• 한국정보통신학회논문지
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• 제11권9호
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• pp.1724-1728
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• 2007

본 논문에서는 PVA(Patterned Vertical Alignment)액정 셀의 광투과율 향상을 위한 새로운 전극 구조를 제안하였다. 제안한 전극 구조의 액정 디렉터의 분포 및 광투과율 계산은 상용 시뮬레이터인 'TechWiz LCD'를 사용하였다. 광 시야각을 위한 전극구조에 의해 투과율 감소를 발생시키는 부분에 대해 연구하여 그 부분의 액정 디렉터 분포를 변화시킬 수 있는 구조를 제안하였다. 그리고 기존 PVA모드와 제안한 구조를 사용한 PVA모드의 광투과율을 계산하여 비교하였다. 그 결과로부터 제안한 PVA액정 셀의 광투과율이 높아짐을 확인할 수 있었다.

• 한국정보통신학회논문지
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• 제11권2호
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• pp.344-348
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• 2007

본 논문에서 높은 투과율을 가질 수 있는 PVA (Patterned Vertical Aligned) 액정 셀의 전극 구조를 제안하였다. 제안한 전극 구조의 결과를 확인하기 위해서 광학적 특성과 그리고 디렉터 모양의 계산은 'TechWiz LCD'라는 상용 시뮬레이터를 사용하였다. 보통 PVA 액정 셀의 투과율은 전극의 모양과 셀갭에 의해 크게 영향을 받는다. 본 논문에서 제안한 전극 구조의 게이트 라인과 데이터 라인 사이의 거리는 기존의 PVA 셀과 같다. 대신 전극의 끝단 (edge) 지역에서의 광손실을 줄이기 위하여 상층부 전극과 하층부 전극의 모양을 수정하였다. 결과를 비교하기 위하여 기존의 PVA 액정 셀과 제안한 PVA 액정 셀의 투과율을 비교하였다. 그 결과, 제안된 구조에 의해서 전극부근에서 발생하는 광학적 손실이 감소되는 것을 확인 할 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.481-484
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• 2008

In order to reduce IR drop through common electrode in AMOLED, we propose a novel method to form electrical contact between highly-conductive bus lines and common electrode by using a plasma-assisted patterning of OLED layers and double deposition of the common electrode. Plasma-assisted patterning effects on OLED performance and degradation have been investigated. This patterning method caused turn-on voltage decrease, current flow increase at the same applied OLED voltages, quantum efficiency decrease, and rapid degradation at early stage during the lifetime test. However, comparable 70% luminance lifetime were obtained for both patterned and non-patterned OLEDs.

• Journal of information and communication convergence engineering
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• 제5권1호
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• pp.42-44
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• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2007년도 추계학술대회논문집
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• pp.718-721
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• 2007

The ionic-polymer-metal-composite actuators have the best merit for bio-mimetic locomotion because of their large bending performance. Especially, they have the advantage for mimicking a fish-like motion because IPMCs are useful to be actuated in water. So we have developed IPMC actuators with multiple electrodes for realization of biomimetic motion. This actuator is fabricated by combining electroless plating and electroplating techniques capable of patterning precisely and controlling a thickness of Pt electrode layer. The FRF analysis was conducted by a mechanical shaker and direct electrical excitation which is based on sweep sine wave function. From this result, the proper young‘s modulus of Platinum was investigated and applied on expecting the vibration characteristics of patterned IPMC actuator. The calculated maximum displacement of the patterned IPMC was 2.32mm under an applied 4mN/mm. The natural frequency was increased however displacement was decreased in according to increase a thickness of Pt.

• 한국정밀공학회지
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• 제27권9호
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• pp.11-15
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• 2010

In this study, to fabricate a low-resistance and high optical transparency electrode film, the following steps were performed: the design and manufacture of electroforming stamp, the fabrication of a thermal roll-imprinted polycarbonate (PC) patterned films, the filled low-resistance Ag paste using doctor blade process on patterned PC films and spin coating by conductive polymers. As a result of PC films imprinted line width of $26.69{\pm}2\;{\mu}m$, channel length of $247.57{\pm}2\;{\mu}m$, and pattern depth of $7.54{\pm}0.2\;{\mu}m$. Ag paste to fill part of the patterned film with conductive polymer coating and then the following parameters were obtained: a sheet resistance of $11.1\;{\Omega}/sq$ optical transparency values at a wavelength of 550 nm was 80.31 %.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.549-552
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• 2007

Patterned vertical alignment (PVA) mode requires multi-domain to exhibit wide viewing angle whereas the transmittance is sacrificed. To overcome the demerit, a fine pattern was formed at folded region in PVA Z-shape electrode structure. In the present work fine patterns were formed near domain boundary regions where the unwanted field direction which causes the LC to tilt down in unwanted direction exists. Thereby transmittance is improved near those fine patterns. This method is very simple and more cost-effective process than the other methods. In this article, we show the method of fine pattern formation and its influence on LC molecule in PVA mode with Z-shape electrode structure.

• Journal of Electrical Engineering and Technology
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• 제4권4호
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• pp.546-551
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• 2009

In this paper, we describe a self-aligned fabrication method for a nano-patterned bottom electrode using flood exposure from the backside. Misalignments between layers could cause the final devices to fail after the fabrication of the nano-scale bottom electrodes. A self-alignment was exploited to embed the bottom electrode inside the glass substrate. Aluminum patterns act as a dry etching mask to fabricate glass trenches as well as a self-aligned photomask during the flood exposure from the backside. The patterned photoresist (PR) has a negative sidewall slope using the flood exposure. The sidewall slopes of the glass trench and the patterned PR were $54.00^{\circ}$ and $63.47^{\circ}$, respectively. The negative sidewall enables an embedment of a gold layer inside $0.7{\mu}m$ wide glass trenches. Gold residues on the trench edges were removed by the additional flood exposure with wet etching. The sidewall slopes of the patterned PR are related to the slopes of the glass trenches. Nano-scale bottom electrodes inside the glass trenches will be used in beam resonators operating at high resonant frequencies.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.51-51
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• 1999

• 한국생산제조학회지
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• 제24권1호
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• pp.94-97
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• 2015

In this study, we introduce a yellowing phenomenon in silver nanowire laser patterning and attempt to understand the cause of this phenomenon. Silver nanowire is a promising alternative to indium tin oxide as a transparent electrode owing to its flexibility. Additionally, silver nanowire can be easily patterned by laser ablation, which is free of dangerous chemicals. However, a yellowish color change reducing visibility is observed on the patterned area of the silver nanowires, and this yellowing phenomenon prevents the use of silver nanowire as a transparent electrode material. We concluded that resolidified debris of melted and evaporated silver nanowires after laser ablation causes the color change of the electrode. Further research is needed to determine a means of mitigating this yellowing phenomenon.