• Title/Summary/Keyword: Phase change characteristics

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The fabrication of a micro pump with a flap valve and a phase change actuator (알루미늄 플랩 밸브와 상변화 구동 마이크로 펌프의 제작)

  • Lee, Sang-Woo;Sim, Woo-Young;Yang, Sang-Sik
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.1023-1025
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    • 1998
  • This paper presents the fabrication of a micro pump consisting of a pair of Al f1ap wave and a phase change actuator. The phase change actuator is composed of a heater, a silicone rubber diaphragm and a working liquid chamber. The diaphragm is actuated by the evaporation and the condensation of the working liquid. The actuator pumps fluid through the valves. The micro pump is fabricated by the anisotropic etch, the boron deposition and the metal evaporation. The forward and the backward flow characteristics of the f1ap valves were obtained. Also, the flow rate of the micro pump has been measured. When the square wave input of 12 V, 60% duty ratio and 0.2 Hz is applied, the average flow rate is $0.15{\mu}{\ell}/sec$ for zero pressure difference.

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The study of phase-change according to temperature and voltage in chalcogenide thin film (칼코게나이드 박막의 온도, 전압에 따른 상변화에 관한 연구)

  • Yang, Sung-Jun;Shin, Kyung;Park, Jung-Il;Nam, Lee-Ki;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.416-419
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    • 2003
  • There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. We studied of phase-change according to temperature and voltage in chalcogenide thin film base on $Ge_2Sb_2Te_5$. Searching for Tg(Glass transition temperature) temperature controlled on hotplate with RT quenching. We measure I-V characteristic through out bottom electrode(ITO) and top electrode(Al) between $Ge_2Sb_2Te_5$. And compared with I-V characteristics after impress the variable stress.

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Effect of Capsule Shape on Heat Storage (캡슐 형상이 축열에 미치는 영향)

  • 정재동
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.14 no.11
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    • pp.964-971
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    • 2002
  • A numerical investigation of the constrained melting of phase change materials within spherical-like capsule is presented. A single-domain enthalpy formulation is used for simulation of the phase change phenomenon. The solution methodology is verified with the melting process inside an isothermal spherical capsule. Especially, the effect of capsule shape on the heat storage is emphasized. Two shape parameters are considered from the real capsule shape showing good characteristics of heat storage and the effect of these parameters is examined. Early during the melting process, the conduction mode of heat transfer is dominant. Thus the capsule shape with large surface area is desirable. However, the capsule shape with large surface area plays negative role on the strength of buoyancy-driven convection that becomes more important as melting continues.

The Fabrication and Test of a Phase-change Type Micropump (상변화 구동 방식 마이크로 펌프의 제작 및 시험)

  • Sim, U-Yeong;Lee, Sang-U;Yang, Sang-Sik
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.6
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    • pp.360-366
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    • 2000
  • This paper presents the fabrication and test of a micropump consisting of a pair of Al flap valves and a phase-change type actuator. The actuator is composed of a heater, a silicone rubber diaphragm and a working fluid chamber. The diaphragm is actuated by the vaporization and the condensation of the working fluid. The micropump is fabricated by the anisotropic etching, the boron diffusion and the metal evaporation. The forward and the backward flow characteristics of the flap valves illustrate the appropriateness as a check valve. Also, the flow rate of the micropump is measured. When the square wave input voltage of 8 V, 70% duty ratio and 2 Hz is applied to the heater, the maximum flow rate of the micropump is $97\muell/min$ for zero pressure difference.

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A study on characteristics of melting in a air-PCM heat exchanger (상변화 열교환기의 용융특성 연구)

  • Oh, Chang-Mook;Yoo, Young-June
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2011.04a
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    • pp.127-129
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    • 2011
  • In the building, controlling temperature is main concern for maintaining fresh environment. To control temperature, phase change material(PCM) can be used as a medium that keeps temperature in certain level. PCM has its own phase change temperature. PCM melts/solidifies while absorbing/releasing the heat. Because of the advantage, PCM can be applied to a air-PCM heat exchanger. In this study, the air-PCM heat exchanger was designed based on the system requirements and experimental analysis was conducted to study on the performance of the heat exchanger.

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Analysis of the Phase Change Temperatures and the Latent Heat Characteristics of $H_2O$-NaCl Mixtures for the Cold thermal Energy Storage (냉축열을 위한 $H_2O$-NaCl 혼합물의 상변화 온도와 잠열 특성분석)

  • Song, H.K.;Ro, J.G.
    • Solar Energy
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    • v.19 no.2
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    • pp.57-65
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    • 1999
  • In this study $H_2O$-NaCl mixture was selected as a cold thermal storage material and its phase change temperature($liquid{\Leftrightarrow}solid$) was controlled with the molar concentration of NaCl. Ion dipole interaction mechanism and the fusion and crystallization structure of $H_2O$-NaCl were visualized with the low and high concentration of NaCl in the heating and cooling processes. In this study, the original cause of the appearance of two steps phase change period in heating and cooing processes were found by the visualization of the ion dipole interaction mechanism of $H_2O$-NaCl, and the theoretical equation of the phase change temperature variation in the NaCl high molar concentration was rearranged.

