• 한국세라믹학회지
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• 제48권3호
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• pp.246-250
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• 2011

Effects on sintering and electrical properties of $La_{0.7}Ca_{0.3}Cr_{0.9}Co_{0.1}O_{3-{\delta}}$ system, a interconnect material for cylindrical and flat tubular solid oxide fuel cells (SOFC), have been investigated by Ca-source when using $CaCO_3$ and $CaF_2$. When using $CaCO_3$ and $CaF_2$ was mixing as Ca-source, single phased perovskite solid solution was observed for each sample. The sintering temperature was decreased by $CaF_2$ contents was increased. When using 0.1 mole $CaF_2$ was densely sintered at $1400^{\circ}C$ and relative density was 93.8%. Also, electrical conductivity in oxidation and reducing atmosphere was 47, 4.3 S/cm, respectively, due to $F^-$ ion enhance the electrical conductivity in reducing atmosphere.

• 한국결정학회지
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• 제8권2호
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• pp.75-80
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• 1997

PbMg1/3Mb2/3Oc(PMN)은 대표적인 완화형 강유전체로 완만형상전이 거동을 연구하는데 중요한 재료로 이용되고 있다. 본 연구에서는 양질의 PMN 단결정을 성장시킬수 있는 조건을 결정하고 미세구조를 관찰하고자 하였다. PMN 단결정을 융제법 중 자발핵생성법과 상단종자정법을 이용하여 성장하였다. PbO융제를 이용하여 2-5mm의 결정을 성장시켰고, MgO를 100% 이상 융제로 첨가하였을 때 PMN 결정만이 성장됨을 관찰하였다. Pbo-B2O3 융제를 이용하여 (001)면이 잘 발달한 결정을 얻을 수 있었다. PbO-B2O3 융제를 이용하여 상단종자정법에 의해 1cm이상의 큰 단결정을 성장하였다. 안정된 성장조건을 마련하기 위해서는 종자정의 회전속도와 냉각속도, 종자정의 방향 등의 변수를 최적화하기 위한 계속적인 실험이 필요하다. 박편으로 가공한 결정의 전자선 회절패턴을 통해 미소부위에서 Mg2+와 Nb5+가 1:1의 규칙배역을 하고 있음을 확인하였다.

• 한국재료학회지
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• 제15권12호
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• pp.756-759
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• 2005

A lead free piezoelectric material, bismuth sodium barium titanate $(Bi_{0.5}Na_{0.5})_{0.94}Ba_{0.06}TiO_3$ (BNBT), was considered as an environment-friendly alternatives for the current PZT system. A perovskite BNBT was synthesized by conventional bulk ceramic processing technique. In order to improve piezoelectric properties, $La_2O_3$ as a dopant was incorporated into the BNBT system up to 0.025 moi, ana the effects on subsequent the piezoelectric ana dielectric properties were systematically investigated. With increasing $La_2O_3$ contents, the equilibrium grain shape was remarkably evidenced and sintered density was increased. Piezoelectric and dielectric properties were s]town to have maximum values at the $La_2O_3$ contents of 0.02 mol. $La^{3+}$ ions seemed to act as a softener in the BNBT system and to enhance dielectric and piezoelectric properties in this study.

• Transactions on Electrical and Electronic Materials
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• 제6권2호
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• pp.51-56
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• 2005

Ferroelectric Bi$_{3.35}$Sm$_{0.65}$Ti$_{3}$O$_{12}$(BSmT) thin films were synthesized using a sol-gel process. Bi(TMHD)$_{3}$, Sm$_{5}$(O$^{i}$Pr)13, Ti(O$^{i}$Pr)4 were used as the precursors, which were dissolved in 2­methoxyethanol. The BSmT thin films were deposited on Pt/TiO$_{x}$/SiO$_{2}$/Si substrates by spin­coating. The electrical properties of the thin films were enhanced using rapid thermal annealing process (RTA) at 600 $^{circ}$C for 1 min in O$_{2}$. Thereafter, the thin films were annealed from 600 to 720 $^{circ}$C in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The remanent polarization value of the BSmT thin films annealed at 720 $^{circ}$C after the RTA treatment was 35.31 $\mu$C/cmz at an applied voltage of 5 V.

• E2M - 전기 전자와 첨단 소재
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• 제3권3호
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• pp.233-241
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• 1990

본 연구에서는 xPb(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-yBa(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-zPbTiO(0.50.leq.x.leq.0.60, 0.10.leq.y.leq.0.20, 0.20.leq.z.leq.0.40)세라믹을 1050.deg.C에서 2시간동안 유지시켜 일반소성법으로 제작하였다. 시편 제작시 조성은 조성변태 상경계부근을 선택하였으며 Ba(Zn$_{1}$3/ Nb$_{2}$3/)O$_{3}$ 고용량에 따른 purochlore상의 억제 및 그 영향을 조사하고 구조적, 유전적 및 압전적 특성을 측정하였다. X-선 회절분석 및 미세구조의 관찰 결과, Ba(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$의 고용량에 따라 pyrochlore상 및 미반응 물질등은 억제되어 0.20mol 고용된 시편에서는 균질한 perovskite상이 형성되었다. Ba(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$의 고용량이 증가함에 따라 유전상수는 증가하여 0.50PZN-0.20BZN-0.30PT시편의 경우 6880.9의 높은 값을 나타내었으며 정전용량의 온도계수는 감소하여 0.383[%/.deg.C]의 양호한 값을 나타내었다. 큐리온도는 PbTiO$_{3}$의 고용량이 0.20mol에서 0.40mol로 증가함에 따라 30.deg.C에서 170.deg.C로 증가하였다. 전기기계 결합계수 (K$_{p}$), 기계적 품질계수(Qm) 및 압전전하 계수 (d$_{33}$)는 조성변태 상경계 부근의 조성에서 크게 나타났으며 0.60PZN-0.15BZN-0.25PT 시편의 경우 각각 58.5%, 120.5, 150x$10^{-12}$[C/N]의 값을 나타내었다.다.다.

