• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.62-63
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• 2003

Electron-phonon interaction plays a significant role in forming of colossal magnetoresistance effect (CMR). Polaron formation was observed by neutron diffraction and by extended X-ray absorption fine structure (EXAFS) analysis. Local probe as given by the EXAFS is a useful method to study the polaronic charge and its dependence on temperature and ions size. Here we present the EXAFS study of polaronic charge in $La_{0.7}Ca_{0.3-x}Ba_{x}MnO_3$ compositions.

• 전자공학회논문지D
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• 제34D권7호
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• pp.45-55
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• 1997

Electircal characteristics of HgCdTe photodiodes with a heterostructure to achieve high performance are analyzed numerically. A two-dimensional device simulator which can handle a HgCdTe heterostructure, was developed for this work. The effects of band nonparabolicity, carrier degeneracy, and band-offset of heterointerace are included in a carrier transport model. A unified generation-recombination model includes simultaneously phonon-assisted tunneling and pure tunneling of carriers via traps is newly employed for describing the electric field and temperature dependency of dark current effectively. Furthermore, to accurately predict the effect mole fraction variations on genration rates, ray-trace algorithm is incorporated in the our simulator. Under the various circumstances such as dark, illumination, and surface states, electrical properties of planar heterostructure photodiode are presented and those of homojunction are compared. These results serve as a explanation of cap layer's role on performance.

• 한국자기학회지
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• 제16권1호
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• pp.71-74
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• 2006

나노구조 초전도 박막의 모폴로지를 열처리를 통해 변화시키며 이에 따른 박막의 초전도 특성을 면저항과 터널링 측정을 통해 연구하였다. 면저항 측정결과 초전도 박막의 임계온도가 열처리 온도에 따라 증가함을 알 수 있었다. 터널링 측정방법을 통해 포논 스펙트럼을 분석한 결과 열처리 후 횡 포논 모드에 변화가 나타남을 알 수 있었다. 이러한 결과들을 통해 나노구조 박막의 모폴로지가 박막의 초전도 특성에 미치는 영향을 이해할 수 있다.

• 한국세라믹학회지
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• 제36권8호
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• pp.843-847
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• 1999

The dc resistivity dc magnetization and thermopower of layered perovskite La1.6Ca1.4Mn2O7.07 have been studied. The ceramic sample of La1.6Ca1.4Mn2O7.07 undergoes the metal-insulator transition at 120K while a first-order phase transition from a ferromagnetic phase to a paramagnetic phae is observed at 260 K=TC This behavior is quite different from that of the well-known double exchange ferromagnets such as La1-xCaxMnO3 This phenomenon could be understood by considering the effects of the anisotropic double exchange interaction caused by two dimensional Mn-O-Mn networks in this materials. The dc magnetization between 120K and 250K is nearly constant and decreases rapidly with increasing temperature above 250K The measurements of dc resistivity and thermopower indicate that Zener polaron hopping conduction takes place above 260 K.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.238-239
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• 2012

ZnO disk는 Ar 가스의 ON/OFF 사이클을 사용한 기상 이동법으로 성장하였다. 온도 의존성 photoluminescence (PL)은 PL 스펙트럼의 quenching 동작을 관장하는 메커니즘을 연구하기 위해 조사하였다. ZnO disk의 12 K PL 스펙트럼에서 3.364, 3.315, 3.244, 3.212, 3.170, 3.139, 3.100 eV의 피크를 관측되었고, 그것은 각각 excitons bound to neutral donors ($D^{\circ}X$), A-line, first-order longitudinal optical (1LO) phonon replica of A-line (A-1LO), donor-to acceptor pair (DAP), A-2LO, DAP-1LO, A-3LO 이다. $D^{\circ}X$와 A-line 피크는 Varshni 공식에 의해서 피팅을 하였고, 도너 이온화 에너지는 40 meV 이었다. Free excitons, $D^{\circ}X$, A-line의 lifetime은 이론적으로 계산하였고, 온도가 증가함에 따라 lifetime이 증가하였다.

• 한국분말재료학회지
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• 제30권2호
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• pp.123-129
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• 2023

High-temperature and high-pressure post-processing applied to sintered thermoelectric materials can create nanoscale defects, thereby enhancing their thermoelectric performance. Here, we investigate the effect of hot isostatic pressing (HIP) as a post-processing treatment on the thermoelectric properties of p-type Bi_0.5Sb_1.5Te_3.0 compounds sintered via spark plasma sintering. The sample post-processed via HIP maintains its electronic transport properties despite the reduced microstructural texturing. Moreover, lattice thermal conductivity is significantly reduced owing to activated phonon scattering, which can be attributed to the nanoscale defects created during HIP, resulting in an ~18% increase in peak zT value, which reaches ~1.43 at 100℃. This study validates that HIP enhances the thermoelectric performance by controlling the thermal transport without having any detrimental effects on the electronic transport properties of thermoelectric materials.

