• 제목/요약/키워드: Phase change temperature

검색결과 1,244건 처리시간 0.033초

기후변화로 인한 수온상승이 굴양식 본양성 생산방식의 경제성에 미치는 영향분석 (The Economic Feasibility Analysis of Grow out Phase Production of Oyster Farming by Rising Water Temperature)

  • 최종두;최영준
    • Ocean and Polar Research
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    • 제36권2호
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    • pp.157-163
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    • 2014
  • This study analysed the economic feasibility per hectare of grow out phase production of Oyster farming by rising water temperature in Ocean. Elevated Water temperature by climate change had a bad influence for oyster production and economic feasibility. In the case of production units, the total output of oyster decreases from 213,840 to 205,594 units. Using cost-benefit analysis with discounting rates (5.5%), we estimated the net present value (NPV) and benefit cost ratio (BCR) until 2100 years. The model results showed that the NPV without water temperature rise was 1,565,619,893 won and the NPV with water temperature rise was 1,540,493,059 won. Also, BCR estimated that the former was 2.095 better than the latter was 2.077. To summarise, the economic effect per hectare of water temperature rise in ocean did the damage to the economic loss about 25,126,834 won.

상 변화 메모리 재료 내의 Ga 주입에 미치는 GaGe 스퍼터링 전력의 영향 (Effect of GaGe Sputtering Power on Ga Doping in Phase Change Memory Materials)

  • 정순원;이승윤
    • 한국전기전자재료학회논문지
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    • 제28권5호
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    • pp.285-290
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    • 2015
  • The phase change memory material is an active element in phase change memory and exhibits reversible phase transition behavior by thermal energy input. The doping of the phase change memory material with Ga leads to the increase of its crystallization temperature and the improvement of its amorphous stability. In this study, we investigated the effect of GaGe sputtering power on the formation of the phase change memory material including Ga. The deposition rate linearly increased to a maximum of 127 nm and the surface roughness remained uniform as the GaGe sputtering power increased in the range from 0 to 75 W. The Ga concentration in the thin film material abruptly increased at the critical sputtering power of 60 W. This influence of GaGe sputtering power was confirmed to result from a combined sputtering-evaporation process of Ga occurring due to the low melting point of Ga ($29.77^{\circ}C$).

Ge-Se의 스위칭 특성 향상을 위한 Sb-doping에 관한 연구 (Electrolyte Mechanizm Study of Amorphous Ge-Se Materials for Memory Application)

  • 남기현;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.69-69
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    • 2009
  • In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sh-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sh-doped Ge-Se-Te thin films.

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PRAM Switching Device By Using Current Pulse Modulation

  • Lee, Seong-Hyun;Gil, Gyu-Hyun;Lee, Jung-Min;Song, Yun-Heup
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.384-384
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    • 2012
  • PRAM switching device by using current pulse modulation was investigated to verify its possibility for 3D architecture. In this work, two phase change materials connected in series having a different crystallization temperature are used. Its structural for different phase change material was evaluated by electrical resistance. We confirmed that Germanium-Antimony-Tellurium (GST) alloy and Germanium- Copper-Tellurium (GCT) alloy material were selected according to crystallization temperature, ${\sim}180^{\circ}C$ for switching and ${\sim}240^{\circ}C$ for memory devices, respectively. From this research, it is expected that phase change switching device could have advantages of process in terms of material similarity and structural simplification.

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The Indoor Environmental Quality Improving and Energy Saving Potential of Phase-Change Material Integrated Facades for High-Rise Office Buildings in Shanghai

  • Jin, Qian
    • 국제초고층학회논문집
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    • 제6권2호
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    • pp.197-205
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    • 2017
  • The conflict between indoor environmental quality and energy consumption has become an unneglectable problem for highrise office buildings, where occupants' productivity is highly affected by their working environment. An effective Façade, therefore, should play the role of an active building skin by adapting to the ever-changing external environment and internal requirements. This paper explores the energy-saving and indoor environment-improving potential of a phase-change material (PCM) integrated Façade. Building performance simulations, combined with parametric study and sensitivity analysis, are adopted in this research. The result quantifies the potential of a PCM-integrated Façade with different configurations and PCM properties, taking as an example a south-oriented typical office room in Shanghai. It is found that a melting temperature of around $22^{\circ}C$ for the PCM layer is optimal. Compared to a conventional Façade, a PCM-integrated Façade effectively reduces total energy use, peak heating/cooling load, and operative temperature fluctuation during the periods of May-July and November-December.

