• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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• pp.5-8
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_{2}O_{9}(SBT)$ thin films are deposited on Pt-coated electrode$(Pt/TiO_{2}/SiO_{2}/Si)$ using RF magnetron sputtering method. With increasing annealing tempera ture from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The dielectric constant is 213 at annealing temperature of $750[^{\circ}C]$ and dielectric loss have a stable value within 0.1. Leakage current density is $1.01{\times}10^{-8} A/cm^{2}$ at annealing temperature of $750[^{\circ}C]$ The fatigue characteristics of SBT thin films did not change up to $10^{10}$ switching cycles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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• pp.9-12
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)$ thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using RF magnetron sputtering method. With increasing post-annealing temperature from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}C/cm^{2}$] 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of $750[^{\circ}C]$ is $1.01{\times}10^{-8}A/cm^2$ at 100[kV/cm]

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.235-236
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• 2006

The contact resistance and grain boundary potential barrier of ceramic $BaTiO_3$ PTCR were investigated. The electroless plated Ni, evaporated Al, and Ag paste were chosen as electrode materials of PTCR device for comparison analysis before and after heat treatment. The contact resistance of electrode were measured by electrometer (dc), digital multimeter (dc), and LCR meter (ac). In the case of Al electroded samples, the heat treatment and protective oxide layer had high resistance and effect on the stability of PTCR effect against contact resistance degradation, but the Ag-paste had comparably high contact resistance before heat treatment and decreased after heat treatment with safe. On the other hand, the samples with electroless plated Ni electrode had good properties of contact resistance against aging.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1106-1111
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• 2006

To improve warpage, delamination and the chemical reaction between 2 different co-fired materials, the bonding behavior with common glass was studied. As shown in the previous paper, the phenomenon of the infiltration is different with the composition of the glass. In particular, in the case of low temperature melting glass, infiltration is experimented in this study. GA-1 glass is infiltrated among $BaTiO_3$ particles below $800^{\circ}C$ and is made by glass/ceramic composite. Until the laminate is fired under $850^{\circ}C$, provskite phase is observed. Although in the case of GA-12 glass, the temperature of the glass infiltration is lower than it of GA-l glass, the perovskite phase already disappears at $800^{\circ}C$. As a result, GA-1 and GA-12 glasses are infiltrated among particles at low temperature, however, the chemical reactivity of the glass/ceramic and sintering temperature should be considered.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.167-170
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• 2000

The structural changes and the dielectric properties of $(Ba_{1-x}Ca_x)(Mg_{1/3}Ta_{2/3})O_3$ (x=0, 0.2, 0.4, 0.6, 0.8, 1) were investigated. The densities of samples were gradually decreased with increasing x, (BMT=7.69, CMT=5.25 $g/cm^3$). The crystal structure of BMT was a untiltied perovskite structure, however BCMT showed antiphase tilting and antiphase-inphase tilting structure. The dielectric constant($\varepsilon_r$) of the highest value was 33 at x=0.2 (BMT=24, CMT=17). The maximum quality factor was 27,500GHz in BMT. The quality factor· of BCMT was decreased to x<0.2 (5,000GHz), and was gradually increased to x>0.2. The temperature coefficients of dielectric constant was positive at x<0.8, and negative in CMT.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.100-103
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• 1993

Ferroelectric lean-titanate thin films were fabricated by sol-gel processing. Sol-gel derived $PbTiO_3$ thin films crystallized into the expected tetragonal perovskite structure when heated to $600^{\circ}C$ and above. The effects of annealing temperature on grain size made with SEM observation are reported. The films heated at $650^{\circ}C$ for 30min showed a square-type hysteresis loop with $P_r$ and $E_c$ of $11.5{\mu}C/cm^2$, 115kV/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.298-298
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• 2010

In this study, both structural, dielectric properties of the NKN-0.94BNT-0.06BT ceramics were investigated. All samples of the NKN-0.94BNT-0.06BT ceramics were fabricated by conventional mixed oxide method with Pt electrodes. We report the improved electrical properties in the perovskite structure composed of the NKN, BNT and the BT ceramics. We investigated the effects of NKN, BT on the structural and electrical properties of the NKN-0.94BNT-0.06BT ceramics. The dielectric and structural properties of the NKN-0.94BNT-0.06BT ceramics were superior to those of single composition NKN, NKN-BNT and those values for the NKN-0.94BNT-0.06BT ceramics were 1455, 0.025 and $29.04{\mu}C/cm^2$.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.895-899
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• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.231-232
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• 2008

The coupling between electric, magnetic, and structural order parameters results in the so-called multiferroics, which possess ferroelectricity, ferromagnetism, and/or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) allow potential applications in information storage, spintronics, and in magnetic or electric field sensors. Perovskite compound $BiFeO_3$ (BFO) is antiferromagnetic below Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature(RT) due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors which cause leakage in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is fabricating donor doped BFO compounds and thin films. We report here the successful fabrication of the Nd, Ti co-doped $BiFeO_3$ ceramics and thin films by pulsed laser deposition technique.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.218-218
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• 2008

최근 미관을 위하여 소형 네온관 등이 사용되고 있다. 따라서 네온관 등 구동에 사용되는 인버터는 안정기 역할을 하면서 소형화와 경량화가 중요한 요소이다. 본 연구는 압전 특성이 우수한 PZT계 세라믹스 조성인 $(Pb_{0.94}Sr_{0.06})[(Ni_{1/2}W_{1/2})_{0.02}(Mn_{1/3}Nb_{2/3})_{0.07}(Zr_{0.51}Ti_{0.49})_{0.91}]O_3$에 특성 향상을 위해 PbO, $Fe_2O_3$, $CeO_2$, Xwt% $Nb_2O_5$ 조성별로 첨가하였으며 그에 따른 유전, 압전 특성을 조사하고 또한 Rosen type의 압전 트랜스포머를 제작하여 각 조성별 변환효율을 측정하였다. 실험방법은 일반적인 세라믹스 제조공정으로 파우더 혼합 후 24시간 ball milling하고 $850^{\circ}C$ 에서 2시간 하소 후 $1230^{\circ}C$에서 2시간 소결하였다. 또한 최종 소결 시편을 이용하여 Rosen type의 압전 트랜스포머를 제작하였다. 상 분석을 위해 XRD를 이용하여 perovskite구조를 확인하고 미세구조확인을 위해 SEM으로 관찰하였다. 압전 특성을 평가하기 위해 압전 $d_{33}$ Meter를 사용하였으며, Impedence analyzer HP 4194A를 이용하여 전기적 특성을 측정하였다.