• Journal of Welding and Joining
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• v.23 no.6
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• pp.49-54
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• 2005

Inner Structured and Bonded(ISB) panel, a kind of metallic sandwich panel, consists of two thin skin plates bonded to a micro-patterned inner structure. Its overall thickness is $1\~3mm$and it has attractive properties such as ultra-lightweight, high efficiency in stiffness-to-weight and strength-to-weight ratio. In many previous studies, resistance welding, brazing and adhesive bonding are studied for joining the panel. However these methods did not consider productivity, but focused on structural characteristics of joined panels, so that the joining process is very complicated and expensive. In this paper, a new joining process with resistance welding is developed. Curved surface electrodes are used to consider the productivity and the stopper is used between electrodes during welding time to maintain the shape of inner structure. Welding time, gap of electrodes and distance between welding points are selected as the process parameters. By measuring the tensile load with respect to the variation of welding time and gap of electrodes, proper welding conditions are studied. Welding time is proper between 1.5-2.5cycle. If welding time is too long, then inner structures are damaged by overheating. Gap of electrode should be shorter than threshold value fur joint strength, when total thickness of inner structure and skin plate is 3.3mm, the threshold distance is 3.0mm.

• Korean Journal of Optics and Photonics
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• v.33 no.1
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• pp.28-34
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• 2022

We study through computational simulation the focal performance of an infrared (IR) Fresnel lens, composed of a multilayer-graphene zone plate formed under a graphene electrode. Here the Fermi level E_F of the patterned multilayer graphene is adjusted by the overlying graphene electrode. The Fresnel lens effect, with respect to the reflectance contrast between the graphene electrode and the 8-layer graphene zone plate placed on a glass substrate, has been analyzed over a broad wavelength range from 4 to 30 ㎛. As the optimal wavelength of 8 ㎛ (considering the reflectance and the reflectance-contrast ratio) is incident upon the Fresnel lens with a focal length of 240 ㎛, the focal intensity is enhanced by a factor of 4.3 as the E_F of multilayer graphene increases from 0.4 eV to 1.6 eV, and is improved by a factor of 5.8 as the number of graphene layers increases from two to eight. As a result, an all-graphene-based IR Fresnel zone-plate lens, exhibiting multifocal function (240 ㎛ and 360 ㎛) according to the selected E_F, is proposed as an ultrathin lens platform.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1511-1513
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• 2005

The polymer-light emtting diodes(PLEDs) were comprised a design of OLED array, process develop by using ITO thin glass, and fabrication of PDMS stamp by using nanocontact printing. In the study, we describe a different approach for building OLEDs, which is based on physical lamination of thin metal electrodes supported by a PDMS stamp layer against an electroluminescent organic. We develop that devices fabricated in this manner have better performance than those constructed with standard processing techniques. The lamination approach avoids forms of disruption that can be introduced at the electrode organic interface by metal evaporation and has a reduced sensitivity to pinhole or partial pinhole defects. Also, it is easy to build patterned PLED with feature sizes into the nanometer regime. This method provides a new route to PLED for applications ranging from high performance displays to storage and lithography systems, and PLED can used for organic electronics and flexible display.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.131-132
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• 2008

We describe a fabrication method of submicron glass trenches which have embedded metal lines for the future application of nano-scale RF MEMS devices. The glass wafer was etched using two different conditions to identify the relationship between the slope of glass trenches and the slope of photroresist. A self-aligned metal photomask and negative photroresist (PR) slope were used to insert metal lines inside the glass trenches. The PR slope patterned by backside photolithography was affected by the profile of preformed glass trenches. Gold was well fabricated in the $0.7{\mu}m$ wide trench thanks to the negative PR slope. Nano-scale glass trenches with embedded metal lines can be used as a bottom electrode in submicron beam resonators operating with a high resonant frequency.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1552-1555
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• 2005

