• The Korean Journal of Ceramics
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• v.7 no.2
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• pp.70-73
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• 2001

Phase transformation of TiSi$_2$ confined in sub-micron area of which the size is around or smaller than the grain size of C49 TiSi$_2$ phase is studied. It has been known that the C49 to C54 phase change is massive transformation that occurs abruptly starting from C54 nuclei located at triple point grain boundaries of C49 phase. When the C49 phase is confined in sub-micron area, however, the massive phase transformation is observed to be hindered due to the lack of the triple point grain boundaries of C49 phase. Heat treatment at higher temperatures starts to decompose the C49 phase, and the resulting decomposed Ti atoms diffuse to, and react with, the underneath Si material to form C54 phase that exhibits spherical interface with silicon. The newly formed C54 grains can also trigger the massive phase transformation to convert the remaining undecomposed C49 grains to C54 grains by serving as nuclei like conventional C54 nuclei located at triple point grain boundaries.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.798-802
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• 2002

Metallurgical studies on the bonded interlayer of directionally solidified Ni-base superalloy GTD111 joints were carried out during transient liquid phase bonding. The formation mechanism of solid during solidification process was also investigated. Microstructures at the bonded interlayer of joints were characterized with bonding temperature. In the bonding process held at 1403K, liquid insert metal was eliminated by well known mechanism of isothermal solidification process and formation of the solid from the liquid at the bonded interlayer were achieved by epitaxial growth. In addition, grain boundary formed at bonded interlayer is consistent with those of base metal. However, in the bonding process held at 1453K, extensive formation of the liquid phase was found to have taken place along dendrite boundaries and grain boundaries adjacent to bonded interlayer. Liquid phases were also observed at grain boundaries far from the bonding interface. This phenomenon results in liquation of grain boundaries. With prolonged holding, liquid phases decreased gradually and changed to isolated granules, but did not disappeared after holding for 7.2ks at 1473K. This isothermal solidification occurs by diffusion of Ti to be result in liquation. In addition, grain boundaries formed at bonded interlayer were corresponded with those of base metal. In the GTD-ll1 alloy, bonding mechanism differs with bonding temperature.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.13-16
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• 2016

Morphology and formation processes of lamellar grain boundaries in titanium rich binary TiAl intermetallics were studied. TiAl alloys containing aluminum content of 44 to 48 at.% were induction-heated to 1723 K followed by helium-gas-quenching at various temperatures. For the Ti-44%Al, few lamellae were observed in samples quenched from higher than 1473 K. Although small peaks of beta phase were detected using X-ray diffraction, only the ordered hexagonal phase (${\alpha}_2$) with clear APB contrast was observed in TEM observation. For the Ti-48 at.%Al alloy, almost no lamellar structure, and straight grain boundaries were observed in samples quenched from higher than 1623 K. The formation of lamellae along grain boundaries was observed in the sample quenched from 1573 K. The fully lamellar microstructures with serrated boundaries were observed in samples quenched from lower than 1473 K. It was found that the formation of ${\gamma}$ platelets took place at higher temperatures in Ti-48 at.%Al than in Ti-44 at.%Al. Although the size of the serration is different, serrated lamellar grain boundaries could be obtained for all alloy compositions employed. The serration appeared to be due to the grain boundary migration induced by precipitation and growth of ${\gamma}$. Differences in transformation characteristics with aluminum content are discussed.

• Korean Journal of Materials Research
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• v.32 no.4
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• pp.181-185
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• 2022

In this study, phase-pure titanium dioxide TiO₂ ceramics are sintered using standard high-temperature solid-state reaction technique at different temperatures (1,000, 1,100, 1,200, 1,300, 1,400 ℃). The effect of sintering temperature on the densification and impedance properties of TiO₂ ceramics is investigated. The bulk density and average grain size increase with the increase of sintering temperature. Impedance spectroscopy analysis (complex impedance Z^* and complex modulus M^*), performed in a broad frequency range from 100 Hz to 10 MHz, indicates that the TiO₂ ceramics are dielectrically heterogeneous, consisting of grains and grain boundaries. The complex impedance Z^* -plane indicates the resistance of grains of the TiO₂ ceramics increases with increasing sintering temperature, while that of grain boundaries develops in the opposing direction. The complex modulus M^*-plane shows a grain capacitance that seems to be independent of the sintering temperature, while that of the grain boundaries decreases with increasing sintering temperature. These results suggest that different sintering temperatures have effects on the microstructure, leading to changes in the impedance properties of TiO₂ ceramics.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.612-618
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• 2000

The WC/WC grain boundary structure and intergranular segregation in WC-Co and WC-VC-Co cemented carbides were investigated by high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy in order to elucidate whether contiguous boundaries were present or not at the atomic level. Some grain boundaries were separated by liquid phase, while others were contiguous at the atomic level. Cobalt was found to be segregated to WC/WC grain boundaries in WC-Co. Cobalt and vanadium were co-segregated to grain boundaries in WC-VC-Co. The segregation width in both materials was about 6 nm. These results suggest that the vanadium present in contiguous boundaries acts as an effective barrier to the migration of boundaries during sintering and annealing. This could explain the grain growth inhibiting mechanism of VC added to WC-Co.

