• Title/Summary/Keyword: PbMgNbO3-Pb(Zr,Ti)O3 (PMN-PZT)

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Mn-Modified PMN-PZT [Pb(Mg1/3Nb2/3)O3-Pb(Zr,Ti)O3] Single Crystals for High Power Piezoelectric Transducers

  • Oh, Hyun-Taek;Lee, Jong-Yeb;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.54 no.2
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    • pp.150-157
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    • 2017
  • Three types of piezoelectric single crystals [PMN-PT (Generation I $[Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3]$), PMN-PZT (Generation II $[Pb(Mg_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3]$), PMN-PZT-Mn (Generation III)] were grown by the solid-state single crystal growth (SSCG) method, and their dielectric and piezoelectric properties were measured and compared. Compared to (001) PMN-PT and PMN-PZT single crystals, the (001) PMN-PZT-Mn single crystals exhibited a higher transition temperature between the rhombohedral and tetragonal phases ($T_{RT}=144^{\circ}C$), as well as a higher coercive electric field ($E_C=6.3kV/cm$) and internal bias field ($E_I=1.6kV/cm$). The (011) PMN-PZT-Mn single crystals showed the highest coercive electric field ($E_C=7.0kV/cm$), and the highest stability of $E_C$ and $E_I$ during 60 cycles of polarization measurement. These results demonstrate that both Mn doping (for higher electromechanical quality factor ($Q_m$)) and a (011) crystallographic orientation (for higher coercive electric field and stability) are necessary for high power transducer applications of these piezoelectric single crystals. Specifically, the (011) PMN-PZT-Mn single crystal (Gen. III) had the highest potential for application in the fields of SONAR transducers, high intensity focused ultrasound (HIFU), ultrasonic motors, and others.

Structure and Dielectric Properties of PMN-PNN-PZT ceramics (PMN-PNN-PZT 세라믹스의 구조 및 유전특성)

  • Lee, Jong-Deok;Park, Sang-Man;Park, Gi-Yup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.257-260
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    • 2003
  • In this study, the structural, dielectric and piezielectric properities of $xPb(Mg_{1/3}Nb_{2/3})O_3-(0.5-x)Pb(Ni_{1/3}Nb_{2/3})O_3-0.5Pb(Zr_{0.3}Ti_{0.7})O_3$ ceramics were investigated with the substitution of $PbMg_{1/3}Nb_{2/3}O_3$. The results showed that the substitution of the $PbMg_{1/3}Nb_{2/3}O_3$ was effective in increasing the dielectric constant and electromechanical coupling factor $(K_p)$. The dielectric constant, dielectric loss and Kp showed the highest values of 4293, 2.4%, 0.59 relatively, when the substitution of amount of $PbMg_{1/3}Nb_{2/3}O_3$ was 5 mol%.

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Piezoelectric and Dielectric Characteristics of Low Temperature Sintering Pb(Mg1/2W1/2)O3-Pb(Mn1/3Nb2/3)O3-Pb(Zr1/2Ti1/2)O3 Ceramics With the Substitution of Pb(Mg1/2W1/2)O3 (Pb(Mg1/2W1/2)O3 치환에 따른 저온소결 Pb(Mg1/2W1/2)O3-Pb(Mn1/3Nb2/3)O3-Pb(Zr1/2Ti1/2)O3 세라믹스의 압전 및 유전특성)

  • Yoo Ju-Hyun;Lee Hyun-Seok;Chung Kwang-Hyun;Jeong Yeong-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.5
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    • pp.417-421
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    • 2006
  • In this study, in order to develop low temperature sintering piezoelectric ceramics for LTCC (Low-Temperature Cofired Ceramic) multilayer piezoelectric actuator, PMW-PMN-PZT ceramics using $0.2wt%\; Li_2CO_3$ and $0.25wt%\;CaCO_3$ as sintering aids were investigated according to the varation of PMW substution. Composition ceramics could be sintered at $900^{\circ}C$ by adding sintering aids. As the amount of PMW substitution increased, the crystal structure of PMW-PMN-PZT ceramics moved from tetragonal phase to rhombohedral phase gradually, and MPB(Morphotrophic Phase Boundary) region appeared at 2 mol% PMW substitution. At the sintering temperature of $900^{\circ}C$, the density, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\epsilon}r$), piezoelectric constant(d33) and Curie temperature(Tc) of 2 mol% PMW substituted PMW-PMN-PZT ceramics showed the optimal values of $7.88g/cm^3$, 0.58, 1002, 1264, 352 pC/N and $336^{\circ}C$, respectively, for LTCC multilayer piezoelectric actuator application.

