• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.12
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• pp.139-145
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• 2008

In this paper, a microstrip surface wave antenna(SWA) with a frequency selective surface structure(FSS) is designed and measured. A microstrip SWA has many advantages such as low profile, low weight, easy fabrication, and compatibility with monolithic microwave integrated circuits(MMIC). In addition, it has demonstrated monopole like beam patterns. The microstrip SWA consists of two parts : a center-fed modified microstrip patch to excite surface wave, and a periodic patches to support the propagation of the surface waves. To obtain wide bandwidth, the ring type parasitic element is inserted and the circular patch is selected for the unit element in FSS structure. Experimental results show that the microstrip SWA has monopole like beam patterns at 5.9GHz. Impedance bandwidth and gain is 12% and 5.6dBi.

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.224-227
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• 2009

Nanofabrication is an essential process throughout industry. Technologies that produce general nanofabrication, such as e-beam lithography, dip-pen lithography, DUV lithography, immersion lithography, and laser interference lithography, have drawbacks including complicated processes, low throughput, and high costs, whereas nano-transfer printing (nTP) is inexpensive, simple, and can produce patterns on non-plane substrates and multilayer structures. In general nTP, the coherency of gold-deposited stamps is strengthened by using SAM treatment on substrates, so the gold patterns are transferred from stamps to substrates. However, it is hard to apply to transfer other metallic materials, and the existing nTP process requires a complicated surface treatment. Therefore, it is necessary to simplify the nTP technology to obtain an easy and simple method for fabricating metal patterns. In this paper, asnTP process with poly vinyl alcohol (PVA) mold was proposed without any chemical treatment. At first, a PVA mold was duplicated from the master mold. Then, a Mo layer, with a thickness of 20 nm, was deposited on the PVA mold. The Mo deposited PVA mold was put on the Si wafer substrate, and nTP process progressed. After the nTP process, the PVA mold was removed using DI water, and transferred Mo nano patterns were characterized by a Scanning electron micrograph (SEM) and Energy Dispersive spectroscopy (EDS).

• Polymer(Korea)
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• v.33 no.4
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• pp.307-312
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• 2009

The fabrication of PHBV nanofibers containing various plant polyphenols by electrospinning has been examined. It has been found that the average diameters of fibers increased by the adding of polyphenols. The resulting fibers exhibited a uniform diameter ranging from 340 to 450 nm. As the concentration of polyphenols increased, the diameter of fibers increased due to the hydrogen bonding interaction between the ester groups of PHBV and hydroxyl groups of polyphenols. The interaction between PHBV and polyphenols, which forms a complex together in solution, was verifed by UV measurement. ATR-FTIR analysis confirmed the existence of the hydrogen bonding interaction. The semicrystalline structure of the PHBV nanofiber was observed from XRD pattern. The crystallinity of PHBV nanofibers was increased by the adding of polyphenols. PHBV nanofibers containing polyphenols showed superior antimicrobial activities.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.9
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• pp.1285-1291
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• 2013

In this paper, a double circular ring monopole antenna for wideband applications is designed and fabricated. The proposed antenna is based on a planar monopole design, and composed of double circular ring of radiating patches and ground plane to obtain the wideband characteristics. To get the optimized parameters, we used the simulator, Ansoft's High Frequency Structure Simulator(HFSS) and found the parameters that effect antenna characteristics. Using the obtained parameters, the proposed antenna is fabricated. The fabricated antenna is measured at the operating frequencies, and the return loss coefficient, gain, and radiation patterns are determined. The results of measurement, -10dB impedance bandwidth, measured return loss is 4,530 MHz(2,510-7,040 MHz) and antenna peak and average gains for the frequencies are obtained 0.71~3.38 dBi, -3.85~0.3 dBi, respectively. In case of radiation patterns, the proposed antenna displays nearly omnidirectional radiation characteristics in the E-plane, and monopole-like radiation pattern characteristics in the H-plane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.110-113
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• 1992

