• Title/Summary/Keyword: Pd film

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Effects of Modified Atmosphere Packaging on the Quality of Chitosan and $CaCl_2$ Coated Mushroom (Agaricus bisporus) (환경가스조절 포장이 키토산 및 $CaCl_2$로 코팅 처리된 양송이 버섯의 품질에 미치는 영향)

  • Lee, Jin-Sil
    • Korean Journal of Food Science and Technology
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    • v.31 no.5
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    • pp.1308-1314
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    • 1999
  • The effects of modified atmosphere(MA) packaging and coating on the quality of mushroom (Agaricus bisporus) were investigated. Whole mushrooms(100 g) were packed with polyvinyl chloride(PVC) film wrap, PD941 and PD961 film bags and were stored in a chamber at $12^{\circ}C$ and 80% RH for 6 days. Gas composition of packages, respiration rate, weight loss, color and maturity index of MA packaged mushrooms were examined. The wrap packaged mushrooms showed different level of internal $CO_2$ concentrations among water washed, chitosan coated and $CaCl_2$ coated subgroups significantly at 5% level. The maximum $CO_2$ concentration of PD941 and PD961 packages for all coated showed $4.1{\sim}4.7%$ and $10.4{\sim}11.7%$, respectively, for the first day. PD961 package showed the lowest $O_2$ concentration compared to other groups. There were no significant respiration rate differences between wrap packed and PD941 packaged. Respiration rate of water washed. chitosan coated and $CaCl_2$ coated in PD961 packaged was 192 mg, 226 mg and 245 mg, respectively. Maturity index of PD961 packaged were not significantly different among the water washed, chitosan and $CaCl_2$ coated packages. Chitosan coating showed a negative effect on color change of mushrooms. The weight loss of 961 packaged was lower $(7.0{\sim}8.0%)$ that those of wrap packaged and PD941 packaged.

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The surface propery change of multi-layer thin film on ceramic substrate by ion beam sputtering (이온빔 스퍼터링법에 의한 다층막의 표면특성변화)

  • Lee, Chan-Young;Lee, Jae-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.259-259
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    • 2008
  • The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

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Changes in Quality Characteristics of Cherry Tomato Packaged with Different Films (포장 조건에 따른 방울토마토의 저장 중 품질 특성 변화)

  • 박우포;조성환;김철환
    • Food Science and Preservation
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    • v.9 no.2
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    • pp.121-125
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    • 2002
  • Cherry tomato was packed with several plastic films, and investigated the quality characteristics such as gas composition, weight loss, microbial load, soluble solid content, total acidity during storage at 12$\^{C}$. Cast polypropylene(CPP), low density polyethylene(LDPE), polyolefin(MPD, PD961) and perforated polyolefin(PY85) were used as packaging film. Oxygen and carbon dioxide concentration inside packages generally showed a stabilized levels after 10 days, but those of CPP and PD961 changed throughout the storage. Weight loss of PY85 was 25.6 % after 20 days, while others maintained around 1.0%. Total microbial count showed a increase pattern similar to yeast and mold, and CPP maintained the highest microbial load after 10 days. MPD retarded the decay of cherry tomato to 5.3%, while others showed above 20% after 20 days.

Fabrication and Characterization of piezoelectric thick films prepared by Screen Printing Method (Screen Printing법을 이용한 압전 후막의 제조 및 특성연구)

  • 김상종;최형욱;백동수;최지원;윤석진;김현재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.873-876
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    • 2000
  • Characteristics of piezoelectric thick films prepared by screen printing method were investigated. The piezoelectric thick films were printed using Pb(Mg,Nb)O$_3$-Pb(Zr,Ti)O$_3$system. The lower electrodes were coated with various thickness of Ag-Pd by screen printing to investigate the effect as a diffusion barrier and deposited with Pt by sputtering on Ag-Pd. The ceramic paste was prepared by mixing powder and binder with various ratios using three roll miller. The fabricated thick films were burned out at 650$^{\circ}C$ and sintered at 950$^{\circ}C$ in the O$_2$condition for each 20, 60min after printing with 350mesh screen. The thickness of piezoelectric thick film was 15∼20 $\mu\textrm{m}$ and the Ag-Pd electrode acted as a diffusion barrier above 3 $\mu\textrm{m}$ thickness. When the lower electrode Ag-Pd was 6 $\mu\textrm{m}$ and the piezoelectric thick films were sintered by 2nd step (650$^{\circ}C$/20min and 950$^{\circ}C$/1h) using paste mixed Pb(Mg,Nb)O$_3$-Pb(Zr,Ti)O$_3$$.$ MnO$_2$+ Bi$_2$O$_3$. V$_2$O$\_$5/ and binder in the ratio of 70:30, the remnant polarization of thick film was 9.1 ${\mu}$C /cm$^2$.

