• Korean Journal of Materials Research
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• v.10 no.7
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• pp.478-481
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• 2000

Single phase $Pb(Mg_{1/3}Nb_{2/3})O_3$ ceramics doped by 10 mol% of electron donors such as $La^3,\; Pr^{3+,4+},\; Nd^{3+},\; Sm^{3+}$, were synthesized and their B-site cationic ordering structures were investigated by XRD and TEM. In the XRD patterns, only fundamental reflections were observed for the undoped $Pb(Mg_{1/3}Nb_{2/3})O_3$, while the (h/2 $\textsc{k}$/2ι/2)(h,$\textsc{k}$,ι all odd) superlattice reflections resulting from the 1:1 ordering induced unit cell doubling were also observed for the donor-doped $Pb(Mg_{1/3}Nb_{2/3})O_3$. In the TEM selected area diffraction patterns, the (h/2 k/2 l/2)(h,k,l all odd) superlattice reflection spots as well as the fundamental reflection spots were observed for all the samples, but the relative intensities of the superlattice reflection spots to the fundamental reflection spots were significantly enhanced by the donor-doping. In the TEM dark-field images, antiphase boundaries were observed only for the donor-doped $Pb(Mg_{1/3}Nb_{2/3})O_3$. It was therefore experimentally verified that doping by electron donors such as $La^3,\; Pr^{3+,4+},\; Nd^{3+},\; Sm^{3+}$, enhances the B-site cationic 1:1 ordering in $Pb(Mg_{1/3}Nb_{2/3})O_3$. These experimental results were interpreted in terms of the charge compensation mechanism.

• Bulletin of the Korean Chemical Society
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• v.21 no.8
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• pp.801-804
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• 2000

A crossed beam scattering of a $Pb(ZrxTi1-x)O_3plume$ and an oxygen jetwas studied by using a time-of-flight quadrupole mass spectroscopy. Both simple collisions and reactive scatterings had significant effects on the transportand energetics of ions in the plume. Relative enrichment of metal and metal oxide ions was also changed with the oxygen pulse because of the differences in the mass and chemical properties of the ions. In particular, an anomalous increase ofPb+ ions was observed as the oxygen jet crossed the plume at high laserfluences, while the signal magnitudes of alI other ions were reduced. This originates from the fact that PbO+ ions dissociate easily to liberate Pb+ ions inthe plume since the bond energy of PbO+ is as low as 2.2 eV.

• Journal of the Korean Ceramic Society
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• v.21 no.4
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• pp.349-354
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• 1984

The purpose of present study is to find the structure crystallization mechanism and physical properties in $TiO_2$ containing lead zinc borosilicate glass system. The experiments such as differential thermal analysis infrared spectral analysis. X-ray diffraction analysis and thermal expansion measurements have been done. Differential thermal analysis of coarse and fine glass powder showed bulk nucleating mechanism for high $TiO_2$ containing glasses and surface nucleation mechanism for low $TiO_2$ containing glasses. The prepared glasses crystallized to crystalline mixture of PbO.2ZnO. $B_2O_3$ .4PbO.2ZnO.$5B_2O_3$and 2PbO.ZnO.$B_2O_3$ when heat-treated in the range of 480 and 51$0^{\circ}C$ and crystallized to PbTiO3 when heat-treated at $600^{\circ}C$. Obtained crystalline phase of $PbTiO_3$ in glass matrix strongly affects to thermal expansion coefficient and the value of crystallized glass varied 68.0 to $107.1{\times}10-7$/$^{\circ}C$ depending on the amount of $TiO_2$added. Infrared spectral analysis showed that [$BO_3$] triangle and [$BO_3$] tetrahedral units were coexisted in the glass with high content of PbO.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1274-1279
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• 1998

The glass forming ability of the PbO-B2O3-TiO3-BaO system was investigated in relation to transitieon tem-peratures and the atomic ratio between constituents. Glass forming tendency was improved as the tem-peratures and the atomic ratio between constituents. Glass forming tendency was improved as the tem-perature differences between liquidus temperature and crystallization(or glass transition) temperature de-creased and the temperature difference between crystallization and glass transition temperature increases. The atomic ratio could be used as a criterion to deign glass systems. The interposition of B and Ba atoms between Pb and Ti atoms was one of important factors in glass formation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.2
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• pp.40-52
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• 1992

