• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 학술회의 논문집 정보 및 제어부문 B
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• pp.793-796
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• 2003

The electronics of a mobile robot ill nuclear facilities is required to satisfied the reliability to sustain survival in its radiation environment. To know how much radiation the robot has been encountered to replace sensitive electronic parts, a dosimeter to measure total accumulated dose is necessary. Among many radiation dosimeters or detectors, semiconductor radiation sensors have advantages in terms of power requirements and their sires over conventional detectors. This paper describes the use of the radiation-induced threshold voltage change of a commercial power pMOSFET as an accumulated radiation dose monitoring mean and that of the photo-current of a commercial PIN Diode as a dose-rate measurement mean. Commercial p-type power MOSFETs and PIN Diodes were tested in a Co-60 gamma irradiation facility to see their capabilities as radiation sensors. We found an inexpensive commercial power pMOSFET that shows good linearity in their threshold voltage shift with radiation dose and a PIN diode that shows good linearity in its photo-current change with dose-rate. According to these findings, a radiation hardened hybrid electronic radiation dosimeter for nuclear robots has been developed for the first time. This small hybrid dosimeter has also an advantage in the point of view of reliability improvement by using a diversity concept.

• Environmental Engineering Research
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• 제19권3호
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• pp.293-298
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• 2014

An anaerobic photosynthetic treatment process utilizing purple non-sulfur photosynthetic bacteria (PNSB) was applied to the recovery of organic carbon from food processing wastewater. PNSB cells, by-product from the treatment, have high nutrition such as proteins and vitamins which are a good alternative for fish feed. Effects of light source on performance of anaerobic photosynthetic process were investigated in this study. Two bench-scale photo-bioreactors were lighted with infrared light emitting diodes (LEDs) and tungsten lamps covered with infrared transmitting filter, respectively, aiming to supply infrared light for photosynthetic bacteria growth. The photo-bioreactors were operated to treat noodle-processing wastewater for 323 days. Hydraulic retention time (HRT) was set as 6 days. Organic removals in the photo-bioreactor lighted with infrared LEDs (91%-95%) was found higher than those in photo-bioreactor with tungsten lamps with filter (79%-83%). Biomass production in a 150 L bench-scale photo-bioreactor was comparable to a 8 L small-scale photo-bioreactor in previous study, due to improvement of light supply efficiency. Application of infrared LEDs could achieve higher treatment performance with advantages in energy efficiency and wavelength specifity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.471.2-471.2
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• 2014

We demonstrate here that an improvement in precursor film density (green density) leads to a great enhancement in the photovoltaic performance of CuInSe2 (CISe) thin film solar cells fabricated with Cu-In nanoparticle precursor films via chemical solution deposition. A cold-isostatic pressing (CIP) technique was applied to uniformly compress the precursor film over the entire surface (measuring 3~4 cm2) and was found to increase its relative density (particle packing density) by ca. 20%, which resulted in an appreciable improvement in the microstructural features of the sintered CISe film in terms of lower porosity, reduced grain boundaries, and a more uniform surface morphology. The low-bandgap (Eg=1.0 eV) CISe PV devices with the CIP-treated film exhibited greatly enhanced open-circuit voltage (VOC, from 0.265 V to 0.413 V) and fill factor (FF, from 0.34 to 0.55), as compared to the control devices. As a consequence, an almost 3-fold increase in the average power conversion efficiency, 3.0 to 8.2% (with the highest value of 9.02%), was realized without an anti-reflection coating. A diode analysis revealed that the enhanced VOC and FF were essentially attributed to the reduced reverse saturation current density (j0) and diode ideality factor (n). This is associated with the suppressed recombination, likely due to the reduction in recombination sites such as grain/air surfaces (pores), inter-granular interfaces, and defective CISe/CdS junctions in the CIP-treated device. From the temperature dependences of VOC, it was confirmed that the CIP-treated devices suffer less from interface recombination.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 추계학술대회
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• pp.11-12
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• 2012

본 논문에서는 LED(Light Emitting Diode)조명을 통해 기존 사용되는 적외선 센서로 가시광통신의 기술이 효율적으로 송 수신 가능한지 성능 분석을 하기 위한 연구이다. LED는 전기를 빛으로 바꾸는 성질을 이용하여 조명으로 활용한다. LED 조명 통신 융합 원리는 LED와 PD(Photo Diode)의 깜박임 송수신을 기본 원리로 하여 조명 기능을 유지하면서 통신에서 동시에 실현하게 가능하게 한다. LED의 기본 구조 하에 여러 IT 응용기술이 발전하게 되었고, 현재 실생활에 접하게 되었다. LED조명이 있는 곳이라면 어디서나 무선 통신을 할 수 있는 기술을 하고자, 널리 이용되고 있는 PD인 적외선 센서를 활용하여 시스템의 H/W의 초기 값을 ~1m 이상으로 하고 전체 시스템 속도 향상 시킬 수 있는 가시광 데이터 전송 시스템을 이루었다. 사용된 LED모듈이 통신에 가능한지 성능 분석을 하고, 구현된 연구의 LED 및 적외선 센서를 구성하여 예측 및 통신 거리에 대해 나타내고 응용방법과 가능성에 대해 연구하고자 한다.

