• Journal of the Korean Ceramic Society
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• v.43 no.12 s.295
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• pp.798-804
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• 2006

Co-planar type single chamber solid oxide fuel cell with patterned electrode on a surface of electrolyte has been fabricated by robo-dispensing method and microfluidic lithography. The cells were composed of NiO-GDC-Pd or NiO-SDC cermet anode, $(La_{0.7}Sr_{0.3})_{0.95}MnO_3$ cathode, and yttria stablized zirconia electrolyte. The cell performance at $900^{\circ}C$ was investigated as a function of electrode geometries, such as anode-to-cathode distance, numbers of electrode pairs. Relationship between OCV and I-V characteristics at the optimized operation condition was also studied by DC source meter under the mixed gas condition of methane, air, and nitrogen. An increase of anode-facing-cathode area leads to lower OCV due to intermixing between product gases of anode and cathode, which in turn decreases the oxygen partial pressure difference.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.907-912
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• 2005

Micro-patterns of $Pb(Zr_{0.53}Ti_{0.47})O_3$, PZT, thin films with a MPB composition were deposited on $Pt/Ti/SiO_2/Si$ substrate from molecular-designed PZT precursor solution by using self-assembledmonolayer(SAM) as a template. This method includes deposition of SAM followed by the optical etching by exposing the SAM to the UV-light, leading to the patterned SAM as a selective deposition template. The pattern of SAM was formed by irradiating UV-light to the SAM on a substrate and/or patterned PZT thin film through a metal mask for the selective deposition of patterned PZT or lanthanum nickel oxide (LNO) precursor films from alkoxide-based precursor solutions. As a result, patterned ferroelectric PZT and PZT/LNO thin film capacitors with good electrical properties in micrometer size could be successfully deposited.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.568-570
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• 2009

Octadecyltrichlorosilane (OTS) self-assembled monolayer was selectively patterned by deep ultraviolet exposure, resulting in differential surface state, hydrophilic area with OTS hydrophobic surroundings. High-resolution (<10 ${\mu}m$) nanoparticulate Ag electrodes and organic semiconductors were patterned from simple dip-casting and ink-jetting on the pre-patterned hydrophilic surface, forming all solution-processed organic thin film transistors. The devices typically have shown a mobility of 0.065 $cm^2/V{\cdot}s$ and on-off current ratio of $8{\times}10^5$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.640-643
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• 2008

In this work, a novel tunable MIM capacitor with the meshed electrode is proposed first in order to improve the tunability characteristics using fringe fields. The capacitors were fabricated on a low-resistivity Si substrate employing lead zinc niobate (PZN) thin film dielectric. The fabricated capacitor with the meshed electrode, whose line width and spacing was $2.5{\mu}m$, achieved the effective capacitance tunability of 31 % that is higher value of 18.5 % than that of the conventional capacitor with the rectangular-type electrode.

• Journal of Information Display
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• v.8 no.3
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• pp.17-21
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• 2007

We introduce a new electrode structure for the patterned vertical alignment (PVA) mode, which has a lower color-shift at large viewing angle than the one-domain VA mode. By manipulating the period of electrode structure, we can make more multi-domains and use the existing fabrication processes without having to use additional materials.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.821-825
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• 2004

The a-Si：H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si：H TFTs is inverted staggered. The gate electrode is formed by patterning with length of 8 ${\mu}m∼16 ${\mu}m. and width of 80∼200 ${\mu}m after depositing with gate electrode (Cr) 1500 under coming 7059 glass substrate. We have fabricated a-SiN：H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN：H (2000 ), a-Si：H(2000 ) and n+a-Si：H (500). We have deposited n+a-Si：H ,NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si：H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si：H TFTs decreasing parasitic capacitance of source-drain has channel length of 8 ~20 ${\mu}m and channel width of 80∼200 ${\mu}m. And it shows drain current of 8 ${\mu}A at 20 gate voltages, Ion/Ioff ratio of 108 and Vth of 4 volts.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.196-202
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• 2004

A numerical simulation based on the finite element method is used to investigate the effect of a reciprocal paddle on the uniformity of deposition rates at a patterned electrode. The calculated deposition rates agreed well with the measured values. The influences of the paddle velocity, the gap between cathodes and paddles, anode size and the distance between the anode and cathode have been studied. The optimum conditions on the paddle and geometric factors for electrodeposit uniformity could be obtained.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.499-501
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• 2007

We propose a vertical-alignment liquid crystal display with patterned electrodes using a positive dielectric anisotropic liquid crystal. In this structure, the threshold and on-state voltages are reduced compared with previous vertical-alignment configuration with positive liquid crystal.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.100-101
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• 2007

Polymer thick film capacitors were successfully fabricated by using ink-jet printing and screen printing technology. First, a bottom electrode was patterned by ink-jet printing of a nano-sized silver ink. Next, a dielectric layer was formed by the screen printing, then a top electrode was pattern by ink-jet printing of a nano-sized silver ink. The printed area of the dielectric layers were changed into $2{\times}2m^2$and $4{\times}2m^2$, and also the area of the electrodes were patterned with $1{\times}1mm^2$ and $1{\times}3mm^2$. The thickness of the printed dielectric layer was ranged from 1.1 to $1.4{\mu}m$. The analysis of capacitances verified that the capacitances was proportional to the area of the printed electrode. The capacitances of the fabricated capacitors resulted in one third of the calculated capacitances.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.471-474
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• 2004

We investigated field emission (FE) characteristics of multi-walled carbon nanotubes (CNTs) grown on all over patterned cathode electrode lines (CL pattern) and grown on along the central areas of the cathode lines(CL pattern). The CNTs grown on the SL pattern showed a lower threshold voltage and higher emission current than those on the CL pattern, due to the concentration of electric fields at the edges of the cathode lines. For the SL-patterned CNTs, however, the FE gradually spread out to the neighbors with time, and was instantly extinguished in some area and then slowly resumed again. Such areal- spread FE did not occur for the CL-patterned sample, leading to the stable FE together with the instant turn-on capability. It is suggested that the spread FE and instability for the SL-patterned CNTs may be related to the electrical charging on the insulator surface around the cathode line edges.