• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1393-1398
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• 2009

Conventionally, etching is first considered for microelectronics fabrication process and is specially important in process of a-Si:H thin film transistor for LCD. In this paper, we stabilize properties of device by development of wet and dry etching process. The a-Si:H TFTs of this paper is inverted staggered type. The gate electrode is lower part. The gate electrode is formed by patterning with length of 8 ${\mu}$m${\sim}$16 ${\mu}$m and width of 80${\sim}$200 ${\mu}$m after depositing with gate electrode (Cr) 1500 ${\AA}$under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photo resistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN:H (2000 ${\mu}$m), a-Si:H(2000 ${\mu}$m) and n+a-Si:H (500 ${\mu}$m), We have deposited n-a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. In the fabricated TFT, the most frequent problems are over and under etching in etching process. We were able to improve properties of device by strict criterion on wet, dry etching and cleaning process.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.922-925
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• 1999

The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25${\mu}{\textrm}{m}$ CD by E-ICP and ICP reveals that E-ICP has better quality than ICP The etch rate and the microloading effect was improved in E-ICP Especially, the problem of the lateral etch was improved in E-ICP.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.2
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• pp.155-161
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• 2016

This paper proposes a novel fabrication method for a capacitive type micro-accelerometer with uniform nano-gap using photo-assisted electro-chemical etching. The sensitivity of the accelerometer should be improved while the electrodes between the inertial mass and the sensing comb should be narrowed. In this paper the nano-gap trench structure is fabricated using the photo-assisted electrochemical etching method. The sensor was designed and analysed using ANSYS simulator. The characteristics of the etching were observed according to the dc bias, the light intensity, the composition of the solution, the temperature of the solution, and the pattern pitch variation. The optimum etching conditions were dc bias of 2V, Blue LED of 20mA, 49wt% HF:DMF:D.I.Water=1:20:10, the pattern pitch of $20{\mu}m$. Uniform trench structure with width of 344nm and depth of $11.627{\mu}m$ are formed using the optimum condition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.60-63
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• 1999

Application of reactive ion etching (RIE) technique to Ta-Al alloy thin film with a thickness of $1000{\AA}$ was studied. $CF_{4}$ gas could be used effectively to etch the Ta-Al alloy thin film. The etching rate in the thin film with Ta content of 50 mol% was about $67{\AA}/min$. NO selectivity between the Ta-Al alloy film and $SiO_{2}$ film was observed during the etching using the $CF_{4}$ gas. The etching rate of the $SiO_{2}$ layer was 12 times faster than that of the Ta-Al alloy thin film. It was also observed that photoresist of AZ5214 was more useful than Shiepley 1400-27 in RIE with the $CF_{4}$ gas.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.180-181
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• 2015

본 논문에서는 ICP Poly Etcher를 이용한 Dry Etch에서 몇가지 공정조건의 변화에 따른 Etching 특성 변화를 연구하였다. 주요 가스유량들이 증가 할 때, Poly-Si 의 Etch rate는 증가 하였으며 Uniformity는 나빠진 것을 확인 할 수 있었고 다른 특성들은 특별한 변화를 보이지 않았다. 주요 Gas인 HBr의 증가는 PR(Photo Resist)와 Uniformity에 영향을 주었다. 이 논문을 통해 HBr의 유량이 Poly-Si Etching에 영향을 주는 결과를 알아 볼 수 있었고 HBr 가스의 유량 증가가 Polymer의 생성에 영향을 줘 Selectivity와 Uniformity를 증가 시킨다는 것도 확인 해 볼 수 있었다.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2001.10a
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• pp.186-189
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• 2001

The main method in micro-etching process, used in manufacturing semiconductors, electronic components, circuits, is Photo Masking method that exposes and develops on the photo-sensitivity solutions or films. This method enables one to process highly precisely, $\pm$0.03 mm in end line location area. But this has limits in a high speed / wide width process, difficulties in endless masking, and the problem of high price. We have developed the direct masking method to make use of Gravure printing, widely used in grocery packing sheet printing. We made cylinder tools to influence the masking quality by laser stream process. We have confirmed that the end line location accuracy in the line width of the product is improved from 0.12 mm to $\pm$0.07 mm level, after etching process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.72-73
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• 2012

Metal line을 형성하는 방법에는 그라비아 인쇄, 잉크젯 인쇄, photo 공정 후 박막 증착 공정 등을 많이 사용한다. 본 연구에서는 Micro-imprinting 공정과 DFR photo lithography 공정을 통해 음각의 미세한 pattern을 형성한 후 sputtering과 printing을 이용하여 pattern의 filling을 통해 metal line을 구현하는 것을 목표로 하였다. Pattern을 형성한 후 RIE 공정을 통해 기판 표면의 친수성 처리를 하고, SAM 공정을 통해 코팅 막의 소수성 처리를 하였다. Sputtering과 전면 프린팅 및 건조 후 strip 공정을 통해 metal line을 형성하고, 이에 대한 표면 특성과 전기적 특성을 분석하였다.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1430-1431
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• 2006

We investigated the formation of 2-dimension hologram grating by means of selective etching characteristic and photo-expansion effect according to photo irradiation on amorphous As-Ge-Se-S thin film. By method of phase holography, we made the 2-dimensional hologram grating by each (S:P) and ($+45^{\circ}:-45^{\circ}$) polarized beam with DPSS laser(532nm) and He-Ne laser(632nm). A recording property was observed at each polarized beam through 2-dimensional hologram surface relief grating. Chalcogenide thin film was etched selectively by NaOH solution after the formation of 1-dimensional diffraction grating. And then etched sample was rotated 90 degree to fabricate 2 dimensional hologram grating. We found that it was observed the formation of 2-dimensional hologram grating by AFM(Atomic Force Microscopy).

• Transactions of Materials Processing
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• v.5 no.2
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• pp.97-104
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• 1996

It is very important to obtain the knowledge of loads and flow patterns in most processes because these information are the fundamental data of die design and process design. The objective of present study is to investigate loads and metal flow patterns for various process conditions in flat die extrusion of square-bars from circular billets. For analyzing the metal flow patterns of the billets photo etching is used on sections of split specimen. From this method metal flow patterns are analyzed for various area reductions friction factors and punch stroke through the process from initial-stage to final-stage. Experiments are carried out with hard solder billets at room temperature.

• International Journal of Precision Engineering and Manufacturing
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• v.4 no.4
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• pp.51-56
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• 2003

Generally, the build-up printed circuit board manufactured by a sequential process involving etching, plating, drilling, etc, which requires many types of equipments and long lead time. Etching process is suitable for mass production, however, it is not adequate for manufacturing a prototype in the development stage. In this study, we introduce a screen printing technology for prototyping a build-up printed circuit board. As for the material, photo/thermal curable resin and conductive paste are used for the formation of dielectric and conductor. The build-up structure is made by subsequent processes such as formation of a liquid resin thin layer, solidification by a UV/IR light, and via hole filling with a conductive paste. By use of photo curable resin, productivity is greatly enhanced compared with thermal curable resin. Finally, the basic concept and the possibility of build-up printed circuit board prototyping are proposed in comparison with the conventional process.