We have studied the inkjet patterning of synthesized aqueous silver nano-sol on interface-controlled ITO glass substrate. Furthermore, we designed the conductive ink for direct inkjet patterning on bare ITO glass substrate. The first, the highly concentrated polymeric dispersant-assisted silver nano sol was prepared by variation of molecular weight and control of initial nucleation and growth of silver nanoparticles. The high concentration of batch-synthesized silver nano sol was possible to 40 wt%. At the same time the particle size of silver nanoparticles was below $10{\sim}20nm$. The second, the synthesized silver nano sol was inkjet - patterned on ITO glass substrate. The connectivity and width of fine line depended largely on the wettability of silver nano sol on ITO glass substrate, which was controlled by surfactant. The relationship was understood by wetting angle. The fine line of silver electrode as fine as $50{\sim}100\;{\mu}m$ was successfully formed on ITO glass substrate. The last, the direct inkjet-patternable silver nano sol on bare ITO glass substrate was designed also.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.49-52
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• 2009

We have investigated the effect of the surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of ITO thin films, we have processed photolithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the ITO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the ITO thin films. Device structure was ITO/$\alpha$-NPD/DPVB/Alq3/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer (minolta CS-1000A). The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.3
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• pp.334-338
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• 2012

Electrical isolation of Ag nanowire, which is one of the candidates as electrode for display devices, on polymer with femtosecond pulse laser has been investigated. Line patterning to Ag nanowire with various pulse energy and scan speed were experimented. Duo to the results of the line patterning experiment, we fabricated the isolated squares and measured electrical resistance. The profile of the selectively ablated area was analyzed with AFM(Atomic Force Microscope). The width of the patterned line was $1.8\;{\mu}m$ and the depth was $1.6\;{\mu}m$. We demonstrated electrical isolation of the Ag nanowire using femtosecond laser by evaluating the electrical resistance of the sample between isolated and opened area.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.341.1-341.1
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• 2014

In the advanced material for the next generation display device, transparent amorphous oxide semiconductors (TAOS) are promising materials as a channel layer in thin film transistor (TFT). The TAOS have many advantages for large-area application compared with hydrogenated amorphous silicon TFT (a-Si:H) and organic semiconductor TFT. For the reasonable characteristics of TAOS, The a-IGZO has the excellent performances such as low temperature fabrication (R.T~), high mobility, visible region transparent, and reasonable on-off ratio. In this study, we investigated how the electric characteristics and physical properties are changed as various oxygen ratio when magnetron sputtering. we analysis a-IGZO film by AFM, EDS and I-V measurement. decreasing the oxygen ratio, the threshold voltage is shifted negatively and mobility is increasing. Through this correlation, we confirm the effect of oxygen ratio. We fabricated the bottom-gate a-IGZO TFTs. The gate insulator, SiO2 film was grown on heavily doped silicon wafer by thermal oxidation method. a-IGZO channel layer was deposited by RF magnetron sputtering. and the annealing condition is $350^{\circ}C$. Electrode were patterned Al deposition through a shadow mask(160/1000 um).

• Journal of Information Display
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• v.10 no.4
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• pp.175-179
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• 2009

As the physical properties of nematic liquid crystals vary with respect to temperature, the performances of liquid crystal displays (LCDs) are highly dependent on temperature. Additionally, it is well known that the electro-optic characteristics of LCDs, such as transmittance and threshold voltage, also rely on the LCD switching modes. The temperature dependence of the electro-optic characteristics of the wide-viewing-angle LCD modes, such as in-plane switching (IPS), multidomain vertical alignment by patterned electrode (PVA), and fringe-field switching (FFS), have been studied, and the results showed that the FFS mode has lower temperature dependence compared to the IPS and PVA modes. Since the liquid crystal (LC) reorients in different ways in each mode, this result is associated with the temperature dependence of LC's bend and twist elastic constants, and also with the position of the main reorientation, either in the middle or on the surface of the LC layer.