• 센서학회지
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• 제17권6호
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• pp.418-424
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• 2008

The PZT based piezoelectric thick films prepared by screen printing method have been mainly used as a functional material for MEMS applications due to their compatibility of MEMS process. However the screen printed thick films generally reveal poor electrical and mechanical properties because of their porous microstructure. To improve microstructure we mixed attrition milled powder with ball milled powder of 0.01Pb$(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3$-$0.35PbTiO_3$-$0.23PbZrO_3$+0.1 wt% ${Y_2}{O_3}$+1.5 wt% ZnO composition. By mixing 25 % of attrition milled powder and 75 % of ball milled powder, the broadest particle size distribution was obtained, leading to a dense thick film with crack-free microstructure and improved dielectric properties. The X-ray diffraction analysis revealed that the film was in wellcrystallized perovskite phase. The remanent polarization was increased from $13.7{\mu}C/cm^2$ to $23.3{\mu}C/cm^2$ at the addition of 25 % attrition milled powder.

• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.14-17
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• 2002

The effects of substrate temperatures and annealing temperatures on the microstructures and ferroelectric properties of PbZ $r_{0.52}$ $Ti_{0.48}$ $O_3$(PZT) thin fims prepared by pulsed laser deposition (PLD) were investigated. For this purpose, the PZT films were deposited at various substrate temperatures (400~$600^{\circ}C$) with post annealing process in oxygen atmosphere. The single perovskite phase was formed at the deposition temperature of 500 to 55$0^{\circ}C$ without post annealing and the PZT films deposited below 50$0^{\circ}C$ formed the single phase with post annealing at $650^{\circ}C$. The grain size of the films increased and the grain boundary of the films was clearly defined as the substrate temperature increased from 400 to 55$0^{\circ}C$. The remnant polarization (Pr) and the coercive field (Ec) of the films deposited at 55$0^{\circ}C$ and annealed at $650^{\circ}C$ were 34.3 $\mu$C/c $m^2$and 60.2 kV/cm, respectively.y.y.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.51-54
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• 2006

Cathode material, $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$, for low temperature SOFC was prepared by the glycine-nitrate synthesis process (GNP). The characteristics of the synthesized powders were studied with controlling pH of a precursor. The synthesis BSCF powders with pH were agglomeration state and calcinations temperature has not influence on particles. Highly acidicprecursor solution increased a single phase forming the temperature. Also, synthesis BSCF powder was show result for thermal analysis and alteration of difference crystal with pH. It is considered that Ba and Sr cannot complex by carboxylic acid group of glycine, because under highly acidic condition the caboxylic group mainly combined with $H^+$ insead of alkali and alkaline earth cations. In case of using precursor solution with pH $2{\sim}3$, a single perovskite phase was obtained at $1000^{\circ}C$. Polarization resistance of $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ was measured by AC impedance spectroscopy from the two electrode symmetric cell. Area specific resistance of the $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ air electrode at $500^{\circ}C\;and\;600^{\circ}C$ were $0.96{\Omega}?cm^2$ and $0.16{\Omega}?cm^2$, respectively.

• 공업화학
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• 제30권1호
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• pp.43-48
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• 2019

본 연구는 매체순환연소공정용 산소전달입자로서 $CaSnO_3$ 입자의 타당성을 조사하기 위해 수행하였다. $CaSnO_3$은 페롭스카이트 구조를 가지고, 반복되는 환원-산화 반응 후에도 구조적안정성을 보였다. 산소전달량은 환원 반응 시 결정구조 변화를 통해 계산된 이론 수치와 거의 동일한 15.4 wt%를 가졌다. 10번의 환원과 산화 반응 후에, 산소전달량과 산소전달속도는 작동 온도에서 일정하게 유지되었다. 결론적으로, $CaSnO_3$ 입자는 CLC의 산소 운반체로서 좋은 대체 물질이 될 수 있다고 판단하였다.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.929-935
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• 2010

$(1-x)BaTiO_3-x(Bi_{0.5}Na_{0.5})TiO_3$ ($0.01{\leq}x{\leq}0.10$) ceramics were fabricated with muffled sintering by a modified synthesis process. Their positive temperature coefficient of resistivity (PTCR) characteristics were investigated systematically. All specimen showed a perovskite structure with a tetragonal symmetry. Both the lattice parameter of a and c axes were slightly decreased with increasing $(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) content. Grain growth was achieved when the incorporated BNT was increased to 6 mol% and the inhibition of grain growth is considered to be due to the appearance of Ba vacancy ($V^{"}_{Ba}$) in the $(1-x)BaTiO_3-x(Bi_{0.5}Na_{0.5})TiO_3$ ($0.08{\leq}x$). With 4 mol% BNT addition, room temperature resistivity decreased to $48 \Omega{\cdot}cm$ and a resistivity jump ($\rho_{max}/\rho_{min}$) was as high as $1.1{\times}10^4$, respectively. Curie temperature was also increased to $171^{\circ}C$ with increasing BNT content.