• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.476-480
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• 1999

PbSe thin films were grown using PLD method on the p-Si(100) substrate. To determine what crystalline structure of PbSe thin films have according to the growth temperature, the films were prepared under a substrate temperature changing between a room temperature and $400^{\circ}C$. As a result of analyzing XRD patterns of PbSe thin films prepared at various substrate temperatures and FWHM of PbSe(200) rocking curve, it was found that PbSe thin film obtained at the growth temperature of $200^{\circ}C$ was best crystallized. In addition, the surface morphology of PbSe thin film observed using AFM found itself having the most regularly arranged particles in case of growing the film at $200^{\circ}C$. The measurement of Hall effect indicated that PbSe thin films were n-type semiconductors and that current-voltage characteristic curve exhibit the typical p-n junction phenomenon. In addition, electric conductivity of PbSe thin films was found somewhat higher than that of general semiconductors.

• Journal of Sensor Science and Technology
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• v.11 no.4
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• pp.247-253
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• 2002

For fabrication of the pyroelectric IR sensor $(Pb,La)TiO_3(PLT)$/$LiTaO_3$/(LTO)/PLT ferroelectric thin films was deposited by rf magnetron sputtering followed by rapid thermal annealing and the crystallinity as a function of annealing temperature and time was investigated. Permittivity and dielectric loss factor of ferroelectric thin films as a function of c-axis preffered orientation was measured. Also pyroelectric coefficient of ferroelectric thin films with largest c-axis preffered orientation was measured and obtain figure of merit of voltage response($F_V$) and detectivity($F_D$). In this case $F_V$, $F_D$ was $5.63{\times}10^{-10}\;C{\cdot}cm/J$, $1.98{\times}10^{-8}\;C{\cdot}cm/J$, respectively.

• Journal of the Korean Society of Radiology
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• v.3 no.4
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• pp.29-33
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• 2009

Recently, the compound materials(a-Se, $HgI_2$, PbO, CdTe, $PbI_2$, etc.) that are used in flat panel x-ray imager have been studied for digital x-ray imaging. In this paper, the signal detection properties of $HgI_2$ and a-Se conversion layer, are compared. The thick $HgI_2$ film is fabricated by special particle-in-binder method and the conventional vacuum thermal evaporation is used for a deposition of a-Se film. And an electrical characteristic measurements were investigated about leakage current, signal response property and x-ray sensitivity. From the experimental results show that the $HgI_2$ film has a low operation voltage and high signal generation than that of a-Se.

• Analytical Science and Technology
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• v.13 no.2
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• pp.222-228
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• 2000

A detector for monitoring carbon monoxide (CO) in ambient air by nondispersive infrared (NDIR) spectroscopy has been developed and investigated its sensitivity and stability. The essential parts of the absorption cell are three spherical concave mirrors so as to improve the sensitivity by increasing the light path length in the cell. The radius and center of curvature of mirrors and position in the cell was calculated by computer simulation in order that the light path length may be 16m into the 50cm cell. The number of traversals and optical path properties were confirmed by laser beam alignment in transparent absorption cell. The photoconductive type lead selenide (PbSe) was used as CO sensing material, which was cooled to increase the responsibility by thermoelectric cooling method. The detection limit and span drift of the developed CO detector was 0.24ppm and 0.03ppm(v/v) respectively.