• Korean Journal of Optics and Photonics
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• v.20 no.5
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• pp.281-287
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• 2009

The optical anisotropy of rubbed PI(polyimide) film on patterned LCD glass substrate is analyzed using polarimetry. The direction of the optic axis and the magnitude of the very small retardation ($\sim$ 0.4 nm or less) is precisely measured by using a transmission ellipsometer. The variation of the optical anisotropy is presented as the curve of the optic axis versus the magnitude of the phase retardation and it is explained by using a simple optical model.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1774-1777
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• 2007

Ultra-fine Ag line was automatically patterned to the extent of 10 ${\mu}m$ in width by slit coating on the $10^4$ $mm^2$ glass, which was pre-patterned as hydrophobic and hydrophilic zone by using hydrophobic material. The resistivity of Ag film was about $4{\mu}\;{\Omega}{\cdot}cm$.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1656-1659
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• 2008

The reflective type color filter for the liquid crystal displays (LCD) was produced using cholesteric liquid crystal monomers whose phase is characterized by the unique optical features of selective reflection. Periodic micrometer scale hemi-spherical photoresist (PR) patterns were formed on glass substrates by thermal reflow method after photolithography. Cholesteric color filter films for red, green and blue light reflections were then produced and the viewing angle dependence was investigated and compared with that of reflected light on the non-patterned substrates.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.913-918
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• 2005

It is expected that the inkjet technology offers prospect for reliable and low cost manufacturing of FPD (Flat Panel Display). This inkjet technology also offers a more simplified manufacturing process for various part of the FPD than conventional process. For example, recently the novel manufacturing processes of color filter (C/F) in LCD, or RGB patterning in OLED by inkjet printing method have been developed. This elaborates will be considered as the precious point of manufacturing process for the mass production of enlarged-display panel with a low price. On this point of view, we would like to review the status of inkjet technology in FPD, with some results on forming micro line by inkjet patterning of suspension type silver nano ink as below. We have studied the inkjet patterning of synthesized aqueous silver nano-sol on interface-controlled ITO glass substrate. Furthermore, we designed the conductive ink for direct inkjet patterning on bare ITO glass substrate. The first, the highly concentrated polymeric dispersant-assisted silver nano sol was prepared. The high concentration of batch-synthesized silver nano sol was possible to 40 wt%. At the same time the particle size of silver nanoparticles was below $10{\sim}20nm$. The second, the synthesized silver nano sol was inkjet - patterned on ITO glass substrate. The connectivity and width of fine line depended largely on the wettability of silver nano sol on ITO glass substrate, which was controlled by surfactant. The relationship was understood by wetting angle. The line of silver electrode as fine as $50{\sim}100\;{\mu}m$ was successfully formed on ITO glass substrate. The last, the direct inkjet-patternable silver nano sol on bare ITO glass substrate was designed also.

• Polymer(Korea)
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• v.31 no.2
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• pp.148-152
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• 2007

The prototype of color fitters for the liquid crystal displays (LCD) using cholesteric liquid crystal monomers was produced. Cholesteric liquid crystal is characterized by the unique optical features of selective reflection, which is due to the helical twisting structures of LCs comparable to the wavelength of the incident light under certain conditions of substrate treatment. In the results of the experiment, cholesteric films for red, green, and blue light reflections respectively were produced and the viewing angle dependence of these films were investigated. Reflective light of red and green films shifted to shorter wavelength regions as viewing angle becomes greater, but blue one shifted very little. Periodic micrometer-sized half-spherical photoresist formed by thermal reflow method after photo-lithography was patterned on glass substrates. The viewing angle dependence of reflective light colors of red, green, and blue films on the patterned substrates compared with those on no patterned substrates was investigated. We could confirm the dependences were much smaller on the patterned substrates by bare eyes and Lab-color coordination methods qualitatively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.391-396
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• 2013

Recently, microcavity is studied to reduce the optical loss of BLU and OLED. In this paper, we suggest applying microcavity to photo-luminescent lamp with plasma discharge technology to meet the display applications for a BLU for LCD. The structure of photo-luminescent lamp consists of SUS foil and ITO glass with microcavity. The opto-electric characteristics of photo-luminescent lamp with microcavity was evaluated. The brightness of photo-luminescent device was increased over $111cd/m^2$ with the adaptation of patterned microcavity at $30{\mu}m$. The 3D optical simulation verified the enhanced light outcoupling when microcavity applied to the device.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.459-459
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• 2012

Recently, the discharge of global warming gases in dry etching process of TFT-LCD display industry is a serious issue because perfluorocarbon compound (PFC) gas causes global warming effects. PFCs including CF4, C2F6, C3F8, CHF3, NF3 and SF6 are widely used as etching and cleaning gases. In particular, the SF6 gas is chemically stable compounds. However, these gases have large global warming potential (GWP100 = 24,900) and lifetime (3,200). In this work, we chose C3F6O gas which has a very low GWP (GWP100 = <100) and lifetime (< 1) as a replacement gas. This study investigated the effects of the gas flow ratio of C3F6O/O2 and process pressure in dual-frequency capacitively coupled plasma (CCP) etcher on global warming effects. Also, we compared global warming effects of C3F6O gas with those of SF6 gas during dry etching of a patterned positive type photo-resist/silicon nitride/glass substrate. The etch rate measurements and emission of by-products were analyzed by scanning electron Microscopy (SEM; HITACI, S-3500H) and Fourier transform infrared spectroscopy (FT-IR; MIDAC, I2000), respectively. Calculation of MMTCE (million metric ton carbon equivalents) based on the emitted by-products were performed during etching by controlling various process parameters. The evaluation procedure and results will be discussed in detail.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1393-1398
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• 2009

Conventionally, etching is first considered for microelectronics fabrication process and is specially important in process of a-Si:H thin film transistor for LCD. In this paper, we stabilize properties of device by development of wet and dry etching process. The a-Si:H TFTs of this paper is inverted staggered type. The gate electrode is lower part. The gate electrode is formed by patterning with length of 8 ${\mu}$m${\sim}$16 ${\mu}$m and width of 80${\sim}$200 ${\mu}$m after depositing with gate electrode (Cr) 1500 ${\AA}$under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photo resistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN:H (2000 ${\mu}$m), a-Si:H(2000 ${\mu}$m) and n+a-Si:H (500 ${\mu}$m), We have deposited n-a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. In the fabricated TFT, the most frequent problems are over and under etching in etching process. We were able to improve properties of device by strict criterion on wet, dry etching and cleaning process.