• 제목/요약/키워드: Phonon transport

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Monte Carlo Simulation of Phonon Transport in One-Dimensional Transient Conduction and ESD Event (1 차원 과도 전도와 정전기 방전 현상에 관한 포논 전달의 몬테 카를로 모사)

  • Oh, Jang-Hyun;Lee, Joon-Sik
    • Proceedings of the KSME Conference
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    • 2007.05b
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    • pp.2165-2170
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    • 2007
  • At nanoscales, the Boltzmann transport equation (BTE) can best describe the behavior of phonons which are energy carriers in crystalline materials. Through this study, the phonon transport in some micro/nanoscale problems was simulated with the Monte Carlo method which is a kind of the stochastic approach to the BTE. In the Monte Carlo method, the superparticles of which the number is the weighted value to the actual number of phonons are allowed to drift and be scattered by other ones based on the scattering probability. Accounting for the phonon dispersion relation and polarizations, we have confirmed the one-dimensional transient phonon transport in ballistic and diffusion limits, respectively. The thermal conductivity for GaAs was also calculated from the kinetic theory by using the proposed model. Besides, we simulated the electrostatic discharge event in the NMOS transistor as a two-dimensional problem by applying the Monte Carlo method.

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A Numerical Study on the Anisotropic Thermal Conduction by Phonon Mean Free Path Spectrum of Silicon in Silicon-on-Insulator Transistor (실리콘 박막 트랜지스터 내 포논 평균자유행로 스펙트럼 비등방성 열전도 특성에 대한 수치적 연구)

  • Kang, Hyung-sun;Koh, Young Ha;Jin, Jae Sik
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.40 no.2
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    • pp.111-117
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    • 2016
  • The primary concern of this research is to examine the phonon mean free path (MFP) spectrum contribution to heat conduction. The size effect of materials is determined by phonon MFP, and the size effect appears when the phonon MFP is similar to or less than the characteristic length of materials. Therefore, knowledge of the phonon MFP is essential to increase or decrease the heat conduction of a material for engineering applications, such as micro/nanosystems. In this study, frequency dependence of the phonon transport is considered using the Boltzmann transport equation based on a full phonon dispersion model. Additionally, the phonon MFP spectrums of in-plane and out-of-plane heat transport are investigated by varying the film thickness of the silicon layer from 41 nm to 177 nm. This will increase the understanding of anisotropic heat conduction in a SOI (Silicon-on-Insulator) transistor.

First-principles Calculations of the Phonon Transport in Carbon Atomic Chains Based on Atomistic Green's Function Formalism

  • Kim, Hu Sung;Park, Min Kyu;Kim, Yong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.425.1-425.1
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    • 2014
  • Thermal transport in nanomaterials is not only scientifically interesting but also technological important for various future electronic, bio, and energy device applications. Among the various computation approaches to investigate lattice thermal transport phenomena in nanoscale, the atomistic nonequilibrium Green's function approach based on first-principles density functional theory calculations appeared as a promising method given the continued miniaturization of devices and the difficulty of developing classical force constants for novel nanoscale interfaces. Among the nanometerials, carbon atomic chains, namely the cumulene (all-doulble bonds, ${\cdots}C=C=C=C{\cdots}$) and polyyne (alternation of single and triple bonds, ${\cdots}C{\equiv}C-C{\equiv}C{\cdots}$) can be considered as the extream cases of interconnction materials for nanodevices. After the discovery and realization of carbon atomic chains, their electronic transport properties have been widely studied. For the thermal transport properties, however, there have been few literatures for this simple linear chain system. In this work, we first report on the development of a non-equilibrium Green's function theory-based computational tool for atomistic thermal transport calculations of nanojunctions. Using the developed tool, we investigated phonon dispersion and transmission properties of polyethylene (${\cdots}CH2-CH2-CH2-CH2{\cdots}$) and polyene (${\cdots}CH-CH-CH-CH{\cdots}$) structures as well as the cumulene and polyyne. The resulting phonon dispersion from polyethylene and polyene showed agreement with previous results. Compared to the cumulene, the gap was found near the ${\Gamma}$ point of the phonon dispersion of polyyne as the prediction of Peierls distortion, and this feature was reflected in the phonon transmission of polyyne. We also investigated the range of interatomic force interactions with increase in the size of the simulation system to check the convergence criteria. Compared to polyethylene and polyene, polyyne and cumulene showed spatially long-ranged force interactions. This is reflected on the differences in phonon transport caused by the delicate differences in electronic structure.

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Transport properties of carbide superconductor La2C3

  • Kim, J.S.;Kremer, R.K.
    • Progress in Superconductivity and Cryogenics
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    • v.15 no.1
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    • pp.6-10
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    • 2013
  • We investigate the electrical and thermal transport properties of a sesquicarbide superconductor $La_2C_3$, including electrical resistivity, thermoelectric power, and thermal conductivity. The electrical resistivity exhibits a typical metallic character with a saturation behavior at high temperatures. The thermoelectric power shows a metallic behavior with pronounced phonon-drag effect, comparable with pure metals. The broad peak of the thermal conductivity is observed in the superconducting state, which is rapidly suppressed by magnetic fields. These observations suggest that the electron-phonon scattering is significant in $La_2C_3$, which is relevant with the relatively high-$T_c$ in $La_2C_3$ through strong electron-phonon coupling with low frequency phonon modes.

