• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.76-79
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• 2000

The $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics were prepared by conventional mixed oxide method. The structural properties of the BZT ceramics with the sintering temperature were investigated by XRD, SEM. The BZT ceramics have a complex-perovskite structure. The BZT ceramics sintered at $1550^{\circ}C$ had a superstructure plane of BZT(100). Increasing the sintering temperature, the bulk density and ordering were increased. The bulk density of the BZT ceramics sintered at $1550^{\circ}C$ was $7.50[g/cm^3]$. Increasing the sintering temperature, the average grain size were increased and pore were decreased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.620-623
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• 2001

The peculiarities of using Self-propagating High-temperature Synthesis (SHS) and solid state phase synthesis for production of high temperature superconductor materials are discussed. Oxide superconductors with general formula $ReBa_2$$Cu_3$$O_{7-x}$ (Re= Y, Yb, Sm, Nd) have been made with using barium oxide initial powder instead of traditional barium carbonate. X-ray powder diffraction showed a single phase orthorhombic perovskite structure was produced in all reactions. Phenomena observed during the grinding of the reactant mixture are presented. Mechano-chemical activation - as a pretreatment of the reactant mixture - strongly influences the kinetic parameters, the reaction mechanism, and the composition and structure of the final product.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.997-1000
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• 2001

Pb(Zr$\sub$0.52/Ti$\sub$0.48/)O$_3$(PZT) thin films have been prepared by rf-magnetron sputtering methods and investigated the structural and electrical properties. In order to investigate the effects of sputtering conditions, input power was controlled during deposition. Crystallization process and microstructure of PZT thin films were largely affected by input power. Highly crystallized PZT films with the perovskite structure were successfully obtained on Pt/Ti bottom electrode. The dielectric constants and polarization of PZT thin films were increased with increasing input power, and the coercive electric field was decreased with increasing input power . The dielectric constant of PZT thin films with input power 150 W was 966 at 1 kHz. we, authors, proposed that preferred orientation of PZT thin films were controlled by input power in sputtering methods.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.21-24
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• 1993

The microstructure of the cubic perovskite [(Ba$\sub$85.5/ Ca$\sub$15.5)(Ti$\sub$60/ Mn$\sub$40/)O$_2$]-based dielectrics has been investigated. BCTM which control both A-site and B-site has less electrical characteristics than BaTiO$_3$. The dielectric factor was decreased and the dielectric loss factor was improved because BaMnO$_3$was formed in the solide reaction method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.672-675
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• 2001

The Sr$\sub$0.8/Bi$\sub$2.4/Ta$_2$O$\sub$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. With increasing annealing tempera ture from 600[$^{\circ}C$] to 850[$^{\circ}C$], Bi-layered perovskite phase was crystallized above 650[$^{\circ}C$]. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}$C/$\textrm{cm}^2$], 48[kV/cm] respectively. The dielectric constant and leakage current density is 213, 1.01${\times}$10$\^$-8/ A/$\textrm{cm}^2$ respectively at annealing temperature of 750[$^{\circ}C$].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.1.1-4
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• 1995

In this study, PLZT thin films in AFE region prepared by sol-gel processing were investigated. And PLZT stock solutions were spin-coated on ITO-glass. The PLZT thin films were annealed by RTA. Hysteresis curves, dielectric characteristics and optical transmittances were measured in order to investigates the characteristics far the thin films. The PLZT thin films were crystallized at 750$^{\circ}C$ for 5 mimutes by RTA and the rosette structure composed of perovskite observed in the thin films. In case La content was 2/90/10 antiferroelectric-ferroelectric phase boundary was 2/90/10 PLZT thin film, and its hysteresis curve was good for application of optical information storage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.545-548
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• 2002

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$(BSCT) (x=0.10, 0.15, 0.20) powders were prepared by the sol-gel method and BSCT thick films were fabricated by the screen-printing method. The structural properties as a faction of the composition ratio were studied. As a result of the differential thermal analysis (DTA), exothermic perk was observed at around $860^{\circ}C$ dne to the formation of the polycrystalline perovskite phase. The BSCT thick films sintered at $1350^{\circ}C$ for 2h showed the average grain size of $2{\sim}7{\mu}m$. The average thickness of BSCT thick films, obtained by 3 times of screen-printing, was approximately $85{\mu}m$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.621-624
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• 2002

Lanthanum nickel oxide$(LaNiO_3)$ powders have been prepared via a mechanochemical processing without any additional heat treatment. When a mixed lanthanum and nickel oxide was mechanically activated for 6 hours with 450 rpm, a stable and single phase perovskite powder was successfully synthesized and its crystallite size of about 90 nm is calculated by using the Scherrer equation.

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.846-850
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• 2005

[ $SrTiO_3$ ]:Al, Pr red phosphors for FED were synthesized by solid state reaction method. The dependence of their luminescent properties on Sr and Al concentration was investigated. The $SrTiO_3$: Al, Pr phosphors showed the characteristic X-ray diffraction patterns of the perovskite structure. Photoluminescence intensity and lattice constant in $SrTiO_3$: Al, Pr phosphors changed in quite a similar manner with Sr concentration. Photoluminescence intensity increased with increasing lattice constant, and the decrease of photoluminescence intensity and lattice constant occurred in the vicinity of 1 mol Sr concentration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.212-213
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• 2006

BSCT(60/30/10) powder specimens were fabricated by sol-gel method and BSCT thick films were fabricated by screen-printing method. The coating and drying procedure was repeated 6 times. Then the structural properties as a function of the sintering temperature. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the crystalline phase. The BSCT sintered at $1430^{\circ}C$ showed the cubic perovskite structure. The prosity and thickness of the BSCT thick films was decreased with sintering temperature. The thickness of BSCT thick films at $1420^{\circ}C$ was approximately $40{\mu}m$.