (DFR) which are coated or laminated on some specific substrates and developed. The fabricated edges of the sample patterns are well-defined and the results are satisfied with tight manufacturing requirements.

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