• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.181-182
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• 2011

Phase-change materials can be cycled by exposure to laser beam, and as a function of the pulse intensity and duration, the laser beam triggers the switching from crystalline to amorphous phase and back. In other to progress better crystallization transition and amorphization long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10, 20 and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.69-70
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• 2006

A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.

• The Journal of the Acoustical Society of Korea
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• v.27 no.4
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• pp.178-182
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• 2008

In measurements of the vibration of structures underwater with a laser Doppler vibrometer, the surface vibration is measured by means of detecting the phase change of the laser beam due to the structural vibration. The laser beam passes through the sound field radiated from the vibrating structures underwater. It experiences an additional phase change due to the change in refractive index in the radiated sound field. This phase change due to the sound field may cause the error in surface vibration measurements. In this paper, this phase change due to the radiated sound filed has been analyzed. The numerical simulation has been peformed to evaluate the phase change in sound field radiated from an infinite cylindrical structure vibrating underwater.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.49 no.9
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• pp.565-571
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• 2000

SRM has been applied to many commercial applications that require economical advantages and high performance abilities. But it has some drawbacks such as acoustic noise due to the abrupt change of mmf level when commutation. The abrupt change of a phase excitation produces mechanical stresses and it results in torque ripple and noise. This paper deals with an analysis of vibration and noise in SRM drive. Several types of excitation method are taken into account. The 1-phase and 2-phase excitation technique of short-pitch winding 2-phase excitation technique of full-pitch winding are tested. The acoustic noise is reduced remarkably through the sequential phase excitation in the 2-phase excitation. It is because that the scheme reduces abrupt change of excitation level by distributed balanced excitation with free-wheeling during commutation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.86-90
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• 2017

This work reports the phase-change behavior and thermal stability of doped GeSbTe/GeSbTe bilayers. We prepared the bilayers using RF sputtering, and annealed them at annealing temperature ranging from $100^{\circ}C$ to $400^{\circ}C$. The sheet resistance of the bilayer decreased and saturated with increasing annealing temperature, and the saturated value was close to that of pure GeSbTe film. The surface of the bilayer roughened at $400^{\circ}C$, which corresponds to the surface roughening of doped GeSbTe film. Mixed phases of face-centered cubic and hexagonal close-packed crystalline structures were identified in the bilayers annealed at elevated temperature. These results indicate that the phase-change behavior of the bilayer depends on the concurrent phase-transitions of the two GeSbTe-based films. The dopants in the doped GeSbTe film were diffused out at annealing temperatures of $300^{\circ}C$ or higher, which implies that the thermal stability of the bilayer should be considered for its application in phase-change electronic devices.

• Transactions of the Society of Information Storage Systems
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• v.3 no.3
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• pp.118-122
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• 2007

Phase-change wet-etching technology using GeSbTe phase-change films is developed. Selective etching between an amorphous and a crystalline phase can be carried out with an alkaline etchant of NaOH. Etching selectivity is dependent not only on the concentration of the alkaline etchant but also on the film structure. Specifically, metal films for heat control cause marked effects on the etching properties of GeSbTe film. Surviving amorphous pits can be obtained with Al metal layer, however etched amorphous pits are seen with Ag metal layer. An opposite selective etching behavior can be observed between samples with two different metal layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.347-347
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• 2010

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• Journal of computational fluids engineering
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• v.7 no.4
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• pp.1-7
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• 2002

The phase-change transformation processes are relevant in many engineering applications. In particular, this phenomenon plays an important role in the extraction and fabrication operations in the metallurgical industry. The control of the heat transfer and fluid flow patterns is important to achieve casting quality and competitive production times. In the present study, a simple finite-element algorithm is developed for solid-liquid phase change problems. Natural convection in the liquid phase due to the temperature dependency of water density is considered by a numerical model. The predictions are compared with measurements by the particle image velocimetry(PIV). to show that the calculation results are in good agreement with the experiment results.

• Current Optics and Photonics
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• v.1 no.3
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• pp.239-246
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• 2017

A compact plasmonic switching scheme, based on the phase change of a thin-film chalcogenide material ($Ge_2Sb_2Te_5$), is proposed and numerically investigated at optical-communication wavelengths. Surface plasmon polariton modal analysis is conducted for various thicknesses of dielectric and phase-change material layers, and the optimized condition is induced by finding the region of interest that shows a high extinction ratio of surface plasmon polariton modes before and after the phase transition. Full electromagnetic simulations show that multiple reflections inside the active region may conditionally increase the overall efficiency of the on/off ratio at a specific length of the active region. However, it is shown that the optimized geometrical condition, which shows generally large on/off ratio for any length of active region, can be distinguished by observing the multiple-reflection characteristic inside the active region. The proposed scheme shows an on/off switching ratio greater than 30 dB for a length of a few micrometers, which can be potentially applied to integrated active plasmonic systems.

• Journal of Advanced Marine Engineering and Technology
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• v.28 no.8
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• pp.1225-1238
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• 2004

The present study has been performed for obtaining the melting heat transfer enhancement characteristics of water mixture slurries of plural microcapsules having different diameters encapsulated with solid-liquid phase change material(PCM) flowing in a pipe heated under a constant wall heat flux condition. In the turbulent flow region, the friction factor of the present PCM slurry was to be lower than that of only water flow due to the drag reducing effect of the PCM slurry. The heat transfer coefficient of the PCM slurry flow in the pipe was increased by both effects of latent heat involved in phase change process and microconvection around plural microcapsules with different diameters. The experimental results revealed that the average heat transfer coefficient of the PCM slurry flow was about 2～2.8 times greater than that of a single phase of water.