• Journal of Ocean Engineering and Technology
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• v.20 no.3 s.70
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• pp.1-6
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• 2006

Modulation theory describes propagation of surface waves with deep wave number and frequency modulation. Locally spectrally narrow wave packet can have accumulated large scale frequency shift of carrier wave during propagation. Some important nonlinear modulation effects, such as negative frequencies, phase kinks, crest pairing, etc., often observed experimentally at long fetch propagation of finite amplitude surface wave trains, are reproduced by the proposed theory. The presented model permits also to analyze the appropriately short surface wave packets and modulation periods. Solutions show the wave phase kinks to arise on areas' of relatively small free surface displacement in complete accordance with the experiments.

• Applied Microscopy
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• v.29 no.1
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• pp.95-103
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• 1999

Microstructural observations on the pseudo-brookite $MgTi_2O_5$ and the similar type of $(In_{0.36}Zn_{1.09})Ti_2O_{5.64}$ were carried out using a top-entry HRTEM working at 200 kV. The modulated structures were found in $(In_{0.36}Zn_{1.09})Ti_2O_{5.64}$, however, not in $MgTi_2O_5$. The electron diffraction patterns of sublattice in $(In_{0.36}Zn_{1.09})Ti_2O_{5.64}$ are quite similar to those of pseudo-brookite $MgTi_2O_5$. but the complicated superlattice reflections are present in the diffraction patterns. Four types of modulations have been found. The periodicities for the modulated structure are found to be 3.63 nm, 0.79 nm and 0.64 nm along [220] direction, and 0.81 nm along [420] direction. The phase transition from the modulated structure to the unmodulated one was also observed in situ due to the electron beam irradiation reversibly. Further damage by the electron beam made the crystal to be fragmented into many small crystals with the formation of the voids at the kinks in ledged structure of the surface. The anisotropic arrangements of In and O atoms in $(In_{0.36}Zn_{1.09})Ti_2O_{5.64}$ might cause the compound to be unstable under the electron beam.

• Korean Journal of Optics and Photonics
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• v.14 no.6
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• pp.669-673
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• 2003

We fabricated a buried-ridge waveguide laser diode (B-RWG LD) which has more advantages for obtaining lateral single mode operation on the same ridge width and for the planarization of the device surface, compared to the conventional RWG LD. In this LD, the difference of the lateral effective refractive index can be controlled by the thickness of the InGaAsP layer which is grown on the active and the p-InP layers. The InGaAsP multiple quantum well was grown on a n-InP substrate by the CBE. The buried ridge structure was formed by selective wet etchings, followed by liquid phase epitaxy methods. The fabricated LD with the ridge width of 7 ${\mu}{\textrm}{m}$ showed a linear increase of the optical power up to 20 ㎽ without any kinks and a saturated output power of more than 80 ㎽. By measuring the far field pattern, we demonstrate that LDs with the ridge widths of 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$ were operated in a lateral single mode up to 2.7I$_{th}$ and 2.4I$_{th}$, respectively.ely.