Transient heat transfer in thin films (초박막에서의 비정상 열전달)

  • Bai, C.H.;Chung, M.
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.22 no.1
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    • pp.1-11
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    • 1998
  • For the analysis of phonon heat transfer within short time and spatial scales, conventional macroscopic heat conduction equations with jump boundary conditions are tried and the results are compared to those of equation of phonon radiative transport(EPRT), which is one of microscopic transport equation. In transient state the macroscopic temperatures show far different behavior from EPRT. In steady state the hyperbolic temperatures with temperature jump at the wall from time relaxation model agrees well with EPRT temperatures. Since EPRT is also an approximate form of microscopic transport equation and there are no experimental results to verify the proposed model in this study, we can not conclude whether the approaching method from this study is valid or not. To the authors' knowledge, there are no experimental results available which can be used to test the validity of these models. Such an experiment, while difficult to conduct, would be invaluable.

Prediction of Spectral Phonon Mean Free Path Contribution to Thermal Conduction in Silicon Using Phonon Kinetic Theory (포논 기체 운동론을 이용한 실리콘 내 포논 평균자유행로 스펙트럼 열전도율 기여도 예측)

  • Jin, Jae Sik
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.41 no.5
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    • pp.341-346
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    • 2017
  • Knowing the mean free paths (MFPs) of thermal phonons is an essential step in performing heat transfer analysis for nanomaterials, and in determining the optimum design for tailoring the heat transfer characteristics of nanomaterials. In this study, we present a method that can be used to calculate accurately the phonon MFP spectra of nanostructures based on simple phonon kinetic theory. Here, the kinetic theory may be employed by extracting only the diffusive-transport part of the phonon spectrum (i.e., the MFPs are less than a thermal length). By considering phonon dispersion and polarization effects, the phonon MFP distributions of silicon at room temperature are calculated from phonon transport properties and the spectral MFP. Our results are validated by comparison with those of the first principle and MFP spectroscopy data.

A Study on the Effects of Hot Phonon in Electron Transport at Millimeter-wave Frequencies (밀리미터 주파수에서 전자의 운동에 대한 Hot Phonon의 영향 연구)

  • 윤태섭
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.12
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    • pp.1070-1078
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    • 1998
  • A density of phonon is increased by application of electric field. At this time the phonon which has higher energy than around is called hot phonon is disappeared after 7 picosecond by scattering with electron and loss energy. Since the lifetime of phonon is very short, the effects of hot phonon can be neglected in the low speed semiconductor device, but it must be considered in high speed devices. DC and AC electric fields are applied to bulk GaAs, and the density of phonon is obtained and analyzed for its effects on electron velocity and electron distribution using Monte Carlo simulation method. Under high electric filed the density of hot phonon increased and energy of hot phonon is decreased by scattering with electron on the other hand the energy of electron is increased. Therefore electron move from central valley of conduntion band to satellite vallies and the valocity of electron decrease since the mass of electron in satellite vally is heavier than central vally. In millimeter wave frequencies, the effects of hot phonon increased at higher frequencies.

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Quantum Transition Properties of Quasi-Two Dimensional Si System in Electron Deformation Potential Phonon Interacting (전자 포텐셜 변형과 포논 상호작용에 의한 준 이차원 Si 구조의 전도 현상 해석)

  • Lee, Su-Ho;Kim, Young-Mun;Kim, Hai-Jai;Joo, Seok-Min
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.66 no.3
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    • pp.129-134
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    • 2017
  • We investigated theoretically the quantum optical transition properties of Si, in quasi 2-Dimensinal Landau splitting system, based on quantum transport theory. We apply the quantum transport theory (QTR) to the system in the confinement of electrons by square well confinement potential under linearly polarized oscillating field. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on four transition processes, namely, the intra-leval transition process, the inter-leval transition process, the phonon emission transition process and the phonon absorption transition process.

A Numerical Study on Phonon Spectral Contributions to Thermal Conduction in Silicon-on-Insulator Transistor Using Electron-Phonon Interaction Model (전자-포논 상호작용 모델을 이용한 실리콘 박막 소자의 포논 평균자유행로 스펙트럼 열전도 기여도 수치적 연구)

  • Kang, Hyung-sun;Koh, Young Ha;Jin, Jae Sik
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.41 no.6
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    • pp.409-414
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    • 2017
  • The aim of this study is to understand the phonon transfer characteristics of a silicon thin film transistor. For this purpose, the Joule heating mechanism was considered through the electron-phonon interaction model whose validation has been done. The phonon transport characteristics were investigated in terms of phonon mean free path for the variations in the device power and silicon layer thickness from 41 nm to 177 nm. The results may be used for developing the thermal design strategy for achieving reliability and efficiency of the silicon-on-insulator (SOI) transistor, further, they will increase the understanding of heat conduction in SOI systems, which are very important in the semiconductor industry and the nano-fabrication technology.

Thermal transport in thorium dioxide

  • Park, Jungkyu;Farfan, Eduardo B.;Enriquez, Christian
    • Nuclear Engineering and Technology
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    • v.50 no.5
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    • pp.731-737
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    • 2018
  • In this research paper, the thermal transport in thorium dioxide is investigated by using nonequilibrium molecular dynamics. The thermal conductivity of bulk thorium dioxide was measured to be 20.8 W/m-K, confirming reported values, and the phonon mean free path was estimated to be between 7 and 8.5 nm at 300 K. It was observed that the thermal conductivity of thorium dioxide shows a strong dependency on temperature; the highest thermal conductivity was estimated to be 77.3 W/m-K at 100 K, and the lowest thermal conductivity was estimated to be 4.3 W/m-K at 1200 K. In addition, by simulating thorium dioxide structures with different lengths at different temperatures, it was identified that short wavelength phonons dominate thermal transport in thorium dioxide at high temperatures, resulting in decreased intrinsic phonon mean free paths and minimal effect of boundary scattering while long wavelength phonons dominate the thermal transport in thorium dioxide at low temperatures.