Electric aging phenomena of $0.2(PbMg_{1/3}Nb_{2/3}O_3)-0.8(PbZr_{0.475}Ti_{0.525}O_3)$ Multilayer Ceramic Actuators ($0.2(PbMg_{1/3}Nb_{2/3}O_3)-0.8(PbZr_{0.475}Ti_{0.525}O_3)$ 적층형 세라믹 액츄에이터의 전기적 열화 특성)

  • Koh, Jung-Hyuk;Jeong, Soon-Jong;Ha, Moon-Su;Lee, Dong-Man;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.219-222
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    • 2003
  • $0.2(PbMg_{1/3}Nb_{2/3}O_3)-0.8(PbZr_{0.475}Ti_{0.525}O_3)$ 조성을 이용하여 $5{\times}5{\times}5mm^3$의 적층형 세라믹 액츄에이터 소자를 tape casting 방법으로 제작하였다. 전극재로서는 Ag-Pd를 이용하여 총 50층의 layer를 적층하였으며, 적층된 액츄에이터를 $1100^{\circ}C$의 온도에서 소결하였다. X-ray diffractometer를 이용하여 제작된 소자와 열화된 소자의 구조적인 특성을 분석하였다. 제작된 소자의 열화 특성을 알아보기 위하여 60 Hz 의 triangular wave를 인가하여 열화전과 후의 p-E hystcresis loop의 변화를 살펴보았으며, 인가된 전압의 변화에 따라서 소자에서 발생되는 양의 열을 측정하였다. 파괴된 소자의 파단면에 대한 SEM 분석을 통하여 소자의 파괴 메카니즘을 알아보도록 하였다. 이로부터 전기적 기계적 열화가 소자의 동작에 미치는 영향에 대해서 알아 보았다.

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Microstructure and Electrical Properties of Pb[(Mg,Mn)Nb]O3-Pb(Zr,Ti)O3 Piezoelectric Ceramics

  • Kim, Jin-Ho;Kim, Jong-Hwa;Baik, Seung-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.5
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    • pp.202-209
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    • 2005
  • Phase evolution, microstructure and the electrical properties such as $k_p$ and $Q_m$ of $Pb(Mg_{1/3}Nb_{2/3})O_3[PMN]-Pb(Mn_{1/3}Nb_{2/3})O3[PM'N]-PbZrO_3[PZ]-PbTiO_3[PT]$ quaternary system were investigated within the compositional ranges $0{\leq}y{\leq}0.125$, y+z=0.125, and $0.39{\leq}x{\leq}0.54$ of the formula $Pb_{0.97}Sr_{0.03}[Mg_{1/3}Nb_{2/3})_y\;(Mn_{1/3}Nb_{2/3})_z\;(Zr_{x}Ti_{1-x})_{1-(y+z)}]O_3$. In the case of increasing Mn/(Mg+Mn) ratio for a fixed Zr/Ti ratio of 47.5/52.5, phase relation remained unchanged but the grain size drastically decreased, and the electrical properties changed as following: both $k_P$ and $Q_m$ reached the peak values at $Mn/(Mg+Mn)\cong0.3l7$ and gradually decreased; $\varepsilon33^T$ showed a monotonic decrease; P-E hysteresis loop gradually changed to asymmetrical one, and $E_i$ increased in correspondence. With increasing Zr/Ti ratio for a fixed Mn/(Mg+Mn) ratio of 0.317, on the contrary, the cell parameter $(\alpha^2c)^{1/3}$ gradually increased, and tetragonal-rhombohedral morphotropic phase boundary appeared in the range of $51/49{\leq}Zr/Ti{\leq}54/46$. the meantime, the grain size substantially increased, and the electrical properties changed as following: $k_P$ and $\varepsilon33^T$ reached peak values at Zr/Ti=51/49 and 48/52, respectively, and then gradually decreased; change of $Q_m$ was adverse to $k_P$; both $E_C\;and\;E_i$ considerably decreased while $P_S$ moderately increased. For the system 0.125(PMN+PM'N)-0.875PZT studied, the composition Mn/(Mg+Mn)=0.3l7 and Zr/Ti=51/49 revealed some promising electrical properties for piezoelectric transformer application such as $k_P=0.58,\;Q_m\cong1000$, and $\varepsilon^T_{33}=970$, as well as dense and fine-grained microstructure.

