• Title/Summary/Keyword: Phase-shifter

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Phase shitter design and implementation of DGS using ferroelectric materials (강유전체를 이용한 DGS 구조의 위상 변위기 설계 및 구현)

  • Kim, Young-Ju;Park, Jun-Seok;Kim, Young-Tae;Kim, Sun-Hyeong;Kim, Hyeong-Seok
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.2014-2016
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    • 2004
  • In order to obtain a low-loss ferroelectric phase shifter, the reflection-type phase shifter with ferroelectric defected ground structure (DGS) resonators has been designed in this paper. The proposed phase shifter is consist of a 3-dB $90^{\circ}$ branch-line hybrid coupler and terminated reflective circuit with tunable ferroelectric DGS resonator. The ferroelectric DGS unit structure can provide high Q resonator characteristic at high frequencies. The design parameters of equivalent circuit for the tunable DGS resonator are derived by using simple circuit analysis method and three-dimensional full wave finite element method. The fabricated phase shifter has an insertion loss of better than 3.4dB at 13.5GHz.

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Integrated Photonic RF Phase Shifter Using an Electrooptic Polymer Modulator (전기광학폴리머 변조기틀 이용한 집적광학적 RF 위상변환기)

  • 이상신
    • Korean Journal of Optics and Photonics
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    • v.15 no.3
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    • pp.274-277
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    • 2004
  • An integrated photonic radio frequency (RF) phase shifter has been proposed and fabricated using a nested dual Mach-Zehnder modulator configuration in a new electro-optic polymer. The fabricated device shows a continuous voltage control of the RF signal phase. A near-linear phase shift exceeding 108$^{\circ}$was obtained for a 16-GHz microwave signal by tuning the do control voltage over a 7.8- $V_{pp}$ range.e.

Compact Metamaterial-Based Tunable Phase Shifter at 2.4 GHz

  • Jung, Youn-Kwon;Lee, Bomson
    • Journal of electromagnetic engineering and science
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    • v.13 no.2
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    • pp.137-139
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    • 2013
  • A compact metamaterial (MTM)-based tunable phase shifter consisting of four unit cells with a simple DC bias circuit has been designed at 2.4 GHz. The variable series capacitors and shunt inductors that are required to be loaded periodically onto a host transmission line are realized employing only chip variable capacitors (varactors). In addition, the proposed phase shifter requires only one DC bias source to control the varactors, with the matching condition of the MTM line automatically satisfied. The measured phase shifting range is $285.2^{\circ}$ (from $-74.2^{\circ}$ to $211^{\circ}$). The measured insertion loss is approximately 1.5 dB. The circuit/electromagnetic-simulated and measured results are in good agreement.

Development of a New Active Phase Shifter

  • Kim, S.J.;N.H. Myung
    • Proceedings of the IEEK Conference
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    • 2000.07b
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    • pp.1063-1066
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    • 2000
  • ln this paper, a new active phase shifter is proposed using a vector sum method, and it is shown that the proposed phase shifter is more efficient than the others in size, power, number of circuits, and gain. Also a unique digital phase control method of the circuit is suggested. The proposed scheme was designed and implemented using a Wilkinson power combiner/divider, a branch line 3dB quadrature hybrid coupler and variable gain amplifiers (VGAs) using dual gate FETs (DGFETs). Furthermore, it is also shown that the proposed scheme is more efficient and works properly with the digital phase control method.

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An Optical Graphene-silicon Resonator Phase Shifter Suitable for Universal Linear Circuits

  • Liu, Changling;Wang, Jianping;Chen, Hongyao;Li, Zizheng
    • Current Optics and Photonics
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    • v.6 no.1
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    • pp.15-22
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    • 2022
  • This paper describes the construction of a phase shifter with low loss and small volume. To construct it, we use the two graphene layers that are separated by a hexagonal boron nitride (hBN) and embedded in a silicon waveguide. The refractive index of the waveguide is adjusted by applying a bias voltage to the graphene sheet to create an optical phase shift. This waveguide is a compact device that only has a radius of 5 ㎛. It has a phase shift of 6π. In addition, the extinction ratio (ER) is 11.6 dB and the insertion loss (IL) is 0.031 dB. Due to its unique characteristics, this device has great potential in silicon on-chip optical interconnection and all-optical multiple-input multiple-output processing.

