• Title/Summary/Keyword: Phase chnge memory device

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Phase Change Properties of Amorphous Ge1Se1Te2 and Ge2Sb2Te5 Chalcogenide Thin Films (비정질 Ge1Se1Te2 과 Ge2Sb2Te5 칼코게나이드 박막의 상변화특성)

  • Chung Hong-Bay;Cho Won-Ju;Ku Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.10
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    • pp.918-922
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    • 2006
  • Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.