유도결합형 플라즈마에 의한 $PMN-PT(Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3)$ 박막의 건식식각 특성

  • 장제욱;이용혁;김도형;이재찬;염근영
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.223-223
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    • 1999
  • PZT(PbZr1-xTixO3) 박막은 고유전율과 같은 remanent polarization을 가져서 고집적 소자의 커패시터 유전율층 또는 비휘발성 메모리 소자의 제조에 이용되고 있으나, fatigue 와 aging 문제로 인하여 새로운 물질의 개발이 필요한데, 그 대표적으로 연구되고 있는 것이 PMN-PT(Pb(Mg1/3Nb2/3)O-PbTiO3) 이다. 본 실험에서는 sol-gel 법에 의하여 제조된 PMN-PT막을 ICP(Inductively coupled plasma)에 의하여 식각하였고 mask층으로는 PR을 사용하였다. 식각 가스로는 Ar, Cl, BCl를 단독 또는 혼합하여 사용하였으며, 식각 특성을 보기 위하여 RF Power, Substrate bias, Operation pressure, Substrate temperature를 변화시켰다. 식각속도는 stylus profiler를 이용하여 측정하였고, 단면 profile은 scanning electron microscopy (SEM)를 이용하여 관찰하였다. 식각 메커니즘을 규명하고자 식각된 박막의 표면을 X-ray photoelectron spectroscopy (XPS)로 관찰하였고, optical emission spectroscopy (OES)로 플라즈마 특성을 규명하고자 하였다. 식각속도는 Ar 또는 Cl2 플라즈마에 BCl3 가스를 혼합하였을 경우 증가되었고, BCl3 가스를 단독으로 사용하여도 높은 식각속도를 나타내었으며, BCl3의 첨가량이 늘어날수록 PR의 식각속도는 감소하여 높은 선택비를 보였다. 90% BCl3/10%Cl2 플라즈마에서 2800$\AA$/min의 식각속도 그리고 1.37:1의 PR 선택비를 얻을 수 있었다. Power나 기판 bias 증가에 따라 식각속도는 증가하였으나 기판 온도변화에는 민감하지 않았다. BCl3 rich에서의 식각속도 증가와 선택비 증가는 B2O3의 형성에 의한 것으로 생각된다.

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Fabrication and Characterization of PMN-PZT Thick Films Prepared by Screen Printing Method (Screen Printing법을 이용한 PMN-PZT 후막의 제조 및 특성 연구)

  • 김상종;최형욱;백동수;최지원;김태송;윤석진;김현재
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.11
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    • pp.921-925
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    • 2000
  • Characteristics of Pb(Mg, Nb)O$_3$-Pb(Zr, Ti)O$_3$system thick films fabricated by a screen printing method were investigated. The buffer layer were coated with various thickness of Ag-Pd by screen printing to investigate the effect as a diffusion barrier and deposited Pt as a electrode by sputtering on Ag-Pb layer. The printed thick films were burned out at 650$\^{C}$ and sintered at 950$\^{C}$ in O$_2$condition for each 20, 60min after printing with 350mesh screen. The thickness of piezoelectric thick film was 15∼20㎛ and Ag-Pb layer acted as a diffusion barrier above 3㎛ thickness. The PMN-PZT thick films were screen printed on Pt/Ag-Pb(6m) and sintered by 2nd step (650$\^{C}$/20min and 950$\^{C}$/1h) using paste mixed PMN-PZT and binder in the ratio of 70:30, and the remnant polarization of thick film was 9.1$\mu$C/㎠ in this conditions.