• Toxicological Research
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• 제24권3호
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• pp.227-233
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• 2008

To detect lead ions using electrochemical voltammetric analysis, Infrared Photo-Diode Electrode(IPDE) was applied via cyclic and square wave stripping voltammetry. Lead ions were deposited at 0.5 V(versus Ag/AgCl) accumulation potential. Instrumental measurements systems were made based on a simple and compact detection system. The stripping voltammetric and cyclic voltammetric optimal parameters were searched. The results yielded a cyclic range of $40{\sim}240mgl^{-1}$ Pb(II) and a square wave stripping working range of $0.5{\sim}5.00mgl^{-1}$ Pb(II). The relative standard deviation at 2 and 4 $mgl^{-1}$ Pb(II) was 0.04% and 0.02%(n=15), respectively, using the stripping voltammetric conditions. The detection limit was found to be 0.05 $mgl^{-1}$ with a 40 sec preconcentration time. Analytical interference ions were also evaluated. The proposed method was applied to determine lead ions in various samples.

• 마이크로전자및패키징학회지
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• 제12권4호통권37호
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• pp.323-330
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• 2005

저밀도 파장분할 방식 (CWDM)을 사용하는 광중계기와 광전송시스템에 사용할 수 있는 PIN PD (Positive Intrinsic Negative Photo Diode)를 제작하고 특성을 알아보았다. 특별히 제작된 CWDM 필터를 PD 패키지에 포함하여 일체형으로 제작하여 기존에 별도로 연결하여 사용하던 방법에 비해 작업성과성능 그리고 가격면에서 우수함을 보였다. 일체형 저밀도 파장분할 PD를 제작하기 위해서 CWDM 필터 조립 단계, PD 패키징 단계, 완제품 최종 조립 및 측정 단계의 3단계 과정을 수행하였다. 제작된 PD는 0.5 dB 대역폭이 17 nm, 투과 단자의 인접채널의 고립도는 60 dB 이상으로 측정되었고, 반사 단자의 고립도는 20 dB 이상으로 측정되었다. 무선주파수 특성을 위해 IMD3를 측정결과 63dBc 이상이었으며 PD의 응답도는 제작 샘플 23개중 20개가 0.9A/W 이상이었다. 일체형으로 제작함으로써 전체적인 삽입손실이 0.4-0.7 dB 정도 줄었다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 춘계학술대회 논문요약집
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• pp.223-223
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• 2004

반도체 및 TFT LCD 제조 공정에서 핵심 공정인 Photo 공정은 PR(Photo Resist, 감광액) Coating -) Exposure(노광) -. Develop(현상)으로 이루어져 있다. 이중 Exposure 공정에 사용되는 장치가 노광장비이다. 노광장비는 Mask Aligner 라고도 불리는데, 그만큼 정렬기술이 노광장비에서는 중요하다. 반도체 및 TFT LCD 는 여러 충의 회로를 쌓아감으로써 층과 층간의 전기적 작용으로 생성되는 Tr.(Transistor) 또는 Diode 등의 수동소자를 집적하는 기술로 제조되는 것으로, 층과 층간의 전기적 작용이 설계한 바와 같이 이루어지기 위해선, 층과 층 사이의 정렬이 정확히 이루어져야 한다.(중략)

• Journal of Welding and Joining
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• 제17권3호
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• pp.26-35
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• 1999

On the laser weld production line, a slight alteration of the welding condition changes the bead size and the strength of the weldment. The measurement system is produced by using three photo-diodes for detection of the plasma and spatter signal in $CO_2$ laser welding. The relationship between the sensor signals of plasma or spatter and the bead shape, and the mechanism of the plasma and spatter were analyzed for the bead size estimation. The penetration depth and the bead width were estimated using the multiple regression analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.55-56
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• 2008

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in the case of illumination from various lightsources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from spectral analysis of light sources.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.844-847
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• 2008

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in case of illumination from various light sources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight. The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from the spectral characteristics of light sources.