• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.40 no.9
• /
• pp.621-627
• /
• 2016

In this study, we present a model that can be used to calculate the phonon-surface scattering rate directly from the experimental data on phonon mean free path (MFP) spectra of nanostructures. Using this model and the recently reported length-dependent thermal conductivity measurements on $Si_{0.9}Ge_{0.1}$ nanowires (NWs), we investigate the spectral reduced MFP distribution and the spectral phonon-surface scattering rate in the $Si_{0.9}Ge_{0.1}$ NWs. From the results, it is found that the phonon transport properties with the material and the phonon frequency dependency of the spectral phonon-surface scattering rate per unit length of the NW. The model presented in this study can be used for developing heat transfer analysis models of nanomaterials, and for determining the optimum design for tailoring the heat transfer characteristics of nanomaterials for future applications of phonon nanoengineering.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.40 no.2
• /
• pp.111-117
• /
• 2016

The primary concern of this research is to examine the phonon mean free path (MFP) spectrum contribution to heat conduction. The size effect of materials is determined by phonon MFP, and the size effect appears when the phonon MFP is similar to or less than the characteristic length of materials. Therefore, knowledge of the phonon MFP is essential to increase or decrease the heat conduction of a material for engineering applications, such as micro/nanosystems. In this study, frequency dependence of the phonon transport is considered using the Boltzmann transport equation based on a full phonon dispersion model. Additionally, the phonon MFP spectrums of in-plane and out-of-plane heat transport are investigated by varying the film thickness of the silicon layer from 41 nm to 177 nm. This will increase the understanding of anisotropic heat conduction in a SOI (Silicon-on-Insulator) transistor.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.41 no.5
• /
• pp.341-346
• /
• 2017

Knowing the mean free paths (MFPs) of thermal phonons is an essential step in performing heat transfer analysis for nanomaterials, and in determining the optimum design for tailoring the heat transfer characteristics of nanomaterials. In this study, we present a method that can be used to calculate accurately the phonon MFP spectra of nanostructures based on simple phonon kinetic theory. Here, the kinetic theory may be employed by extracting only the diffusive-transport part of the phonon spectrum (i.e., the MFPs are less than a thermal length). By considering phonon dispersion and polarization effects, the phonon MFP distributions of silicon at room temperature are calculated from phonon transport properties and the spectral MFP. Our results are validated by comparison with those of the first principle and MFP spectroscopy data.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.41 no.6
• /
• pp.409-414
• /
• 2017

The aim of this study is to understand the phonon transfer characteristics of a silicon thin film transistor. For this purpose, the Joule heating mechanism was considered through the electron-phonon interaction model whose validation has been done. The phonon transport characteristics were investigated in terms of phonon mean free path for the variations in the device power and silicon layer thickness from 41 nm to 177 nm. The results may be used for developing the thermal design strategy for achieving reliability and efficiency of the silicon-on-insulator (SOI) transistor, further, they will increase the understanding of heat conduction in SOI systems, which are very important in the semiconductor industry and the nano-fabrication technology.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.33 no.10
• /
• pp.820-826
• /
• 2009

The anisotropic phonon conductions with varying Joule heating rate of the silicon film in Silicon-on-Insulator devices are examined using the electron-phonon interaction model. It is found that the phonon heat transfer rate at each boundary of Si-layer has a strong dependence on the heating power rate. And the phonon flow decreases when the temperature gradient has a sharp change within extremely short length scales such as phonon mean free path. Thus the heat generated in the hot spot region is removed primarily by heat conduction through Si-layer at the higher Joule heating level and the phonon nonlocality is mainly attributed to lower group velocity phonons as remarkably dissimilar to the case of electrons in laser heated plasmas. To validate these observations the modified phonon nonlocal model considering complete phonon dispersion relations is introduced as a correct form of the conventional theory. We also reveal that the relation between the phonon heat deposition time from the hot spot region and the relaxation time in Si-layer can be used to estimate the intrinsic thermal resistance in the parallel heat flow direction as Joule heating level varies.

• Bulletin of the Korean Chemical Society
• /
• v.9 no.4
• /
• pp.213-217
• /
• 1988

A new paradigm for the viscosity of fluid is presented by considering the fact that the viscosity is equal to the shear stress divided by the shear rate. The shear stress is obtained from the sum of kinetic and internal pressures of fluid, and the shear rate is found from the phonon velocity divided by the mean free path of the phonon. The calculated viscosities for various simple substances are in excellent agreements with those of the observed data through the wide temperature range covered both of liquid and gas phase.

• Nuclear Engineering and Technology
• /
• v.50 no.5
• /
• pp.731-737
• /
• 2018

In this research paper, the thermal transport in thorium dioxide is investigated by using nonequilibrium molecular dynamics. The thermal conductivity of bulk thorium dioxide was measured to be 20.8 W/m-K, confirming reported values, and the phonon mean free path was estimated to be between 7 and 8.5 nm at 300 K. It was observed that the thermal conductivity of thorium dioxide shows a strong dependency on temperature; the highest thermal conductivity was estimated to be 77.3 W/m-K at 100 K, and the lowest thermal conductivity was estimated to be 4.3 W/m-K at 1200 K. In addition, by simulating thorium dioxide structures with different lengths at different temperatures, it was identified that short wavelength phonons dominate thermal transport in thorium dioxide at high temperatures, resulting in decreased intrinsic phonon mean free paths and minimal effect of boundary scattering while long wavelength phonons dominate the thermal transport in thorium dioxide at low temperatures.

• Proceedings of the KSME Conference
• /
• 2004.04a
• /
• pp.1376-1381
• /
• 2004

Understanding the thermal conductivity and heat transfer processes in superlattice structures is critical for the development of thermoelectric materials and optoelectronic devices based on quantum structures. $Chen^{(1)}$ developed ballistic diffusive equation(BDE) for alternatives of the Boltzmann equation that can be applied to the complex geometrical situation. In this study, a simulation code based on BDE is developed and applied to the 1-dimensional transient heat conduction across a thin film and transient 2-dimensional heat conduction across the film with heater. The obtained results are compared to the results of the $Chen^{(1)}$ and Yang and $Chen^{(1)}$. Finally, steady 2-dimensional heat conduction in the quantum dot superlattice are solved to obtain the equivalent thermal conductivity of the lattice and also compared with the experimental data from $Borca-Tasciuc^{(2)}$.

• Journal of the Korean Vacuum Society
• /
• v.22 no.3
• /
• pp.144-149
• /
• 2013

We use Memory function to examine the thermal conductivity as a function of the temperature in single-walled carbon nanotube (SWNT). We determine the Umklapp, normal and SWNT-substrate phonon scattering rate from the computed inverse spin relaxation time. Thermal conductivity increased as the diameter increased when we assumed that the zigzag (10,0) transition was a more dominant phonon scattering than the (9,0) transition.

• Proceedings of the KSME Conference
• /
• 2008.11b
• /
• pp.2214-2219
• /
• 2008

The thermal contact resistance(TCR) of nanosized contact spots has been investigated through a multiscale analysis which considers the resolution of surface topography. A numerical simulation is performed on the finite element model of rough surfaces. Especially, as the contact size decreases below the phonon mean free path, the size dependent thermal conductivity is considered to calculate the TCR. In our earlier model which follows an elastic material, the TCR increases without limits as the number of nanosized contact spots increases in the process of scale variation. However, the elastoplastic contact induces a finite limit of TCR as the scale varies. The results are explained through the plastic behavior of the two contacting models. Furthermore, the effect of air conduction in nanoscale is also investigated.