• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.204-206
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• 2009

Luminescent films were prepared by infiltration of tris(dibenzoylmethane) mono(1, 10-phenanthroline) europium incorporated ormosil into colloidal $SiO_2$ photonic crystal templates. The PL intensity of the infiltrated film into the template was about 13 times higher than that of the plane film prepared without the template.

• Journal of the Korean Society of Radiology
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• v.4 no.4
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• pp.25-28
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• 2010

In this paper, the fabrication and feasibility study of clinical application with euripium doped gadollium oxide ($Gd_2O_3$:Eu) nano phosphor derived by low-temperature solution combustion method. From the fabricated phosphor, the photoluminescent characteristic and linearity as a function of phosphor film thickness were investigated to evaluate x-ray converstion properties. From the experimental results, the luminescent intensity was $2945pC/cm^2$-mR at $270{\mu}m$ $Gd_2O_3$:Eu film and this value is higher 1.2 time the conventional bulk phosphor, which is possible to imaging acquisition. And good linearity was shown at x-ray exposure range for clinical diagnostic application.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.5
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• pp.212-217
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• 2021

The applicability of the white LED from the blue LED of the coating film as a binder for surface and curved coatings were confirmed. The particle size of YAG is D₅₀: 9~10 ㎛, and the crystal structure is garnet (Y₃Al₅O₁₂), cubic. The coating film had no cracks, at the same time, the silica sol was uniformly coated with YAG phosphor, and the YAG content and thickness in the coating film showed a tendency to increase up to 40 ㎛ in proportion to the increase in the amount added. Furthermore, as the YAG content increased, the PL emission intensity increased and the color coordinate shift toward the end of the chromatic locus curve was confirmed.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.371-377
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• 2002

$Y_2O_3:Eu^{3+}$ and Li-doped $Y_2O_3:Eu^{3+}$ thin films have been grown on sapphire substrates using a pulsed laser deposition technique. The thin film phosphors were deposited at a substrate temperature of $600^{\circ}C$ under the oxygen pressure of 100, 200 and 300 mTorr. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity and photoluminescence (PL) of the films are highly dependent on the oxygen pressure. The PL brightness data obtained from $Y_2O_3:Eu^{3+}$ films grown under optimized conditions have indicated that sapphire is one of the most promising substrate for the growth of high quality $Y_2O_3:Eu^{3+}$ thin film red phosphor. In particular, the incorporation of $Li^{+}$ ions into $Y_2O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped $Y_{1.84}Li_{0.08}Eu_{0.08}O_3(Y_2O_3LiEu)$, whose brightness was increased by a factor of 2.7 in comparison with that of $Y_2O_3:Eu^{3+}$ films. This phosphor may promise for application to the flat panel displays.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.126-129
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• 2006

AC-plasma display panels were examined before and after the aging process to analyze the effect of the aging process. The gas analysis was done to detect the impurity gases out of the MgO film and phosphor by a residual gas analyzer. There were no differences found in the components. The MgO film was analyzed to find out the effect of an ion bombardment due to discharge. The surface roughness of the MgO film was different from regional groups due to the different degree of ion bombardments. XPS analysis showed that the 8 hour aging process was not sufficient to remove $Mg(OH)_2$ and $MgCO_3$ existed on the MgO surface. Photoluminescence measurement showed the small deterioration of blue and green phosphor.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.11-15
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• 2011

In this study, $ZnGa_2O_4$ phosphors in its application to field emission displays and electroluminescence were synthesized through the precipitation method and $Mn^{2+}$ ions. A green luminescence activator, $Cr^{3+}$ ions, and a red luminescence activator were separately doped into $ZnGa_2O_4$, which was then screen printed to an indium tin oxide substrate. The thick films of the $ZnGa_2O_4$ were deposited with the various thicknesses using nano-sized powder. The best luminescence characteristics were shown at a thickness of 60 ${\mu}m$. Additionally, green-emission $ZnGa_2O_4:Mn^{2+}$ and red-emission $ZnGa_2O_4:Cr^{3+}$ phosphor thick films, which have superior characteristics, were manufactured through the screen-printing method. These results indicate that $ZnGa_2O_4$ phosphors prepared through the precipitation method have wide application as phosphor of the full color emission.

• Journal of the Korean Graphic Arts Communication Society
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• v.29 no.1
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• pp.23-33
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• 2011

This experimental focus to characterize luminescence properties related to CNT (Carbon Nano Tube) element dispersedly implanted in ZnS-based phosphor thin film panel fabricated by a screen printing method. More specifically FE-SEM measurements, L-V(Luminescence vs. Voltage) and photo luminescence were carried out to determine an optimum value of CNT concentration and film thickness for the thin film structure of CNT-ZnS:(Cu, Al) by the screen printing method. We confirmed that an optimum value of CNT concentration in the ZnS:(Cu, Al) film panel is about 0.75 wt% resulting that the electric conductivity is 1.6 times higher than that of pure CNT sample and showing that the luminescence intensity is increasing until the optimum concentration. Clearly, CNT is presenting in the luminescence process providing a pathway for the creation of hot electron and a channel for the electron-hole recombination but overly inserted CNT may hinder to produce the hot electron for making an avalanching process. In case of the overly doped CNT 1.0 wt% in the ZnS-based phosphor, the luminescence intensity is decreasing although the electric conductivity is exponentially increasing. Based on these results, we realized that hot electron occurred by the external electric field or exciton arose by the external photon source are reduced dramatically over the critical value of CNT concentration because CNT element provide various isolated residues in the composites of ZnS based phosphor rather than pathway or channel for the D-A(Donnor to Acceptor) pair transition or the radiative recombination of electron-hole.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1732-1734
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• 1999

In order to study the fabricating condition of phosphor layers of thin film EL devices, some discharge characteristics with several targets in the parallel-plate magnetron sputtering system will be studied. Plasma parameters, such as electron density and temperature, are also studied since they may be considered as one of the very important factors of fabricating condition of thin film EL device.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.27-32
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• 2006

The present status and prospects for further development of thin-film electroluminescent (TFEL) devices using oxide phosphors are described. High-luminance oxide TFEL devices have been recently developed using a new combinatorial deposition technique featuring rf magnetron sputtering with a subdivided powder target. In addition, new flexible oxide TFEL devices have been fabricated on an oxide ceramic sheet and operated stably in air above $200^{\circ}C$.

• Korean Journal of Materials Research
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• v.26 no.10
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• pp.577-582
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• 2016

$Dy^{3+}$ and $Eu^{3+}$-codoped $SrWO_4$ phosphor thin films were deposited on sapphire substrates by radio frequency magnetron sputtering by changing the growth and thermal annealing temperatures. The results show that the structural and optical properties of the phosphor thin films depended on the growth and thermal annealing temperatures. All the phosphor thin films, irrespective of the growth or the thermal annealing temperatures, exhibited tetragonal structures with a dominant (112) diffraction peak. The thin films deposited at a growth temperature of $100^{\circ}C$ and a thermal annealing temperature of $650^{\circ}C$ showed average transmittances of 87.5% and 88.4% in the wavelength range of 500-1100 nm and band gap energy values of 4.00 and 4.20 eV, respectively. The excitation spectra of the phosphor thin films showed a broad charge transfer band that peaked at 234 nm, which is in the range of 200-270 nm. The emission spectra under ultraviolet excitation at 234 nm showed an intense emission peak at 572 nm and several weaker bands at 479, 612, 660, and 758 nm. These results suggest that the $SrWO_4$: $Dy^{3+}$, $Eu^{3+}$ thin films can be used as white light emitting materials suitable for applications in display and solid-state lighting.