• Journal of Powder Materials
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• v.8 no.2
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• pp.98-103
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• 2001

Metallic tin powder with diameter less than 50 nm was synthesized by inert gas condensation method and subsequently oxidized to tin oxide ($SnO_2$) along the two heat-treatment routes. The $SnO_2$ powder of single phase with a tetragonal structure was obtained by the heat-treatment route with intermediate annealing step-wise oxidation, whereas the $SnO_2$ powder with mixture of orthorhombic and tetragonal phases was obtained by the heat-treatment route without intermediate annealing (direct oxidation). $SnO_2$ gas sensors fabricated from the nano-phase $SnO_2$ powders were investigated by structural observations as well as measurement of electrical resistance. The $SnO_2$ gas sensors fabricated from the mixed-phase powder exhibited much lower sensitivity against $H_2$ gas than those fabricated from the powder of tetragonal phase. Reduced sensitivity of gas sensors with the new orthorhombic phase was attributed to detrimental effects of phase boundaries between orthorhombic and tetragonal phases and many twin boundaries on the charge mobility.

• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.267-275
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• 1989

YBa2Cu3O7-x oxide superconductors were fabricated by sintering and hotisostatic pressing (HIP), and their microstructures and properties were compared with each other. Thougha part of the second phase was observed along grain boundaries, their structures were consisted of single (123) phase and they had many porosities. But, porosities were remakably reduced by Hiping and the densification was brought about. The structure of (123) compound also showed a number of twins, which are typical of high Tc superconductors. The on-set temperature of YBa2Cu3O7-x compound sintered at 96$0^{\circ}C$ in oxygen and hipped at 88$0^{\circ}C$ was highest, but that shwoed 0 resistance at 87$^{\circ}$K, which is a little lower than the compound sintered at 96$0^{\circ}C$. HIP treatment also increased the critical current density of as-sintered compound. However, its value was low, which may be ascribed to the many pores of starting-sintered compact and partially to the second phase along grain boundaries.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.69-74
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• 1995

GaAs tilt grain boundaries were propared by growing GaAs epilayers on Ge bicrystals by an organometallic vapor phase epitaxy (OMVPE) method ∑ =9 tilt grain boundaries were produced when two different first-order twin boundaries interacted with one another in GaAs epilayers. Structural investigations were performed for the coherent and second-order twin boundaries of GaAs by high-resolution transmission electron microscopy (HRTEM). Polarities of cross-boundary bondings were determined from the high-order Laue zone (HOLZ) lines in the (200) convergent beam disks : these were recorded from the two grains on either side of the boundaries, respectively, at particular diffraction conditions.

• Nuclear Engineering and Technology
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• v.41 no.6
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• pp.841-848
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• 2009

A simple model to analyze non-linear density-wave instability in a sodium-cooled helically coiled steam generator is developed. The model is formulated with three regions with moving boundaries. The homogeneous equilibrium flow model is used for the two-phase region and the shell-side energy conservation is also considered for the heat flux variation in each region. The proposed model is applied to the analysis of two-phase instability in a JAEA (Japan Atomic Energy Agency) 50MWt No.2 steam generator. The steady state results show that the proposed model accurately predicts the six cases of operating temperatures on the primary and secondary sides. The sizes of three regions, the secondary side pressure drop according to the flow rate, and the temperature variation in the vertical direction are also predicted well. The temporal variations of the inlet flow rate according to the throttling coefficient, the boiling and superheating boundaries and the pressure drop in the two-phase and superheating regions are obtained from the unsteady analysis.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.659-667
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• 1997

The influence of SiO$_2$on the microstructure and electrical properties of zinc oxide varistor was investigated. Zn$_2$SiO$_4$third phase in the sintered body was found at grain boundaries, multiple grain junctions, and occasionally within ZnO grains. This phase acted as a grain growth inhibitor, which retard the grain growth of the ZnO matrix by impeding migration on the grain boundaries. As SiO$_2$ addition increases, average grain size decreased from 40.6${\mu}{\textrm}{m}$ to 26.9${\mu}{\textrm}{m}$ due to the pinning effect by Zn$_2$SiO$_4$ and drag effect by Si segregation at grain boundaries, the breakdown voltage consequently increased. When SiO$_2$ addition is increased, interface state density decreased, however, the barrier height increased by decrease of donor concentration, as a result, the nonlinear exponent increased and leakage current decreased. While, as SiO$_2$ addition increase, it was found that the apparent dielectric loss factor shows a tendency of decrease. Wholly, electrical properties of zinc oxide varistor can be said to be improved by SiO$_2$addition.