$n^{+}$-p homojunction InP diodes were fabricated using thermal diffusion of Sulfur into p-type InP substrates(Zn doped, LEC grown, p=2.3${\times}$10$^{16}$c $m^{-3}$). The Sulfur diffusion was carried out at 550$^{\circ}C$, 600$^{\circ}C$, 700$^{\circ}C$ for 4 hours in a sealed quartz ampule(～2ml in volume) containing 5mg I $n_2$ $S_3$ and Img of red phosphorus. The formed junction depth was below 0.5$\mu\textrm{m}$. After the removal of diffused layer on the rear surface of the wafer, the beak ohmic contacts to the p-side were made with a vacuum evaporation of An-Zn(2%) followed by an annealing at 450$^{\circ}C$ for 5 minutes in flowing Ar gas. The front contacts were made with a vacuum evaporation of Au-Ge(12%) followed by an annealing at 500$^{\circ}C$ for 3 minutes in flowing Ar gas. The remarkable sprctral response of the cells obtained at the region of 6000-8000${\AA}$ region. The open circuit voltage $V_{oc}$ , short circuit current density $J_{sc}$ , fill factor and conversion efficiency η of the fabricated pattern solar cells(diffusion condition : at 700$^{\circ}C$ for 4 hours) were 0.660V, 14.04㎃/$\textrm{cm}^2$, 0.6536 and 10.09%, respectively.y.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.103-107
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• 2003

The inductively coupled plasma(ICP) etching process was selected to fabricate RF Surface Acoustic Wave(SAW) filters and a Pt thin film was sputtered on a $LiTaO_3$ substrate applied to electrode materials to reduce the spurious response and improve the power durability. Steep sidewall pattern was achieved employing $C_4F_8/Ar/Cl_2$ gas chemistry. We investigated an etching mechanism and parameter dependence of the Pt thin film about $C_4F_8$ addition. Sidewall etch angle was about $80^{\circ}$ at the $C_4F_8$ 20% mixing ratio. Fabricated SAW filter is consists of some series and parallel arm SAW resonators which work as impedance elements and show capacitance characteristics at out of the passband. It can be modified for $800{\sim}900\;MHz$ RF filters. External matching circuits were unnecessary.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.1
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• pp.39-46
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• 2013

Smart material such as SMA (Shape Memory Alloy) has been studied in various ways because it can perform continuous, flexible, and complex actuation in simple structure. Smart soft composite (SSC) was developed to achieve large deformation of smart material. In this paper, a shell actuator using woven type SSC was developed to enhance stiffness of the structure while keeping its deformation capacity. The fabricated actuator consisted of a flexible polymer and woven structure which contains SMA wires and glass fibers. The actuator showed various actuation motions by controlling a pattern of applied electricity because the SMA wires are embedded in the structure as fibers. To verify the actuation ability, we measured its maximum end-edge bending angle, twisting angle, and actuating force, which were $103^{\circ}$, $10^{\circ}$, and 0.15 N, respectively.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.201-206
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• 2005

In this work, we tried to improve the fabrication process in HVPE (Hydride Vapor Phase Epitaxy) system by using Si(111) substrate with pre-deposited Al layer. PL measurements was done for samples with and without pre-deposited Al on Si and it was also examined the dependence of the optical characteristic properties on AlN buffer thickness for GaN/AIN/Al/Si. A sample with thin Al nucleation layer on Si substrate reveals a better optical property than the other. And it suggests that the thickness for AlN buffer layer with thin Al nucleation layer on Si(111) substrate is most proper about $260{\AA}$ to grow GaN in HVPE system. The surface morphology of GaN clearly shows the hexagonal crystallization. The XRD pattern showed strong peak at GaN{0001} direction.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.86-86
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• 2010

Micro- and nanoscale texturing and control of surface energy have been considered for superhydrophobicity on polymer and silicon. However these surfaces have been reported to be difficult to meet the robustness and transparency requirements for further applications, from self cleaning windows to biochip technology. Here we provided a novel method to fabricate a nearly superhydrophobic soda-lime glass using two-step method. The first step involved wet etching process to fabricate micro-sale patterns on soda-lime glass. The second step involved application of $SiO_x$-incorporated DLC to generate high intrinsic contact angle on the surface using chemical vapor deposition (CVD) process. To investigate the effect of surface roughness, we used both positive and negative micro-scale patterns on soda-limeglass, which is relatively hard for surface texturing in comparison to quartz or Pyrex glasses due to the presence of impurities, but cheaper. For all samples we tested the static wetting angle and transparency before and after 100 cycles of wear test using woolen steel. The surface morphology is observed using optical and scanning electron microscope (SEM). The results shows that negative patterns had a greater wear resistance while the hydrophobicity was best achieved using positive patterns having static contact angle up to 140 deg. with about 80% transparency. The overall experiment shows that positive patterns at etching time of 1 min shows the optimum transparency and hydrophobicity. The optimization of micro-scale pattern to achieve a robust, transparent, superhydrophobic soda-lime glass will be further investigated in the future works.