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Low-Firing Pb(Zr,Ti)O3-Based Multilayer Ceramic Actuators Using Ag Inner Electrode

  • Han, Hyoung-Su;Park, Eon-Cheol;Lee, Jae-Shin;Yoon, Jong-Il;Ahn, Kyoung-Kwan
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.6
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    • pp.249-252
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    • 2011
  • We investigated the low firing of $Li_2CO_3$ added $0.2Pb(Mg_{1/3}Nb_{2/3})O_3$ - 0.3Pb($Fe_{1/2}Nb_{1/2}$) - $0.5Pb(Zr_{0.475}Ti_{0.525})O_3$ (PMN-PFN-PZT) ceramics and multilayer actuators (MLAs) using Ag inner electrodes. It was found that 0.1 wt% $Li_2CO_3$ was quite effective in lowering the sintering temperature of PMN-PFN-PZT ceramics from $1,100^{\circ}C$ down to $900^{\circ}C$ without deteriorating their piezoelectric ceramics ($d_{33}$ = 425 pC/N and $k_p$ = 61.9%). However, excess $Li_2CO_3$ up to 0.3 wt% brings about unwanted problems such as the formation of a $LiPbO_2$ secondary phase and subsequent degradation in the piezoelectric properties. Using 0.1 wt% $Li_2CO_3$ added PMN-PFN-PZT ceramics, MLAs with Ag inner electrodes were successfully fabricated, resulting in a normalized strain of 580 pm/V at an electric field of 1.5 kV/mm.

Effect of the Electrode Type on the Dielectric and Piezoelectric Properties of Piezoelectric PMN-PZT Single Crystals (압전 PMN-PZT 단결정의 유전 및 압전 특성에 미치는 전극 종류의 영향)

  • Lee, Jong-Yeb;Oh, Hyun-Taek;Choi, Kyoon;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.52 no.1
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    • pp.77-82
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    • 2015
  • The effect of the electrode type on the dielectric and piezoelectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbZrO_3-PbTiO_3$ (PMN-PZT) single crystals was investigated in an effort to improve their properties for various piezoelectric applications. First, three different types of PMN-PZT single crystals [PMN-PZT-A (piezoelectrically soft type; dielectric constant ~ 10,000), PMN-PZT-B (piezoelectrically soft type; phase-transition temperature between the rhombohedral and tetragonal phases ($T_{RT}$) ~ $145^{\circ}C$), PMN-PZT-C (piezoelectrically hard type; high mechanical quality factor ($Q_m$) ~ 1,000)] were fabricated using the solid-state single crystal growth (SSCG) method. Then, four different types of electrodes [sputtered Au, sputtered Cr/Au, sputtered Ti/Au, and fired Ag] were formed on the single crystals, and their dielectric and piezoelectric properties were measured. The single crystals with a sputtered Ti/Au electrode showed the highest dielectric and piezoelectric constants but the lowest coercive electric field ($E_C$). The single crystals with a fired Ag electrode showed the lowest dielectric and piezoelectric constants but the highest coercive electric field ($E_C$). This dependence on the type of electrode was most significant in the piezoelectrically hard PMN-PZT-C single crystals. However, the effects of the electrode type on the phase transition temperatures ($T_C$, $T_{RT}$) and dielectric loss were negligible. These results clearly demonstrate that it is important to select an appropriate electrode so as to maximize the dielectric and piezoelectric properties of single crystals in each type of piezoelectric application.

Design and Acoustic Properties of Piezoelectric Device with the PMN-PT-PZ System (PMN-PT-PZ계를 이용한 압전소자의 설계 및 음향특성)

  • Go, Young-Jun;Seo, Hee-Don;Nam, Hyo-Duk;Chang, Ho-Gyeong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.283-286
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    • 2000
  • In this study, the acoustic transducer of a thin circular disc-type with PZT/Metal was manufactured. The piezoelectric transducer with 200kHz resonance frequency was designed by considering the sharp directivity and the sound pressure. The dielectric and piezoelectric properties of 0.5 weight percent $MnO_2$ and NiO doped $0.1Pb(Mg_{1/3}Nb_{2/3})O_3-0.45PbTiO_3-0.42PbZrO_3$ ceramics were investigated aiming at acoustic transducer applications. Also, the acoustic characteristics of a thin circular disc-type with metal-piezoceramics have been Investigated.

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