Von-Kármán 회전 유동 하에서의 물의 결빙 (Freezing of Water in Von-Kármán Swirling Flow)

  • 유주식
    • 설비공학논문집
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    • 제8권3호
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    • pp.413-422
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    • 1996
  • Freezing of water in von-$K{\acute{a}}rm{\acute{a}}n$ swirling flow is considered. The transient behavior of the temperature distribution in both solid and liquid phases and freezing rate are determined. The fluid flow induced by the rotation of solid strongly inhibits the freezing process. The thickness of frozen layer is inversely proportional to the square root of the angular velocity of solid. As the angular velocity or initial liquid temperature becomes larger, the freezing process is more strongly inhibited by the fluid flow. When phase change is present, the transient heat transfer rate is greater than the case with no phase change.

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N - Octadecane의 상변화 열전달현상에 관한 연구 (A Study on Heat Transfer with Phase Change of N - Octadecane)

  • 김유;황태연;김기운
    • 설비공학논문집
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    • 제1권2호
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    • pp.138-145
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    • 1989
  • Experimental and numerical analysis were performed to investigate the heat transfer phenomena during phase change. N-octadecane were used as a phase change material and TRUMP computer code was used as a numerical tool. Also, two quarter segment of cylinder shape was chosen as a vessel to simulate to this research. The major contribution factor on the solidus surface movement was environmental temperature and the effect of roller gap and material initial temperature were insignificant. Experimental and numerical results were generally in good agreement and the effect of the mesh size ($22{\times}22$ and $33{\times}33$) was negligible.

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Magnetic and magneto-optical properties of two metallic phase magnet Co/Co$_2$TiSn films

  • Kim, T. W.;Lee, J. W.;S. C. Shin
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.375-377
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    • 1998
  • The magneto-optical properties of Co/Co$_2$TiSn two-phase magnet films were studied. These films show that relatively large Kerr rotations which are -0.4 deg. at the wavelength of 400 nm, compared to that of pure Co. It is conceivable that the magneto-optical effects may be due to both contributions of ferromagnetic Co matrix and ferromagnetic Co$_2$TiSn Heusler alloy precipitate. The perpendicular magnetization curve domonstrates a typical bubble domain hysteresis loop. the saturation magnetization change of the annealed film is less sensitive to temperature in the low temperature region and the Curie temperature of Co$_2$TiSn Heusler alloy precipitate is a little higher in the annealed film. These can be explained by the increase of the number of Co-Co exchange interaction in Heusler alloy structure resulting from the change of chemical ordering by annealing.

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유한요소법을 이용한 순수 물의 상변화 과정에 대한 수치해석 (Finite Element Analysis on Phase-Change Process of Pure Water)

  • 홍영대;차경석;서석진;박찬국
    • 한국전산유체공학회지
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    • 제7권4호
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    • pp.1-7
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    • 2002
  • The phase-change transformation processes are relevant in many engineering applications. In particular, this phenomenon plays an important role in the extraction and fabrication operations in the metallurgical industry. The control of the heat transfer and fluid flow patterns is important to achieve casting quality and competitive production times. In the present study, a simple finite-element algorithm is developed for solid-liquid phase change problems. Natural convection in the liquid phase due to the temperature dependency of water density is considered by a numerical model. The predictions are compared with measurements by the particle image velocimetry(PIV). to show that the calculation results are in good agreement with the experiment results.

상 변화와 인터페이스 이론을 이용한 고에너지물질의 반응연구 (Study of energetic materials using phase change and interface theory)

  • 김기홍;김학준;김형원;여재익
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2008년도 제31회 추계학술대회논문집
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    • pp.60-63
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    • 2008
  • 고에너지 물질의 상변화는 연소과정에서 발생하는 필연적으로 중요한 요소이다. 연소과정에서 발생한 고온, 고압의 가스는 주변의 물질과 상호작용을 통해 복잡한 현상을 일으키게 된다. 본 연구에서는 고에너지 물질의 상변화를 해석을 하기 위한 기초 연구로 상변화 변수를 이용하여, 증기 폭발을 해석하였다.

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