• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.102-105
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• 2004

With varying rapid thermal annealing (RTA) temperature, luminescent properties of ZnMgS:Mn thin film sputter-deposited with one target were measured. Although all samples have the same composition, $Zn_{1-x}Mg_xS:Mn$ (x=0.25) can emit luminescence between 580 and 614 nm, which is controlled by only RTA temperature. It is understood that the energy band gap shift of ZnMgS:Mn thin film phosphor occurs with varying RTA temperature.

• 반도체디스플레이기술학회지
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• 제21권4호
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• pp.106-109
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• 2022

The green-emitting Zn₂SiO₄:Mn²⁺ phosphor film was evaluated in a xenon excimer lamp. The phosphor film with 2 ㎛ thick was formed of monolithic structure on the inner side of quartz through a long-time annealing process of coated ZnO solution doped with Mn²⁺ ion and SiO₂ of quartz tube. The coated quartz was filled with 100 torr of xenon gas, and simultaneously both sides was melt and sealed. The xenon-field quartz tube was discharge by applying the voltage of 15 kV with a frequency of 26 kHz, and emitted the glow with dominant peak at 172 nm. The vacuum ultraviolet excited the inner-side coated Zn₂SiO₄:Mn²⁺ phosphor film, which emitted the pure and strong green light.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.387-392
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• 2019

$Dy^{3+}$ and $Eu^{3+}$-co-doped $La_2MoO_6$ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the $La_2MoO_6$ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of $100^{\circ}C$ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the $^5D_0{\rightarrow}^7F_2$ and $^5D_0{\rightarrow}^7F_4$ transitions of the $Eu^{3+}$ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of the $Dy^{3+}$ ions. The results suggest that $La_2MoO_6$ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1300-1302
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• 2009

Transparent $Zn_2SiO_4:Mn^{2+}$ film has been synthesized by spray pyrolysis with various spraying conditions. It illuminates an efficient green emission with the relative emission intensity about 45% under 147nm excitation of a commercial powder phosphor. Additionally, the zinc precursors and additives play a key factor both controlling luminous efficiency and transparency.

• Bulletin of the Korean Chemical Society
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• 제22권8호
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• pp.921-924
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• 2001

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1091-1094
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• 2004

High-luminous efficiency full-color emissions in photoluminescence (PL) were obtained in $GdVO_4$ phosphor thin films co-doped with various amounts of Eu, Er and/or Tm and postannealed at approximately 1000$^{\circ}C$. The $GdVO_4$:Eu,Er,Tm phosphor thin films were deposited on thick $BaTiO_3$ ceramic sheets by r.f. magnetron sputtering using powder targets and postannealed in an air atmosphere. The rare earth (RE) content (RE/(Gd+V+RE) atomic ratio) in the oxide phosphor thin films was varied in the range from 0.1 to 2 at.%. It was found that the excitation of $GdVO_4$:Eu.Er,Tm thin films is attributed to band-to-band transition. A white PL emission was obtained in a $GdVO_4$:Eu,Er,Tm thin film with Eu, Er and Tm contents of 0.2, 0.7 and 1 at.%, respectively: CIE chromaticity color coordinates. (X=0.352 and Y=0.351). In addition, a white emission was obtained in a thin-film electroluminescent (TFEL) device made with this thin film.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.243-252
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• 2002

We propose a new concept: that of photonic crystal phosphors (PCPs) for display and phosphor related applications. It is well known that microcavities with dimensions comparable to the emitting wavelength strongly enhance light-matter interactions, resulting in a significant increase in spontaneous emission rate, which can be directly translated into enhancement in phosphor efficiency. In recent simulations we have demonstrated that when a microcavity is formed in a nano-phosphor structure, the luminescence band is modified, and can be made spectrally sharp and tunable by engineering the geometry/material properties of the cavity and the surrounding photonic crystal lattice. New phosphor material structures based on photonic crystals are proposed. Applications to thin film EL phosphors and particle phosphors are discussed. Additionally, economic methods of synthesizing and incorporating PCPs into current display applications are proposed.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.593-594
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• 2006

