• Journal of information and communication convergence engineering
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• 제13권4호
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• pp.280-285
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• 2015

Double random phase encryption (DRPE) is one of the well-known optical encryption techniques, and many techniques with DRPE have been developed for information security. However, most of these techniques may not solve the fundamental security problem caused by using fixed phase masks for DRPE. Therefore, in this paper, we propose a key phase mask updating scheme for DRPE to improve its security, where a spatial light modulator (SLM) is used to implement key phase mask updating. In the proposed scheme, updated key data are obtained by using previous image data and the first phase mask used in encryption. The SLM with the updated key is used as the second phase mask for encryption. We provide a detailed description of the method of encryption and decryption for a DRPE system using the proposed key updating scheme, and simulation results are also shown to verify that the proposed key updating scheme can enhance the security of the original DRPE.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.194-195
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• 2001

We fabricated fiber bragg gratings using interferometric method with Phase mask. The interferometer consisted of two plane-parallel mirrors and a phase mask perpendicular to mirrors. The Gratings were written using an Argon-ion laser. The experimental setup could change Bragg wavelength given by the phase mask. (omitted)

• Current Optics and Photonics
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• 제3권5호
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• pp.401-407
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• 2019

Polymeric optical waveguide devices with Bragg gratings have been investigated, for implementing tunable lasers and wavelength filters used in wavelength-division-multiplexed optical communication systems. Owing to the excellent thermo-optic effect of these polymers, wavelength tuning is possible over a wide range, which is difficult to achieve using other optical materials. In this study the phase-mask technology, which has advantages over the conventional interferometeric method, was introduced to facilitate the fabrication of Bragg gratings in polymeric optical waveguide devices. An optical setup capable of fabricating multiple Bragg gratings simultaneously on a 4-inch silicon wafer was constructed, using a 442-nm laser and phase mask. During fabrication, some of the diffracted light in the phase mask was totally reflected inside the mask, which affected the quality of the Bragg grating adversely, so experiments were conducted to solve this issue. To verify grating uniformity, two types of wavelength-filtering devices were fabricated using the phase-mask lithography, and their reflection and transmission spectra were measured. From the results, we confirmed that the phase-mask method provides good uniformity, and may be applied for mass production of polymer Bragg-grating waveguide devices.

• 한국멀티미디어학회논문지
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• 제19권6호
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• pp.1043-1051
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• 2016

In this paper, double encryption technique of binary image using random phase mask and 2-step phase-shifting digital holography is proposed. After phase modulating of binary image, firstly, random phase mask to be used as key image is generated through the XOR operation with the binary phase image. And the first encrypted image is encrypted again through the fresnel transform and 2-step phase-shifting digital holography. In the decryption, simple arithmetic operation and inverse Fresnel transform are used to get the first decryption image, and second decryption image is generated through XOR operation between first decryption image and key image. Finally, the original binary image is recovered through phase modulation.

• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.901-907
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• 2000

As the minimum feature size for making ULSI approaches the wavelength of light source in optical lithography, the aerial image is so hardly distorted because of the optical proximity effect that the accurate mask image reconstruction on wafer surface is almost impossible. We applied the Optical Proximity Correction(OPC) on isolated patterns assuming Attenuated Phase Shift Mask(APSM) as well as binary mask, to correct the widening of isolated patterns. In this study, we found that applying OPC to APSM shows much better improvement not only in enhancing the resolution and fidelity of t도 images but also in enhancing the process margin than applying OPC to the binary mask. Also, we propose the OPC method of APSM for isolated patterns, the size of which is less than the wavelength of the ArF excimer laser. Finally, we predicted the resolution limit of optical lithography through the aerial image simulation.

• 전자공학회논문지 IE
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• 제48권2호
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• pp.1-5
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• 2011

HVPE법으로 $3{\mu}m$의 GaN epi를 성장하고 이 위에 DC 마그네트론 Sputter를 이용하여 Ti stripe 패턴 형성하였으며 다시 HVPE를 이용하여 $120{\mu}m$ ~ $300{\mu}m$ 두께의 GaN를 overgrowth하였다. 성장된 GaN는 SEM 측정으로 Ti 패턴한 부분에서 void가 관찰되었고 보다 두꺼운 GaN를 성장시에는 크랙이 void를 따라 발생할 수 있음을 확인하였으며 XRD측정으로 FWHM은 188 arcsec로 측정되었다. 성장전의 GaN epi와의 반치폭을 비교하였을 때 패턴에 사용된 Ti는 overgrowth시 결정성에는 크게 영향을 주지 않는다는 것을 확인하였다.

• 한국광학회지
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• 제18권5호
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• pp.303-308
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• 2007

디지털 홀로그래피 현미경을 이용하여 반도체 공정에 사용되는 위상차 포토마스크의 결함을 측정하였다. 이러한 위상차 포토마스크는 위상차를 이용하여 반도체 문양을 만들기 때문에 일반 현미경으로는 패턴을 알 수 없을 뿐 아니라 위상마스크의 결함은 더욱더 찾기 어렵다. 디지털 홀로그래피 현미경을 이용하면 한 장의 홀로그램을 이용하여 위상차 포토마스크의 3차원 구조와 결함을 동시에 측정할 수 있다.

• 반도체디스플레이기술학회지
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• 제15권2호
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• pp.32-37
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• 2016

Sidewall angle (SWA) of an absorber stack in extreme ultraviolet lithography mask is considered to be $90^{\circ}$ ideally, however, it is difficult to obtain $90^{\circ}$ SWA because absorber profile is changed by complicated etching process. As the imaging performance of the mask can be varied with this SWA of the absorber stack, more complicated optical proximity correction is required to compensate for the variation of imaging performance. In this study, phase shift mask (PSM) is suggested to reduce the variation of imaging performance due to SWA change by modifying mask material and structure. Variations of imaging performance and lithography process margin depending on SWA were evaluated through aerial image and developed resist simulations to confirm the advantages of PSM over the binary intensity mask (BIM). The results show that the variations of normalized image log slope and critical dimension bias depending on SWA are reduced with PSM compared to BIM. Process margin for exposure dose and focus was also improved with PSM.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.62-63
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• 2001

We studied a method to use a variable discrete random phase mask in 2-D binary data representation for efficient holographic data storage. The variable phase mask is realized by use of a liquid crystal display.

• 대한기계학회논문집B
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• 제36권10호
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• pp.1011-1017
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• 2012

본 논문에서는 롤타입 마스크를 사용한 마이크로/나노 구조 제작용 광학 리소그래피 방법을 소개한다. 이 생산 방법은 다양한 목표 해상도에 따라 위상지연 리소그래피방법과 포토리소그래피로 나뉜다. 사용되는 빛의 파장대보다 작은 해상도를 갖는 패턴을 제작하기 위해서 실린더 형태의 위상지연 마스크를 활용한 근거리 노광 방식을 사용한다. 또한 필름 형태의 금속 마스크를 써서 포토리소그래피를 연속방식으로 수행하였는데 이 방식은 실린더 마스크의 회전수를 조절함으로써 노광 결과 패턴의 주기를 실시간으로 조절할 수 있다. 이 기술의 응용으로 금속 그물패턴으로 만들어진 100 $mm^2$ 넓이의 투명전극을 제작하였다.