• Title/Summary/Keyword: Patterned spacer

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The Analysis of Gravity Mura Induced in Patterned Spacer Color Filter on Large Size LCD (대 면적 LCD에서 Patterned Spacer Color Filter 사용 시 발생하는 중력무라 분석)

  • Choi, S.;Jeong, Y.H.;Kim, M.S.;Kim, G.H.;Kim, H.Y.;Kim, S.Y.;Lim, Y.G.
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.8
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    • pp.871-874
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    • 2004
  • In recent, it is said that the trend of LCD is direction to pursue high qualities like as high transmittance, high contrast ratio, wide viewing angle, fast response time, and so on. Especially, it is known that these qualities are essential to large size LCD like as LCD TV and we can realize them through to uniform cell gap and deep black state. Until now, the ball spacer has been used to control of uniform cell gap. However, the existence of ball spacer inside the cell causes the deformation of the liquid crystal molecules and damage to alignment layer. Such a deformation of the liquid crystal causes light-leakage in the dark state, which lowers contrast ratio of the display. Nowadays, this problem has been solved by using Patterned Spacer on Color Filter. but Side Effect just as gravity mura has been induced. In this paper, we studied the mechanism on gravity mura in case of using patterned spacer on color filter.

Adhesive bonding using thick polymer film of SU-8 photoresist for wafer level package

  • Na, Kyoung-Hwan;Kim, Ill-Hwan;Lee, Eun-Sung;Kim, Hyeon-Cheol;Chun, Kuk-Jin
    • Journal of Sensor Science and Technology
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    • v.16 no.5
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    • pp.325-330
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    • 2007
  • For the application to optic devices, wafer level package including spacer with particular thickness according to optical design could be required. In these cases, the uniformity of spacer thickness is important for bonding strength and optical performance. Packaging process has to be performed at low temperature in order to prevent damage to devices fabricated before packaging. And if photosensitive material is used as spacer layer, size and shape of pattern and thickness of spacer can be easily controlled. This paper presents polymer bonding using thick, uniform and patterned spacing layer of SU-8 2100 photoresist for wafer level package. SU-8, negative photoresist, can be coated uniformly by spin coater and it is cured at $95^{\circ}C$ and bonded well near the temperature. It can be bonded to silicon well, patterned with high aspect ratio and easy to form thick layer due to its high viscosity. It is also mechanically strong, chemically resistive and thermally stable. But adhesion of SU-8 to glass is poor, and in the case of forming thick layer, SU-8 layer leans from the perpendicular due to imbalance to gravity. To solve leaning problem, the wafer rotating system was introduced. Imbalance to gravity of thick layer was cancelled out through rotating wafer during curing time. And depositing additional layer of gold onto glass could improve adhesion strength of SU-8 to glass. Conclusively, we established the coating condition for forming patterned SU-8 layer with $400{\mu}m$ of thickness and 3.25 % of uniformity through single coating. Also we improved tensile strength from hundreds kPa to maximum 9.43 MPa through depositing gold layer onto glass substrate.

Substrate-Assembling Technique using Adhesive Patterned Spacers for Flexible Liquid Crystal Displays

  • Kang, Jae-Hyun;Bae, Kwang-Soo;Yi, Seung-Woo;Kim, Jae-Hoon;Yu, Chang-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.218-220
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    • 2009
  • We proposed an enhanced substrate-assembling technique using adhesive patterned spacers for flexible liquid crystal displays (LCDs). The negative photoresister was used for the rigid columnar spacers and the strong substrate-bonding agent. The proposed technique is expected to be a good candidate for manufacturing method of flexible LCDs.

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Investigation on Suppression of Nickel-Silicide Formation By Fluorocarbon Reactive Ion Etch (RIE) and Plasma-Enhanced Deposition

  • Kim, Hyun Woo;Sun, Min-Chul;Lee, Jung Han;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.1
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    • pp.22-27
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    • 2013
  • Detailed study on how the plasma process during the sidewall spacer formation suppresses the formation of silicide is done. In non-patterned wafer test, it is found that both fluorocarbon reactive ion etch (RIE) and TEOS plasma-enhanced deposition processes modify the Si surface so that the silicide reaction is chemically inhibited or suppressed. In order to investigate the cause of the chemical modification, we analyze the elements on the silicon surface through Auger Electron Spectroscopy (AES). From the AES result, it is found that the carbon induces chemical modification which blocks the reaction between silicon and nickel. Thus, protecting the surface from the carbon-containing plasma process prior to nickel deposition appears critical in successful silicide formation.