$PbTi0_3$ thin films were deposited at $550^{\circ}C$ by MOCVD method using titanium-iso-propoxide [$Ti(OC_3H_7)_4$] and tetra-ethyl-lead $[Pb(C_2H_5)_4]$as starting materials. In the present study, Ar and $O_2$were used as a carrier gas and a reaction gas, respectively, and the change of thickness and refractive index, Xray diffraction analysis, and CV characteristic measurements of the films were systematically investigated. As a result of CV characteristic analysis of the annealed $PbTiO_3$ thin films, it is assumed that the films interact with Si substrate at the interface, and X-ray diffraction patterns of the films show characteristic peaks for $PbTiO_3$ With increasing the annealing temperature and time, the thickness of the films tends to decrease but their refractive index increases.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.309-314
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• 1988

In this study, the effect of the size of sintered body on resonant and filter characteristics in Pb(Sn1/2Sb1/2)O3-PbTiO3 piezo-electric system were investigated. The attenuation characteristics of ring-dot type and ladder type filter were also investigated. As the size of sintered body was decreased, the resonant characteristic(Fr, Fa) and the center frequency(Fo) were increased. As the poling field was increased, the Kp and bandwidth were increased. The big difference between rign-dot type and ladder type was the sharpness of bandwidth, selectivity and the movement of center frequency.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.911-918
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• 1993

X-ray photoelectron spectroscopy(XPS) has been empolyed to investigate the structure of PbO-Bi2O3-Ga2O3 glasses. XPS OIS spectra recorded from binary PbO-Ga2O3 glasses clearly showed the presence of two peacks due to bridging and non-bridging oxygens, respectively. Gaussin best-fit deconvolution of the OIS peaks suggested there are substaintial amount of non-bridging oxygens in the structure. Therefore, in addition to the glassforming and charge compensating roles of PbO as suggested from the previous works, role of PbO as network modifiers needs to be considered. Addition of Bi2O3 to binary glasses resulted in the rapid decrease in the amount of non-bridging oxygens as well as in values of FWHM (Full Width at the Half Maximum intensity). It is believed that Bi2O3 form distorted BiO6 octahedra and therefore, work as intermediates. Infrared spectra also suggested that Ga2O3 behave as network-formers in the form of GaO4- tetrahedra.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.935-941
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• 2006

In this paper, the dielectric and piezoelectric properties of $0.4Pb(Ni_{1/3}Nb_{2/3})O_3+0.6Pb(Zr_{405}Ti_{595})O_3+X\;wt%\;Fe_2O_3$ ceramics were investigated with the addition of $Fe_2O_3$ and sintering temperature. Dielectric constant and piezoelectric constant increased with amount of $Fe_2O_3$ to 0.25 wt% and then decreased the further addition of $Fe_2O_3$. It seems that $Fe_2O_3$ acts as a sintering aid at the sintering temperature of $1150^{\circ}C$. By the addition of $Fe_2O_3$., sintering temperature of the system was lowered from $1250^{\circ}C\;to\;1100^{\circ}C$. The piezoelectric properties showed the maximum value of ${\varepsilon}r=4669,\;d_{33}=810(10^{-12}m/V)$, kp = 77 %, Qm = 55, in $0.4Pb(Ni_{1/3}Nb_{2/3})O_3\;-0.6Pb(Zr_{0.405}Ti_{0.595})O_3+0.25wt%\;Fe_2O_3$ ceramics having composition near the morphotropic phase boundary. The composition may be appropriate for actuator materials because of high piezoelectric constant and electromechanical coupling factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.8-11
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• 1988

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})0_3-BaTiO_3PbTiO_3(0.05{\leq}x{\leq}0.20, 0.05{\leq}y{\leq}0.15$) ternary compound ceramics were fabricated by the mixed oxide method. The dielectric properties with temperature and frequency of the specimens were investigated. Relative dielectric constants of the specimens were increased with $BaTiO_3$ contents. Increasing the $BaTiO_3$contents, the variation in the relative dielectric constant with frequency, the temperature coefficient of capacitance (TCC) and the dielectric loss were decreased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.307-314
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• 1998

PZT thin films were fabricated by the Sol-gel method. Starting materials used for the preparation of the stock solution were Pb-acetate trihydrate, Zr-normal propoxide and Ti-isopropoxide. 2-Methoxyethanol and iso-propanol were used for solution. For studying the diffusion of Pb ion into the substrates. We used bare Si substrate, $SiO_2/Si$ substrates which was produced by thermal oxidation and $TiO_2/SiO_2/Si$ which was mad by Sol-gel method. Densification and adhesion of thin films were observed by SEM. Phase formation of thin films and diffusion of Pb ion into the substrate were examined by XRD and ESCA, respectively. In the case of bare Si and $SiO_2/Si$ substrate, we obtained the perovskite phase at $700^{\circ}C$ and restricted a little the diffusion of Si ion into the film with $SiO_2$ buffer layer. In the case of $TiO_2/SiO_2/Si$, perovskite phase were obtained at $500^{\circ}C$ and the diffusion of Pb ion and Si ion were restriced.