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Effects of metal catalysts on the characteristics of NO sensor using ZnO thin film as sensing material (금속 촉매가 ZnO 박막을 감지물질로 이용한 NO 센서의 특성에 미치는 영향)

  • Chung, Gwiy-Sang;Jeong, Jae-Min
    • Journal of Sensor Science and Technology
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    • v.19 no.1
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    • pp.58-61
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    • 2010
  • This paper describes the fabrication and characteristics of NO sensor using ZnO thin film by RF magnetron sputter system. The sensitivity, working temperature, and response time of sputtered pure ZnO thin film and added catalysts such as Pt, Pd, Al, Ti on those films were measured and analyzed. The sensitivity of pure ZnO thin film at working temperature of $300^{\circ}C$ is 0.875 in NO gas concentration of 0.046 ppm. At same volume of the gas in chamber, measuring sensitivity of 1.87 at $250^{\circ}C$ was the case of Pt/ZnO thin film. The ZnO thin films added with catalyst materials were showed higher sensitivity, lower working temperature and faster adsorption characteristics to NO gas than pure ZnO thin film.

Interdiffusion in Pd/Cu Multilayered Film and Its Thermal Stability (Pd/Cu 다층박막의 상호확산 및 열안전성)

  • 전인준;이영백;홍재화
    • Journal of the Korean Vacuum Society
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    • v.3 no.1
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    • pp.51-58
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    • 1994
  • 확산 현상은 박막성장 과정 및 박막의 기계, 전기, 자기적 성질 이해에 중요한 역할을 한다. 열 처리에 의한 상호확산 때문에 생긴 Pd/Cu 다층박막의 조성변화를 AES depth-profiling 방법을 이용해 서 조사하였다. 열처리전 시료에서의 각형의 초기 조성분포가 여러온도에서의 열처리에 의해 정현파 모 양의조성분포로 변화되었다. 조성의존성을 고려하지 않은 상호확산 계수를 정현파 분포의 진폭으로부터 구하였으며, 1.66 eV의 값을 갖는 활성화에너지는 Arrhenius plot으로부터 산출하였다. 또한 Boltzmann-Matano 방법을 사용해서 15$0^{\circ}C$에서의 조성의존 상호확산계수도 구하였다. 열처리에 의해 조 성균일화가 되는 것으로만 알려졌던 본물질계에서도 상분리가 생성됨을 관찰하였고, 그 열처리 조건은 $180^{\circ}C$에서 150분 보다 짧아야함을 밝혔다.

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FIRST PRINCIPLE CALCULATIONS OF MCD SPECTRA FOR SANDWICHED Co(110) SYSTEMS

  • Hong, Soon-C.;Lee, Jae-Il;Wu, R.;Freeman, A.J.
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.575-578
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    • 1995
  • X-ray magnetic-circular-dichroism (MCD) spectra, orbital ($$) and spin magnetic moments ($$) for Co(110) monolayers a free standing mode or sandwiched between Pd(Pd/1Co/Pd)and Cu layers (Cu/1Co/Cu) are calculated using the thin film full potential linearized augmented plane wave energy band method. In contrast to the double peak structure predicted for the Co(0001) surface, only a minor side peak is found in the MCD spectra for Cu/Co/Cu, while MCD spectra for the other systems show a single peak structure. The MCD sum rules originally derived from a single ion model are found in the band approach to be valid for the systems investigated. However, for the spin sum rule, the magnetic dipole term ($$) is not negligible and needs to be included.

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Degradation of the Pd catalytic layer electrolyte in dye sensitized solar cells (염료감응태양전지에서 Pd 촉매층의 전해질과의 반응에 따른 특성 저하)

  • Noh, Yunyoung;Song, Ohsung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.14 no.4
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    • pp.2037-2042
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    • 2013
  • A TCO-less palladium (Pd) catalytic layer on the glass substrate was assessed as the counter electrode (CE) in a dye sensitized solar cell (DSSC) to confirm the stability of Pd with the $I^-/I_3{^-}$electrolyte on the DSSC performance. A 90nm-thick Pd film was deposited by a thermal evaporator. Finally, DSSC devices of $0.45cm^2$ with glass/FTO/blocking layer/$TiO_2$/dye/electrolyte(10 mM LiI + 1 mM $I_2$ + 0.1 M $LiClO_4$ in acetonitrile solution)/Pd/glass structure was prepared. We investigated the microstructure and photovoltaic property at 1 and 12 hours after the sample preparation. The optical microscopy, field emission scanning electron microscopy (FESEM), cyclic voltammetry measurement (C-V), and current voltage (I-V) were employed to measure the microstructure and photovoltaic property evolution. Microstructure analysis showed that the corrosion by reaction between the Pd layer and the electrolyte occurred as time went by, which led the decrease of the catalytic activity and the efficiency. I-V result revealed that the energy conversion efficiency after 1 and 12 hours was 0.34% and 0.15%, respectively. Our results implied that we might employ the other non-$I^-/I_3{^-}$electrolyte or the other catalytic metal layers to guarantee the long term stability of the DSSC devices.

