• Journal of the Korean Society for Precision Engineering
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• v.29 no.11
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• pp.1164-1169
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• 2012

This paper presents a study of an integrated infrared (IR) photo sensor for display application. We fabricated hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and hydrogenated amorphous silicon germanium thin film transistor (a-SiGe:H TFT) which were bottom gate structure. We investigated the dependence of a-SiGe:H TFT characteristics on incident wavelengths. We proposed photo sensor which responded to wavelengths of IR region. Proposed pixel circuit of photo sensor was consists of switch TFT and photo TFT, and one capacitor. We developed integrated photo sensor circuit and investigated the performance of the proposed sensor circuit according to the input wavelengths. The developed photo sensor circuit with a-SiGe:H TFT was suitable for IR.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.55-56
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• 2008

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in the case of illumination from various lightsources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from spectral analysis of light sources.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.844-847
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• 2008

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in case of illumination from various light sources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight. The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from the spectral characteristics of light sources.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.170-173
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• 2007

Cruciform conjugated molecule, 4(DP3T)-benzene bearing terthiophene moieties has been synthesized through Horner-Emmons Reaction using 5-dodecyl-5"-aldehyde-[2,2';5',2"] terthiophene as dendrons and octaethyl benzene- 1,2,4,5-tetrayltetrakis(methylene)tetraphosphonate as the core unit; this molecule has been fully characterized. The terthiophene-based molecule exhibits good solubility in common organic solvents and good self-film forming property. They are intrinsically crystalline as they exhibit well-defined X-ray diffraction patterns from uniform orientations of molecules. Thus, intermolecular interaction can be enhanced to affect the carrier transport phenomena after annealing at $148^{\circ}C$. The semiconducting property of 4(DP3T)-benzene have been evaluated in organic field-effect transistors. 4(DP3T)-benzene exhibit carrier mobility as high as $(6.6{\pm}0.5)$ ${\times}$ $10^{-6}cm^2V^{-1}s^{-1}$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.49.2-49.2
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.187-190
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• 2000

We fabricated general photo diode, surface etched photo diode and floating gate MOSFET by CMOS process. In a design stage, we expect that surface etched photo diode will be improved as to photo sensitivity. However, because the surface of silicon was damaged in etching process, the surface etched diode had a high dark current as well as low photo current level. Finally, we examined the current-voltage properties for the floating gate MOSFET on n-well and confirmed that the device can be act as an efficient photo-sensor. The floating gate MOSFET was operated in parasitic bipolar transistor mode.

• Magazine of the Korean Society of Agricultural Engineers
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• v.43 no.3
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• pp.39-45
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• 2001

The purpose of this study is to develop an economic and practical radiation sensor using photo diodes which is useful for estimating ET in greenhouse environment. An electronic circuit was then designed. Out put signal of photo diode is amplified with a LM318 transistor and is displayed in a LCD with value from zero to 255. The output signal was compared with that of a ready-made pyranometer. The behavior of the photo diode radiation sensor was evaluated by increasing number of photo diodes. The sensor became more reliable with increased number of photo diodes. Developed radiometer was tested with calibrated relation between pyranometer radiation and photo diode output. It was showed that the photo diodes radiometer would be applicable for the greenhouse environment.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.7
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• pp.1179-1184
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• 2003

The technique for measuring the rotational speed of tappet in direct acting type valve train system has been developed. The optic signal monitoring system with laser and optic fiber was designed to follow the signal of tappet rotation. The system was based on ON/OFF signal generation from the additional encoder teeth under the tappet with optic fibers attached photo transistor. The data showed that tappet rotation was affected by offset, oil temperature and cam shaft operating speed. Also it was found that tappet rotation increases with oil temperature. Tappet spin was delayed 10∼s20$^{\circ}$ cam angle after valve opening. The instantaneous rotational speed of tappet was reciprocal to cam shaft speed and the tappet and the cam angle ratio was located in the range of 0.1∼0.3.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.220-220
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• 2010

The beta-amyloid protein ($A_{\beta}$) is well known for main cause of Alzheimer disease (AD). Generally, detection of $A_{\beta}$ is carried out by using fluorescent material or DNA test, but these process is long time and expensive process. Therefore, in this research, we investigated the simple diagnosis method to detect the $A_{\beta}$ by using photo-transistor.

• Journal of Biosystems Engineering
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• v.17 no.4
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• pp.404-409
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• 1992

It is important to measure the somatic informations for stockbreeding automatization. This study was carried out for the development of wireless measurement system of sphygmus in living animals. In meauring sphygmus counting with the single-channel telemety system, a LED-photo transistor sensor showed more sensitivity to the change of blood pressure than a piezo-electric sensor based pressure sensor. The LED-photo transistor sensor resulted ${\pm}1.29%$ of measurement error of sphygmus counting. In the process of transmitting and receiving the blood pressure signal for counting sphygmus, noises were mixed with, and the noises made the counting almost impossible. Auto-correlation analysis technique was applied to the signal data to extract the sphygmus information, and the technique was proved to be very effective.