• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.715-720
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• 1998

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1315-1322
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• 1994

In this study, stable PbTiO3 coating solution was prepared using diethanolamine(DEA) complexing agent and deposited on indium-tin oxide(ITO) coated glass substrate. Prepared thin films were dense and crack-free. Perovskite-type PbTiO3 thin films could be obtained above 50$0^{\circ}C$, while the films heat-treated above $650^{\circ}C$ showed undesired properties due to interface reactions between films and substrates and warpage phenomena of substrates. Measured maximum dielectric constant and loss tangent were found to be 144 and 0.0163 at 1 kHz, 55$0^{\circ}C$ heat-treatment, respectively.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.371-378
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• 1996

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.168-170
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• 1994

Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were formed by spin coating method on Pt/$SiO_2$Si substrate at 4000ppm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500∼800[$^{\circ}C$] for 1 hour. The final thickness of the thin films were about 4800[A]. The ferroelectric perovskite phases precipitated under the heat-treated at 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ thin films heat-treated at 700[$^{\circ}C$] for 1 hour showed good dielectric and ferroclectric properties.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1454-1456
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• 1994

$Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were formed by spin coating method on $Pt/SiO_2/Si$ substrate at 3000rpm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500 - $800[^{\circ}C]$ for 1 hour. The final thickness of the thin films were about 4800[A]. The 100% ferroelectric perovskite phases precipitated under the heat treated at $700[^{\circ}C]$ for 1 hour. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films heat-treated at $700[^{\circ}C]$ for 1 hour showed good dielectric constant (812) property.

• Journal of the Korean Ceramic Society
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• v.26 no.5
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• pp.670-676
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• 1989

The PbTiO3 is well known materials having remarkable ferroelectric, piezoelectric, and pyroelectric properties. PbTiO3 thin films with a perovskite structure were successfully fabricated on titanium substrate by chemical vapor deposition. These films were characterized according to composition, crystal structure, and electrical properties. Semi-quantitative compositional analysis of the deposited films was made by Auger Electron Spectroscopy(AES). The PbTiO3 film deposited on titanium substrate at the deposition temperature 75$0^{\circ}C$, the Ti(C2H5O)4 fraction 0.15, and O2 partial pressure 0.06atm, has a columnar structure and grows with(001) preferred orientation, and has stoichiometric composition. A clear dielectric transition and offset in the dc conductivity near the transition temperature(48$0^{\circ}C$) were observed in the deposited lead titanate film.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.7
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• pp.914-918
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• 1995

In this study, Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ (x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol%] of Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ was made and spin-coated on the Pt/SiO$_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at 400[.deg. C] for 10[min.]. Sintering temperature and time were 500~800[.deg. C] and 1~60[min.]. The coating process was repeated 6 times and the final thickness of the thin films were about 4800[A]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin fulms were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hours. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.ively.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.253-256
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• 1997

Epitaxially grown Pb(Zr, Ti)O$_3$thin films were prepared on LaAlO$_3$substrates by the dipping pyrolysis process using metal naphthenates as starting materials Homogeneous Pb-Zr-Ti solutions with toluene were spin-coated onto the substrates and pyrolyzed at 50$0^{\circ}C$ Highly oriented Pb(Zr, Ti)O$_3$films confirmed by X-ray diffraction $\theta$-2$\theta$ scans were obtained by heat-treated at 75$0^{\circ}C$ in air The X-ray pole-figure analysis and reciprocal-space mapping of the resulting 0.6$\mu\textrm{m}$ films showed that the thin films comprising the c-axis oriented tetragonal phase have an epitaxial relationship with the LaAlO$_3$substrates.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.791-794
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• 1998

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.212-215
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• 2010

$BiFeO_3/Pb(Zr_{0.95}Ti_{0.05})O_3$ (BFO/PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/$SiO_2$/Si substrate using metal alkoxide solutions. The coating and heating procedure was repeated 6 times to form the heterolayered films. The thickness of the BFO/PZT films after one cycle of drying/sintering is about 30-40 nm. All BFO/PZT films show a void free uniform grain structure without the presence of rosette structures. It can be assumed that the crystal growth of the upper BFO layers can be influenced by the lower PZT layers. As the number of coatings increased, the dielectric constant increased, so that the value for the 6-layer film was 1360 at 1 KHz.