• Composites Research
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• 제28권2호
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• pp.70-74
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• 2015

본 논문에서는 탄소나노튜브(CNT)와 마이크로 글래스 버블(GB)을 포함한 폴리아마이드 6(PA6) 복합재의 열전 특성을 다뤘다. 복합재에 포함된 GB은 복합재 내에서 큰 공간을 차지하게 되는데, 이때 CNT는 GB가 없는 공간으로 밀려나면서 고밀도로 격리된(segregated) 네트워크를 형성한다. CNT의 분산을 위해, 소니케이션(Sonicatoin)으로 CNT를 분산시킨 PA6, 포름산 용액을 증류수를 이용하여 응고시킨 후 압축성형하여 복합재 판을 제조하였다. 복합재 판의 열전성능을 평가하기 위해서 열전도도, 전기전도도, 제벡계수(Seebeck coefficient) 등을 측정하였고, 최고 0.016의 성능지수를 얻었다.

• 한국재료학회지
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• 제16권10호
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• pp.647-651
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• 2006

A new class of compounds in the form of skutterudite structure, Fe doped $CoSb_3$ with a nominal composition of $Fe_xCo_{4-x}Sb_{12}$ ($0{\leq}x{\leq}2.5$), were synthesized by mechanical alloying of elemental powders followed by vacuum hot pressing. Nanostructured, single-phase skutterudites were successfully produced by vacuum hot pressing using as-milled powders without subsequent heat-treatments for the compositions of $x{\leq}1.5$. However, second phase was found to form in case of $x{\geq}2$, suggesting the solubility limit of Fe with Co in this system. Thermoelectric properties including thermal conductivity from 300 to 600 K were measured and discussed. Lattice thermal conductivity was greatly reduced by introducing a dopant up to x=1.5 as well as by increasing phonon scattering in nanostructured skutterudite, leading to enhancement in the thermoelectric figure of merit. The maximum figure of merit was found to be 0.32 at 600 K in the composition of $Fe_xCo_{4-x}Sb_{12}$.

• 대한금속재료학회지
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• 제49권10호
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• pp.818-822
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• 2011

ZnO nanorods were grown on Au-coated Si substrates by vapor phase transport (VPT) at the growth temperature of $600^{\circ}C$ using a mixture of zinc oxide and graphite powders as source material. Au thin films with the thickness of 5 nm were deposited by ion sputtering. Temperature-dependent photoluminescence (PL) was carried out to investigate the optical properties of the ZnO nanorods. Five peaks at 3.363, 3.327, 3.296, 3.228, and 3.143 eV, corresponding to the free exciton (FX), neutral donor bound exciton ($D^{\circ}X$), first order longitudinal optical phonon replica of free exciton (FX-1LO), FX-2LO, and FX-3LO emissions, were obtained at low-temperature (10 K). The intensity of these peaks decreased and their position was red shifted with the increase in the temperature. The FX emission peak energy of the ZnO nanorods exhibited an anomalous behavior (red-blue-red shift) with the increase in temperature. This is also known as an "S-shaped" emission shift. The thermal activation energy for the exciton with increasing temperature in the ZnO nanorods is found to be about 26.6 meV; the values of Varshni's empirical equation fitting parameters are = $5{\times}10^{-4}eV/K$, ${\beta}=350K$, and $E_g(0)=3.364eV$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.362.1-362.1
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• 2016

InAs nanowires were synthesized by a vapor-liquid-solid method with InAs powder. The composition and crystalline structure of nanowires were confirmed by energy-dispersive spectroscopy (EDS) and high resolution transmission electron microscopy (HRTEM), respectively. The thermal conduction of nanowires was investigated by the optical method using Raman spectroscopy: i.e., the local temperature on nanowire was determined by laser heating. As temperature increased, the Raman peaks are shifted to low frequency and broadened. The temperature dependent Raman scattering experiments was realized on InAs nanowires with different percentages of zinc-blende and wurtzite structure. The temperature dependence on the nanowire structure has been successfully obtained: the phonon scattering was more increased in InAs heretostructure nanowires, compared to the InAs nanowires with homostructure. The result strongly suggests that the thermal conduction can be effectively controlled by ordered interface without any decrease in electrical conduction.