The Design of Microwave Integrated Circuit for 2-bit Phase Shifter (마이크로파 2비트 이상기의 집적회로 설계)

  • Son, Tae Ho;Lee, Sang Seol
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.3
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    • pp.408-412
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    • 1987
  • The designing method of the reflection and the loaded-line phase shifter is presented. Its phase shift is variable with changing of the stub parameters. In this paper, we design the 2-bit phase shifter which have 10\ulcornerand 90\ulcornerbit phase shift and analysi its characteristics. The experiments show 2d B max.insertion loss, 2.0max. input VSWR and 6\ulcornerphase error on 2.9-3.1GHz frequency range. They agree well with the theoretical results.

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Microwave Wideband Constant Phase Shifter (마이크로파 광대역 정위상기)

  • Bae, Jung-Yi
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.2
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    • pp.182-188
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    • 1986
  • A method of wideband constant phase control is proposed. This can be applied to reflection type phase shifter with p-i-n diode. Using the proposed method, a microwave phase network which consists of a transmission line and reactive circuit element is suggested. By determining theproper values of design parameters, the desired wideband constant phase with different specification can easily be designed. Also, using the proposed method, the parameters variation, and 1.1 dB of insertion loss in the range of 12% bandwidth.

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Reflection-Type 5-bit Digital Phase Shifter with Constant Insertion Loss (균일 삽입 손실 특성을 갖는 반사형의 5-비트 디지털 위상 변위기)

  • 고경석;최익권
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.6
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    • pp.582-589
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    • 2002
  • This paper presents 12.2 GHz ~ 12.7 GHz frequency band reflection type 5-bit digital phase shifter with constant insertion loss property that was fabricated with relatively low cost's InGaAs HEMT for amplifier. The unavoidable large insertion loss difference between on and off states of HEMT, when it is designed by conventional design theory based on ideal switching device, is removed by transforming the HEMT impedances at on and off states to other proper values connecting a certain length transmission line to HEMT and then applying the conventional design theory. The fabricated 5-bit digital phase shifter shows very good insertion loss properties of less than 1.5 dB insertion loss difference and -4.5 dB ~ -6 dB insertion loss in 35 phase steps at 12.2 GHz ~ 12.7 GHz. These results verify the design method presented in this paper, which is useful to design phase shifter of constant insertion loss with non-ideal switching device.

Design and Fabrication of 5-Bit Broadband MMIC Phase Shifter (5-Bit 광대역 MMIC 위상 변위기 설계 및 제작)

  • 정상화;백승원;이상원;정기웅;정명득;우병일;소준호;임중수;박동철
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.2
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    • pp.123-129
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    • 2002
  • 5-bit broadband MMIC phase shifter has been designed and fabricated. For the broadband performance, 11.25$^{\circ}$, 22.5$^{\circ}$, 45$^{\circ}$ and 90$^{\circ}$ bit have been designed with Lange coupler and 180$^{\circ}$ bit has been implemented by using shorted coupled line with Lange coupler and $\pi$-network of transmission line. Due to Lange coupler with large size, the Lange couplers have been folded far circuit size reduction. Low loss PIN diode has been utilized as a switch for each bit. Fabricated 5-bit broadband phase shifter shows the measured results that RMS phase error of 5 major phases is 3.5$^{\circ}$, maximum insertion loss is 12.5 dB, and maximum input and output return loss are 7 dB and 10 dB, respectively. The size of fabricated phase shifter is 6.5$\times$5.3 $ extrm{mm}^2$.