A novel thermal transfer method was developed to form the phosphor screen for VPT(Video Phone Tube). This method have advantages of simple process, clean environment, saving raw material and running-cost comparison of electrodeposition, spin coating of conventional methods. But now applying phosphor screen for thermal transfer method has been formed three layers (phosphor layer, ITO layer and thermal adhesive layer) on the PET film as substrate. This is complex process, run to waste of raw-material and require of high cost. Also ITO paste at present has been imported from Japan. To improve these problems, we have manufactured phosphor screen formed by two layers (phosphor layer and ITO layer). We have developed ITO paste that had both conductive and excellent thermal transfer abilities, made it of domestic raw-material.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.31.1-31.1
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• 2009

Carbon nanotubes (CNTs) are attractive material because of their superior electrical, mechanical, and chemical properties. Furthermore, their geometric features such as a large aspect ratio and a small radius of curvature at tip make them ideal for low-voltage field emission devices including backlight units of liquid crystal display, lighting lamps, X-ray source, microwave amplifiers, electron microscopes, etc. In field emission devices for display applications, the phosphor anode is positioned against the CNT emitters. In most case, light generated from the phosphor by electron bombardment passes through the anode front plate to reach observers. However, light is produced in a narrow depth of the surface of the phosphor layer because phosphor particles are big as much as several micrometers, which means that it is necessary to transmit through the phosphor layer. Hence, a drop of light intensity is unavoidable during this process. In this study, we fabricated a transparent cathode back plate by depositing an ultra-thin film of single walled CNTs (SWCNTs) on an indium tin oxide (ITO)-coated glass substrate. Two types of phosphor anode plates were employed to our transparent cathode back plate: One is an ITO glass substrate with a phosphor layer and the other is a Cr-coated glass substrate with phosphor layer. For the former case, light was radiated from both the front and the back sides, where luminance on the back was ~30% higher than that on the front in our experiments. For the other case, however, light was emitted only from the cathode back side as the Cr layer on the anode glass rolled as a reflecting mirror, improving the light luminance as much as ~60% compared with that on the front of one. This study seems to be discussed about the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the cathode back side. The experimental procedures are as follows. First, a CNT aqueous solution was prepared by ultrasonically dispersing purified SWCNTs in deionized water with sodium dodecyl sulfate (SDS). A milliliter or even several tens of micro-liters of CNT solution was deposited onto a porous alumina membrane through vacuum filtration. Thereafter, the alumina membrane was solvated with the 3 M NaOH solution and the floating CNT film was easily transferred to an ITO glass substrate. It is required for CNT film to make standing CNTs up to serve as electron emitter through an adhesive roller activation.

• 한국표면공학회지
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• 제49권1호
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• pp.81-86
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• 2016

$Eu^{3+}$-doped $MgMoO_4$ phosphor thin films were deposited on quartz substrates by radio frequency magnetron sputtering with changing various growth temperatures. The effects of growth temperature on the structure, transmittance, optical band gap, and luminescence of the phosphor thin films were characterized. All the phosphor thin films, irrespective of growth temperature, showed a monoclinic structure with a main (220) diffraction peak. The thin film deposited at a growth temperature of $400^{\circ}C$ indicated an average transmittance of 90% in the wavelength range of 500 ~ 1100 nm and band gap energy of 4.81 eV. The excitation spectra of the phosphor thin films consisted of a broad charge transfer band peaked at 284 nm in the range of 230 ~ 330 nm and two weak peaks located at 368 and 461 nm, respectively. The emission spectra under ultraviolet excitation at 284 nm exhibited a sharp emission peak at 614 nm and several weak bands. All the phosphor thin films showed high asymmetry ratio values, indicating that $Eu^{3+}$ ions incorporated into the host lattice occupied at the non-inversion symmetry sites. The results suggest that the growth temperature plays an important role in growing high-quality phosphor thin films.