• The Korean Journal of Ceramics
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• 제1권2호
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• pp.75-80
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• 1995

Development of phases, evolution of microstructures, and dielectric response characteristics of amorphous lead iron tungstates during crystabllization were investiageted. A series of mircographs showing the evolution sequence of microstructures is presented. Crystallization was observed to initiate from inside of the amorphous material. A cubic perovskite phase developed fully at $760^{\circ}C$ from amorphous state via intermediate metastable crystalline structures. Dielectric constant of amorphous PFM was totally insensitive to the temperature change around the Curie temperature of crystalline material. Sintered pellet, with relative density of 96% and an almost pore-free dense internal microstructure, could be prepared from amorphous powder.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.83-86
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• 1989

Lead titanate thin films with a perovskite structure were successfully structure were successfully fabricated on titanium substrate by Chemical Vapour Deposition(CVD). Analyses of Auger Electron Spectroscopy(AES) and X-ray Photoelectron Spectroscopy (XPS) have been performed in order to find a chemical composition of lead titanate films. The analysis of chemical composition by AES and XPS was investigated for variations of deposition temperature and Ti(C$_2$H$_{5}$O)$_4$ fractions. The chemical composition of PbTiO$_3$by XPS analysis was almost constant regardless of deposition parameters and the comparison of chemical composition by AES and XPS was performed.d.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.632-635
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• 2003

[ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The dielectric properties were investigated for various composition ratio and $Nb_2O_5$ doping contents. All the BSCT thick films, sintered at $1420^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The Curie temperature and the relative dielectric constant decreased with increasing Ca content and $Nb_2O_5$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 1.0wt% $Nb_2O_5$ were 1410, 0.65% and 17.29% respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.582-585
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• 2004

Pb0.5Sr0.5TiO3 (PST) thin films were fabricated by the alkoxide-based sol-gel process using spin-coating method on Pt/Ti/SiO2/Si substrate. The PST films annealed from 500C to 650C for 1h show a perovskite phase and dense microstructure with a smooth surface. The grain size and dielectric constant of PST films increases with the increase in annealing temperature, which reduces the SiO2 equivalent thickness of the PST film. The crystallinity or internal strain in the PST thin films analyzed from the diffraction-peak widths correlate well with the decrease in the dielectric losses. The dielectric constants and dielectric loss (%) of the PST films annealed at 650c (teq : 0.89 nm) were 549 and 0.21%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.790-793
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• 2004

이중의 망간 perovskite 블록을 가진 Ruddlesden-Popper 상(R-P phase) $Sr_3Mn_2O_7$ 은 공기중에서 불안정하다. 본 연구에서는 망간 이온 자리에 철 이온을 소량 치환 함으로써 R-P 상을 안정화 시켰으며 이들의 결정구조는 X-선회절 데이터를 이용하여 Rietveld 법으로 정밀화하였다. 안정화에 필요한 Fe 이온의 양은 약 x=0.15로 나타났으며 Fe이온의 양이 증가함에 따라 쉽게 안정화 되었다. 자화율 측정결과 x=0.20 시료는 120K에서 paramgnetic-antiferromagnetic 전이를 나타내었고 이 전이 온도는 치환되는 Fe이온의 양이 증가함에 따라 감소하는 경향을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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• pp.14-14
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• 2010

Recently, low temperature co-fired ceramic (LTCC) technology has gained a remarkable application potential in sensors, actuators and micro systems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of annealing treatment on the electrical properties of $Pb(ZrTi)O_3$ (PZT) thin films deposited on LTCC substrate. PZT thin films were deposited on Au / LTCC substrates by RF magnetron sputtering method. Then, the change of the crystallization of the films were investigated under various annealing temperatures and times. The results showed that the crystallization of the films were enhanced as increasing annealing temperatures. The film, annealed at $700^{\circ}C$, 3min, was well crystallized in the perovskite structure.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.925-928
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• 2011

Perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. This article was investigated ferroelectric materials $Ag(Ta,Nb)O_3$ thick film. In this study, we have fabricated the $Ag(Ta,Nb)O_3$ thick film on the $Al_2O_3$ substrates by screen printing method. The $Ag(Ta,Nb)O_3$ thick film were fabricated by the mixed oxide method. The sintering temperature and time were 1,150$^{\circ}C$, 2 hr. The electrical properties of $Ag(Ta,Nb)O_3$ thick film were investigated at 30~100$^{\circ}C$.

• 한국세라믹학회지
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• 제45권12호
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• pp.788-795
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• 2008

An electrolyte supported SOFC cell was tested at $800^{\circ}C$ in air for 3600 h with an applied current density of $200\;mA/cm^2$ to examine possible cathode degradation issues. A scandium- stabilized zirconia (ScSZ) with additional manganese doping (ScSZ: Mn) was used as electrolyte. A strontium and copper-doped lanthanum ferrite (LaSrCuFe) and platinum were used as cathode and quasi-anode material, respectively. The DC resistance was logged over the complete testing period. Additionally, impedance spectroscopy was used from time to time to track changes of the cell in-situ. Post-test analysis of the cell using methods like scanning electron microscopy imaging and other electrochemical testing methods allow the identification of different degradation sources. The results indicate a promising combination of electrolyte and cathode material in terms of chemical compatibility and electrical performance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.565-568
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• 2001

We have fabricated $Bi_{3.25}La_{0.75}Ti_{3}O_{12}(BLT)$ thin(200nm) films on the $Pt/Ti/SiO_{2}/Si$ substrates using a MOD(Metalorganic decomposition) method with annealing temperature from $550^{\circ}C$ to $750^{\circ}C$. The structural properties of the films examined by x-ray diffraction. The layered-perovskite phase obtained above $600^{\circ}C$. Scanning electron micrographs showed uniform surface composed of rodlike grains. The grain size increased with increasing annealing temperature. The BLT thin films showed little polarization fatigue test up to $3.5{\times}10^{9}$ bipolar cycling at a 5V and 100kHz.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.417-422
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• 2001

The needs of new materials that substitute Si Oxide capacitor layer in high density DRAM increase. So in this paper, we choose the slim region 14/50/50 PLZT composition and fabricated thin films by PLD and estimated the characteristics for DRAM application. 14/50/50 PLZT thin films have crystallized into perovskite structure in the $600^{\circ}C$ deposition temperature and 200 mTorr Oxygen pressure. In this condition, PLZT thin films had 985 dielectric constant, storage charge density 8.17 $\mu$C/$\textrm{cm}^2$ and charging time 0.20ns. Leakage Current density was less than 10$^{-10}$ A/$\textrm{cm}^2$ until 5V bias voltage.