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Properties of GST Thin Films for PRAM with Composition (PRAM 용 GST계 상변화 박막의 조성에 따른 특성)

  • Jang Nak-Won
    • Journal of Advanced Marine Engineering and Technology
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    • v.29 no.6
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    • pp.707-712
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    • 2005
  • PRAM (Phase change random access memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change materials have been researched in the field of optical data storage media. Among the phase change materials. $Ge_2Sb_2Te_5$ is very well known for its high optical contrast in the state of amorphous and crystalline. However the characteristics required in solid state memory are quite different from optical ones. In this study. the structural Properties of GeSbTe thin films with composition were investigated for PRAM. The 100-nm thick $Ge_2Sb_2Te_5$ and $Sb_2Te_3$ films were deposited on $SiO_2/Si$ substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films. x-ray diffraction (XRD). atomic force microscopy (AFM), differential scanning calorimetry (DSC) and 4-point measurement analysis were performed. XRD and DSC analysis result of GST thin films indicated that the crystallization of $Se_2Sb_2Te_5$ films start at about $180^{\circ}C$ and $Sb_2Te_3$ films Start at about $125^{\circ}C$.

Optical Transmission Characteristics of Tellurium-based Phase-change Chalcogenide Thin Films (Tellurium계 상변화 칼코겐화물 박막의 광투과 특성)

  • Yoon, Hoi Jin;Bang, Ki Su;Lee, Seung-Yun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.7
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    • pp.408-413
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    • 2016
  • The dielectric thin films applied to multi-colored semitransparent thin film solar cells have been extensively studied. In this work, we prepared GeSbTe and GeTe chalcogenide thin films using magnetron sputtering, and investigated their optical and phase-change properties to replace the dielectric films. The changes of surface morphology, sheet resistance, and X-ray diffraction of the Te-based chalcogenide films support the fact that the amorphous stability of GeTe films is superior to that of GeSbTe films. While both amorphous GeSbTe and GeTe films thinner than 30 nm have optical transparency between 5% and 60%, GeTe films transmit more visible light than GeSbTe films. It is confirmed by computer simulation that the color of semitransparent silicon thin film solar cells can be adjusted with the addition of GeSbTe or GeTe films. Since it is possible to adjust the contrast of the solar cells by exploiting the phase-change property, the two kinds of chalcogenide films are anticipated to be used as an optical layer in semitransparent solar cells.

A study on cooling characteristics of clathrate compound for cold storage applications (저온축열용 포접화합물에 냉각특성에 관한 실험적 연구)

  • 한영옥;김진흥
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.11 no.2
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    • pp.205-214
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    • 1999
  • The objective of this paper is to investigate the thermal properties of TMA clathrate compound applicable to cold storage system for building air-conditioning. Especially, the test tube experiments are performed by comparing and analyzing the temperature of phase change, specific heat and subcooling characteristic according to the variation of density, temperature of heat source and charging quantity in TMA clathrate compound. The results are summarized as follows:1) $-15^{\circ}C$ is not proper as the temperature of heat source because the temperature of subcooling is above $8.3^{\circ}C$ 2) temperature of phase change is dropped as the temperature of heat source is lower, 3) the effect of subcooling suppression with about 8$^{\circ}C$ is confirmed when the temperature of heat source is $-10^{\circ}C$ in case of 26, 27, and 30wt%, while the temperature of subcooling is about $0^{\circ}C$ when the temperature of heat source is $-15^{\circ}C$ in case of 25, 26 and 30wt%. Thus, the effect of subcooling suppression is greater as the temperature of heat source is lower. Additionally, the concentrative study is needed on mass concentration causing the phase change without subcooling phenomenon when the temperature of heat source is $-15^{\circ}C$. Thus, it is concluded that TMA clathrate compound has enough thermal properties as the cold storage medium for building air-conditioning.

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Properties of GST Thin Films for PRAM with Composition (PRAM용 GST계 박막의 조성에 따른 특성)

  • Jung, Myung-Hun;Jang, Nak-Won;Kim, Hong-Seung;Ryu, Sang-Ouk;Lee, Nam-Teal;Yoon, Sung-Min;Park, Young-Sam;Lee, Seung-Yun;Yu, Byoung-Gon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.203-204
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    • 2005
  • PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with composition were investigated for PRAM. The 100-nm thick GeTe and $Sb_2Te_3$ films were deposited on $SiO_2$/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

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