• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.211-218
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• 2000

The effects of alloying elements, Cr, Mo, and N on repassivation characteristics of stainless steels were investigated by using the abrading electrode technique and a.c impedance spectroscopy. The role of alloying elements on the stability of passive film and their repassivation characteristics were examined using alloy steels such as Fe-Cr, Fe-Cr-Mo, 304, 304LN, 316, and 316LN. The electrochemical characteristics of the passive film were investigated by in-situ d.c. and a.c. electrochemical methods. Localized corrosion resistance is believed to have much to do with the stability and repassivation characteristics of the passive film. The effects of alloying elements on the current transients and repassivation kinetics were systematically examined by using the abrading electrode technique and a.c. impedance spectroscopy. The experimental results were analyzed in order to elucidate the relationship between passive film stability, repassivation characteristics, and alloying elements.

• Corrosion Science and Technology
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• v.6 no.1
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• pp.7-11
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• 2007

In this study, new evaluation method for the stability and corrosion resistance properties of passive films has been suggested by means of observation of self-activation process in open-circuit state and galvanostatic nanoscale reduction test. The experiments were performed for air-formed oxide film in case of plain carbon steel, and for anodically passivated films formed in aqueous sulfuric acid solutions in case of titanium and 304 stainless steel. From these experimental results, we derived two parameters, $i_{0}$ and $q_{0}$, which characterize the self-activation process and the properties of passive film on a stainless steel surface. The parameter $i_{0}$ was defined as the rate of self-activation, and $q_{0}$, the reduced amount of charge during the self-activation process. In conclusion, it is considered that the stability and corrosion resistance of passive metals and alloys can be evaluated quantitatively by three parameters of $\tau_{0}$, $q_{0}$, and $i_{0}$, which easily obtain by means of observing the self-activation process and galvanostatic nanoscale reduction test.

• Corrosion Science and Technology
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• v.10 no.4
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• pp.125-130
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• 2011

This study was performed to improve the corrosion resistance and the stability of passive film on copper tube by potentiostatic polarization method in synthetic tap water. Formation of passive film was carried out by anodic potentiostatic polarization at various passivation potentials and passivation times in 0.1 M NaOH solution. Stability of passive film and corrosion resistance was evaluated by self-activation time, ${\tau}_0$ from passive state to active state on open-circuit state in 0.1 M NaOH solution. Addition of polyphosphate in NaOH solution prolonged the self-activation time and improved the corrosion resistance, and the addition of 5 ppm polyphosphate was most effective. It was also observed that better corrosion resistance was obtained by potentiostatic polarization at 1.0 V (vs. SCE) than at any other passivation potentials. Passivated copper tube showed perfect corrosion resistance for the immersion test in synthetic tap water showing that the anodic potentiostatic polarization treatment in 0.1 M NaOH with 5 ppm polyphosphate solution would be effective in improving the corrosion resistance and preventing the blue water problem.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.5
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• pp.97-105
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• 2008

The micro capacitors are passive elements necessary to electronic circuits and wireless portable PAN(personal area network) and Mobile Communications device modules in the baseband circuits in combination with another passive and active devices. As capacitance is proportionally increased with dielectric constant and electrode areas, in addition, inversely decreased the thickness of the dielectric material, thus thin film capacitors are generally seen as a preferable means to achieve high performance and thin film capacitors are used in a variety of functional circuit devices. In this paper, propose dielectric material as AIN(Aluminium nitride) to make micro thin film capacitor, and this capacitor has the MIM(metal-insulator-metal) structure. AIN thin films are widespread applied because they had more excellent properties such as chemical stability, high thermal conductivity, electrical isolation and so on. In addition, AIN films show low frequency response for baseband signal ranges, I-V and C-V electrical characterization of a thin film micro capacitor. The above experimental test and estimated results demonstrate that the thin film capacitor has sufficient and efficient functional performance to be the baseband range frequency of general electronics circuit and passive device applications.

• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.221-228
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• 1993

The general requirements of recording media include recording performance, environmental stability, runnability on the drive or deck, and manufacturability. CoCrMo thin films were prepared using RF sputtering system for a study on chemical stability. Surface degradation of the CoCrMo thin film was studied by SEM, XPS and AES. Surface degradation was found to be dependent of sputtering condition and Mo content. Addition of Mo to CoCr thin film improved dramatically its surface degradation resistance in dilute sulfuric acid, as indicated by active-passive transition appeared in electrochemical polarization curve. Futhermore, the passive current density was decreased with increasing Mo content. The reduction in a number density of corrosion sites by Mo addition vms observed, after accelerated corrosion test. AES survey indicated that corrosion occured on the site with Cr depletion and highly concentrated chloride ions.

• Corrosion Science and Technology
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• v.5 no.5
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• pp.153-159
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• 2006

Austenitic stainless steels with addition of various amounts of Mo and W were evaluated in terms of corrosion and contact resistance to determine optimum alloy composition of metallic bipolar plate for PEMFC. The corrosion property was evaluated by both acid fume exposure test at $130^{\circ}C$ and by electrochemical polarization tests in $H_3PO_4$ solution at $80^{\circ}C$. Austenitic stainless steel with proper amount of Mo and W demonstrated not only good corrosion resistance but also low contact resistance. Analyses on the passive film show that partial substitution of Mo by W enhances passive film stability and repassivation property. Test results suggest that austenitic stainless steel with 2 wt%Mo and 4 wt%W has optimum composition for metallic bipolar plate used in PEMFC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• Journal of the Korean Electrochemical Society
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• v.5 no.2
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• pp.62-67
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• 2002

The corrosion of the metallic cell components is blown to be one of the major reason f3r the performance degradation and subsequently the life-time limitation of the MCFC. To elucidate the corrosion phenomena, a corrosion study with the AISI-type 316L stainless steel, the most widely used separator material, in 621Li/38K carbonate eutectic melt was carried out. Corrosion phenomena in an MCFC were observed to differ from one location to another due to different environmental condition. The stability of passive film was found to be responsible fur the variations in corrosion phenomena. According to the potentiodynamic analysis, the passive film formed in anode-gas environment was less stable than in cathode-gas environment. The potentiostatic method combined with XRD analysis in addition to the cyclicvoltammetry was conducted to get an insight on variety corrosion reaction of AISI-type 316L stainless steel in a carbonate melt.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.168-170
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• 2001

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on corning glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then 10 ppm/$^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.81-84
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• 2004

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on coming glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then $10\;ppm/^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.