Interfacial disruption effect on multilayer-films/GaN : Comparative study of Pd/Ni and Ni/Pd films

  • 김종호;강희재;김차연;전용석;서재명
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.113-113
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    • 2000
  • 직접천이형 wide band gap(3.4eV) 반도체중의 하나인 GaN를 청색 및 자외선 laser diode, 고출력 전자장비 등으로 응용하기 위해서는 낮은 접합저항을 갖는 Ohmic contact이 선행되어야 한다. 그러나 만족할만한 p-type GaN의 Ohmic contact은 아직 실현되고 있지 못하며, 이는 GaN와 접합 금속과의 구체적인 반응의 연구를 필요로 한다. 본 연구에서 앞서 Pt, Pt, Ni등의 late transition metal을 p-GaN에 접합시킨 결과 이들은 접합 당시 비교적 평탄하나 후열 처리과정에서 비교적 낮은 온도에서 기판과 열팽창계수의 차이로 인하여 평탄성을 잃어버리면서 barrier height가 증가한다는 사실을 확인하였다. 따라서 본 연구에서는 이러한 열적 불안정성을 극복하기 위하여 Ni과 Pd를 차례로 증착하고 가열하면서 interfacial reaction, film morphology, Fermi level의 움직임을 monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy) 그리고 ex-situ AFM을 이용하여 밝히고자 하였다. 특히 후열처리에 의한 계면 반응에 수반되는 구성 금속원소 간의 합금현상과 금속 층의 평탄성이 밀접한 관계가 있다는 것을 확인하였다. 이러한 합금과정에서 나타나는 금속원소들의 중심 준위의 이동을 체계적으로 규명하기 위해서 Pd1-xNix와 Pd1-xGax 합금들의 표준시료를 arc melting method로 만들어 농도에 따른 금속원소들의 중심 준위의 이동을 측정하여, Pd/Ni/p-GaN 및 Ni/Pd/p-GaN 계에서 열처리 온도에 따른 interfacial reaction을 확인하였다. 그 결과 두 계가 상온에서 nitride 및 alloy를 형성하지 않고 고르게 증착되고, 열처리 온도를 40$0^{\circ}C$에서 $650^{\circ}C$까지 증가시킴에 따라 계면반응의 부산물인 metallic Ga은 증가하고 있으마 nitride는 여전히 형성되지 않는 것을 확인하였다. 증착당시 Ni이 계면에 있는 Pd/Ni/p-GaN의 경우에는 52$0^{\circ}C$까지의 열처리에 의하여 Ni과 Pd가 골고루 섞이고 그 평탄성도 유지되고 barier height의 변화도 없었다. 더 높은 $650^{\circ}C$ 가열에 의해서는 surface free energy가 작은 Ga의 활발한 편석 현상으로 인해 표면은 Ga이 풍부한 Pd-Ga의 합금층으로 덮이고, 동시에 작은 pinhole들이 발생하며 barrier height도 0.3eV 가량 증가하게 된다. 반면에 증착당시 Pd이 계면에 있는 Ni/Pd/p-GaN의 경우에는 40$0^{\circ}C$의 가열까지는 두 금속이 그들 계면에서부터 섞이나, 52$0^{\circ}C$의 가열에 의해 이미 barrier height가 0.2eV 가량 증가하기 시작하였다. 더 높은 $650^{\circ}C$가열에 의해서는 커다란 pinhole, 0.5eV 가량의 barrier height 증가, Pd clustering이 동시에 관찰되었다. 따라서 Ni과 Pd의 일함수는 물론 thermal expansion coefficient가 거의 같으며 surface free energy도 거의 일치한다는 점을 감안하면, 이렇게 뚜렷한 열적 안정성의 차이는 GaN와 contact metal과의 반응시작 온도(disruption onset temperature)의 차이에 기인함을 알 수 있었다. 즉 계면에서의 반응에 의해 편석되는 Ga에 의해 박막의 strain이 이완되면, pinhole 등의 박막결함이 줄어 들고, 이는 계면의 N의 out-diffusion을 방지하여 p-type GaN의 barrier height 증가를 막게 된다.

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Acceleration Sensor Using Optical Fibers and Film Gratings (광섬유와 필름격자를 이용한 가속도 센서)

  • Lee, Youn-Jea;Jo, Jae-Heung;Kwon, Il-Bum;Seo, Dae-Cheol;Lee, Nam-Kwon
    • Korean Journal of Optics and Photonics
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    • v.19 no.3
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    • pp.175-181
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    • 2008
  • We develop a fiber optic acceleration sensor with LED, PD, POF, and a cantilever beam, having film grating at the edge of the beam. Light is transmitted from LED to PD through the film grating. When the cantilever beam moves by external vibration, output light is modulated as sinusoidal signals. The characteristics of output signals are dominated by the spacing of the film grating and also by the size and the elasticity of the beam. Two output signals, having constant initial phase difference, are obtained by two gratings with 90 degree phase difference. Those two signals are used to determine phase angle, which is proportional to the displacement of the beam. Finally, the acceleration is determined from conversion equation between displacement and acceleration. This sensor is designed for monitoring the vibration of large and complex building in the low frequency range of below 7 Hz, and is particularly suitable to measure acceleration in electromagnetic environments.