• 한국결정성장학회지
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• 제8권4호
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• pp.667-672
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• 1998

Columbite precursor 방법을 이용하여 제조한 Pb(Mg1/3Nb2/3)O3-PbTiO3 세라믹계의 초전특성을 $1000^{\circ}C$에서 $1250^{\circ}C$의 소결온도 범위에서 관찰하였다. Pb(Mg1/3Nb2/3)O3-PbTiO3 계는 전형적인 완화형 강유전특성을 나타내었다. $1250^{\circ}C$에서 2시간 소결한 $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ 세라믹의 경우, 높은 소결밀도와 향상된 초전특성을 얻을수 있었다. $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$세라믹은 항온장치를 이용할 경우 초전 센서로의 응용가능성을 나타내었다.

• 한국세라믹학회지
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• 제35권9호
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• pp.905-910
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• 1998

• 한국세라믹학회지
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• 제22권2호
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• pp.17-24
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• 1985

In the composition of $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ the effect of particle size on PbO vaporization were measured, . The initial step of discontinuous vaporization of unreated PbO during the calcining process was depended on the particle size. All additives $La_2O_3Nb_2O_5$ and $Al_2O_3$ inhibited the grain growth of the composition $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ +2wt% excess PbO. The dielectric and piezoelectric properties of the composition $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ were improved by the addition of 2wt% excess PbO and proper additive. The electromechanical planar coupling factor of 0.65 and mechnical quality factor of 390 could be obtained by adding 5wt% $Nb_2O_5$ to the composition 2wt% excess PbO+$Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$.

• 한국세라믹학회지
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• 제24권3호
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• pp.263-269
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• 1987

It is investigated that the determination of the correlation between the change of microstructure and electrical properties. Yttria is added to the compositiojn of rhombohedral region in Pb(Mg1/3Nb2./3)O3-PbTiO3-PbZrO3 ternary system. Average grian size, lattice parameters and distribution of yttrium are characterized by XRD, SEM and EDS. Electrical properties are determined by measurement of Curie temperature, piezoelectric properties and hysteresis loops. The results are as follows; 1. Both lattice parameters, a and ${\alpha}$, are changed by addition of yttria to the composition of rhomboheadral region in Pb(Mg1/3Nb2./3)O3-PbTiO3-PbZrO3 ternary system and Curie temperature is proportional to the values at (90-${\alpha}$).

• 한국세라믹학회지
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• 제11권3호
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• pp.19-26
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• 1974

Mechanical properties of the system PbO-B2O3-V2O5 low melting glass during crystallization by heat-treatment were investigated. Wettability of the system PbO-B2O3-V2O5 was excellent and appropriate for commercial sealing as a low melting solder glass. Crystals, during heat-treated at 30$0^{\circ}C$ of the system PbO-B2O3-V2O5 were $\beta$-4PbO.B2O3, 5PbO.4B2O3, and Pb2V2O7 mainly. The percent of crystallinity was 82$\pm$5%. Mechanical properties of the system PbO-B2O3-V2O5 were influenced not only by the differences of density and coefficient of thermal expansion and the stress induced from the difference in the density and coefficient of thermal expansion between glass phase and crystals but also crystallization conditions.

• 자원리싸이클링
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• 제21권5호
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• pp.65-71
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• 2012

용융 PbO-$SiO_2$계 슬래그와 Bi를 $775{\sim}850^{\circ}C$의 마그네시아 도가니 중에서 평형시켜 Pb와 Bi의 평형분배에 대하여 조사하였다. 분위기 중의 산소분압은 $P_{CO2}/P_{CO}$의 비율을 조정하여 제어하였다. Pb의 분배비인 (%PbO)/[%Pb]는 슬래그 중의 $SiO_2$ 농도가 증가함에 따라 증가하였으며, Bi의 분배비인 ($%Bi_2O_3$)/[%Bi]는 슬래그 중의 $SiO_2$ 농도가 증가함에 따라 감소하였다. 그리고 반응 온도가 높을수록 금속 상중의 Pb 농도는 증가하였다. 이러한 결과는 열역학적으로 예측한 결과와 잘 일치하였다.

