• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.339-339
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• 2010

Photo-assisted wet chemical etching of GaN thin film was studied using KOH based solutions. A $2{\mu}m-2{\mu}m$ titanium line-and-space pattern was used as a etching mask. It is found that the etching characteristics of the GaN thin film is strongly dependent on the pattern direction by unisotropic property of KOH based solution. When the pattern was aligned to the [$11\bar{2}0$] directions, ($10\bar{1}n$)-facet is revealed constructing V-shaped sidewalls.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.398-400
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• 1998

In this paper, the etching studies for n-GaN were carried out using the wet chemical, the photo-enhanced-chemical, and the electro-chemical etching methods. The experimental results show that n-GaN is etched in diluted NaOH solution at room temperture and the etched thickness of NaOH and electron concentrations. Te etching rate of n-GaN samples with n.simeq.1*10$^{19}$ cm$^{-3}$ were used to compare the photo-enhanced-chemical etching with the electrochemical etching methods. The removed thickness was 680.angs./25min by the electrochemical etching methods. The removed thickness was 680 .angs./25min by the electrochemical etching method ad 784.angs./25min by the photoenhanced-chemical etching method. The patterns are 100.mu.m*100.mu.m rectangulars covered with SiO$_{2}$film. It is shown that the profile of etched side-wall of the pattern is vertical without dependance of the n-GaN orientations.

• Journal of Dental Rehabilitation and Applied Science
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• v.37 no.1
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• pp.23-30
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• 2021

Purpose: The aim of this study was to investigate effect of zirconia on osseointegration and Surface appearance by surface treatments using various acid solution. Materials and Methods: The prepared zirconia disks were treated with hydrofluoric acid solution and photo-assisted etching under various condition. The surface was analyzed by SEM and the surface roughness was analyzed by using surface profiler. The osteogenic effect of MC3T3-E1 cells was assessed via fluorescent staining observation and reverse transcriptase-polymerase chain reaction (RT-PCR). Results: Various roughness were obtained according to the surface treatment method. The surface roughness increased in the group treated with hydrofluoric acid solution, but that had week network structure. In the method using photo-assisted etching, the surface roughness increased in micro units. Cell reaction showed better results in the photo-assisted etching group than in the hydrofluoric acid-treated group (P < 0.05). And it showed even osteoblastic cell distribution in photo-assisted etching group. Conclusion: As a result, the photo-assisted etching method is more effective than the simple acid solution treatment for zirconia treatment for osseointegration.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.249-254
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• 1998

The etching experiments for n-GaN were done using the wet chemical, photo-enhanced-chemical and electro-chemical etching methods. The experimental results show that n-GaN is etched is diluted NaOH solution at room temperature and the removed thickness of n-GaN is linearly increased with etching times. The etching rate of the photo-enhanced-chemical and electro-chemical etching methods are several times higher than that of the wet chemical method. The maximum etching rate of n-GaN with $n{\fallingdotseq}1{\times}10^{19}cm^{-3}$ was 164 $\AA$/min under the experimental condition of the Photo-enhanced-chemical etching. The etching rates of n-GaN are very much dependant on the electron concentrations of the samples. The pattern is $100{\mu}m{\times}100{\mu}m$ rectangulars covered with $SiO_2$film. It is shown that the etched side-wall charactistics of the pattern is vertical without dependance of the n-GaN orientations, and the smoothness of etched n-GaN surface is fairly flat.

• Journal of Magnetics
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• v.12 no.2
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• pp.81-83
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• 2007

Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an inductively coupled plasma-reactive ion etching (ICP-RIE) system using $CHF_3/O_2/NH_3$ discharges exchanging $CHF_3$ for $CH_4$ gas gradually. Experimental results showed that the organic photo-resist mask can be applied to the NiFe etching. In the case of the Ti metal mask, it was found that the etching-selectivity Ti against NiFe was significantly varied from 7.3 to ${\sim}0$ by changing $CHF_3/CH_4/O_2/NH_3$ to $CH_4/O_2/NH_3$ discharges used in the ICP-RIE system. These results show that the present RIE of NiFe was dominated by a chemical reaction rather than a physical sputtering.

• Design & Manufacturing
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• v.12 no.1
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• pp.47-51
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• 2018

As the IT industry rapidly progresses, the functions of electronic devices and display devices are integrated with high density, and the model is changed in a short period of time. To implement the integration technology, a uniform micro-pattern implementation technique to drive and control the product is required. The most important technology for the micro pattern generation is the exposure processing technology. Failure to implement the basic pattern in this process cannot satisfy the demands in the manufacturing field. In addition, the conventional exposure method of the mask method cannot cope with the small-scale production of various types of products, and it is not possible to implement a micro-pattern, so an alternative technology must be secured. In this study, the technology to implement the required micro-pattern in semiconductor processing is presented through the photolithography process and plasma etching.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.2
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• pp.130-136
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• 2000

Generally, the build-up printed circuit board manufactured by the sequential process with etching, plating, drilling etc. requires many types of equipments and lead time. Etching process is suitable for mass production, however, it is not adequate for manufacturing prototype in the developing stage. In this study, we introduce a screen printing technology to prototyping a build-up printed circuit board. As for the material, photo/thermal curable resin and conductive paste are used for the formation of dielectric and conductor. The build-up structure is made by subsequent processes such as the formation of liquid resin thin layer, the solidification by UV/IR light, and via filling with conductive paste. By use of photo curable resin, productivity is greatly enhanced compared with thermal curable resin. Finally, the basic concept and the possibility of build-up printed circuit board prototyping are proposed in comparison with to the conventional process.

• Journal of information and communication convergence engineering
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• v.10 no.3
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• pp.295-299
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• 2012

Defect generation during organic bottom anti-reflective coating (BARC) in the photo lithography process is closely related to humidity control in the BARC coating unit. Defects are related to the water component due to the humidity and act as a blocking material for the etching process, resulting in an extreme pattern bridging in the subsequent BARC etching process of the poly etch step. In this paper, the lower limit for the humidity that should be stringently controlled for to prevent defect generation during BARC coating is proposed. Various images of defects are inspected using various inspection tools utilizing optical and electron beams. The mechanism for defect generation only in the specific BARC coating step is analyzed and explained. The BARC defect-induced gate pattern bridging mechanism in the lithography process is also well explained in this paper.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.279-280
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• 2009

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.187-190
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• 2000

We fabricated general photo diode, surface etched photo diode and floating gate MOSFET by CMOS process. In a design stage, we expect that surface etched photo diode will be improved as to photo sensitivity. However, because the surface of silicon was damaged in etching process, the surface etched diode had a high dark current as well as low photo current level. Finally, we examined the current-voltage properties for the floating gate MOSFET on n-well and confirmed that the device can be act as an efficient photo-sensor. The floating gate MOSFET was operated in parasitic bipolar transistor mode.