• 한국세라믹학회지
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• 제30권6호
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• pp.510-516
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• 1993

$PbTiO_3$ thin films have been formed by rapid thermal annealing(RTA) of $TiO_2$/Pb/$TiO_2$ multilayer films deposited on Si wafers by RF sputtering. Based on the optimal depositon conditions of TiO2 and Pb, $TiO_2$/Pb/$TiO_2$ three layers were deposited for 900$\AA$ each. These films were subjected to RTA process at the temperatures ranging from $400^{\circ}C$ to $900^{\circ}C$ for 30 seconds in air, and were analyzed by X-ray diffraction and transmission electron microscopy to investigate the phases and the microstructures. As a result, perovskite $PbTiO_3$ phases was obtained above $500^{\circ}C$ with the trace of unreacted $TiO_2$. RBS analysis revealed the anisotropic behavior of diffusion that the diffusivity of Pb to the bottom $TiO_2$ layer was faster than that of Pb to the top $TiO_2$ layer. The amorphous Pb-silicate was formed between film and Si substrate due to the diffusion of Pb, but Pb-silicate existed locally at the interface and the amount of that phase was very small. Therefore the effect of bottom $TiO_2$ layer as a diffusion barrier was confirmed. $PbTiO_3$ films formed by current technique showed a relative dielectric constant of 60, and the maximum breakdown field reached 170kV/cm.

• 한국세라믹학회지
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• 제42권2호
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• pp.104-109
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• 2005

PbO 완충층의 역할을 확인하기 위해, r.f. magnetron sputtering법을 이용하여 p-type (100) Si 기판 위에 $Pt/Pb_{1.1}Zr_{0.53}Ti_{0.47}O_{3}$와 PbO target으로 Pt/PZT/PbO/Si의 MFIS 구조를 제조하였다. MFIS 구조에 완충층으로 PbO를 삽입함으로써 PZT 박막의 결정성이 크게 향상되었고, 박막의 공정온도도 상당히 낮출 수 있었다. 그리고 XPS depth profile 분석 결과, PbO 증착시 기판온도가 PbO와 Si의 계면에서 Pb의 확산에 미치는 영향을 확인하였다. PbO 완충층을 삽입한 MFIS는 높은 메모리 윈도우와 낮은 누설전류 밀도를 가지는 추수한 전기적 특성을 나타내었다. 특히, 기판온도 $300^{\circ}C$에서 증착된 PbO를 삽입한 Pt/PZT(200nm, $400^{\circ}C)PbO(80nm)/Si$는 9V의 인가전압에서 2.OV의 가장 높은 메모리 윈도우 값을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.341-344
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• 2004

The superconducting properties of $YBa_2Cu_3O_x$ with different content impurities of PbO and $BaPbO_3$ were studied. When the PbO was used as an additive in $YBa_2Cu_3O_x$, although the melting point could be reduced, the superconductivity became poor. From the XRD pattern of the sintered mixture of $YBa_2Cu_3O_x$ and PbO it was known that there is a reaction between $YBa_2Cu_3O_x$ and PbO, and the product is $BaPbO_3$. In the process of the reaction the superconducting phase of $YBa_2Cu_3O_x$ was decreased and $BaPbO_3$ would be the main phase in the sample. Therefore, $BaPbO_3$ was chosen as the impurity additive for the comparative study. The single phase of $BaPbO_3$ was synthesized by the simple way from both mixtures of $BaCO_3$ and PbO, $BaCO_3$ and $PbO_2$. Different contents of $BaPbO_3$ (10%, 20%, 30%) were added in the $YBa_2Cu_3O_x$. By the Phase analysis in the XRD patterns it was proved that there was no reaction between $YBa_2Cu_3O_x$ and $BaPbO_3$. When $BaPbO_3$ was used as impurity in $YBa_2Cu_3O_x$ the superconductivity was much better than PbO as an impurity additive in $YBa_2Cu_3O_x$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.297-299
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• 1999

Effects of additives on the ceramic and electrical properties of Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$ceramics in a perovskite type structure were investigated. The dielectric and piezoelectric properties of the base composition were improved markedly through selection of Fe$_2$O$_3$ additives in proper amounts. The composition Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$ obtained the dielectric constant ($\varepsilon$$_{r}$=1,425). Also, electromechanical couping factors for planar(k$_{p}$) and piezoelectric constant(d$_{33}$) were obtained 0.50 and 294[pC/N] at the additives 0wt% Fe$_2$O$_3$ respectively. The mechanical quality facor(Q$_{m}$) of Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$+Fe$_2$O$_3$(0.3 wt%) is about 510.510.510.