• Membrane and Water Treatment
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• v.11 no.2
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• pp.167-172
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• 2020

The effectiveness of in situ sediment capping as a technique for heavy metal risk mitigation in Hyeongsan River estuary, South Korea was studied. Sites in the estuary were found previously to show moderate to high levels of contamination of mercury, methylmercury and other heavy metals. A 400 m x 50 m section of the river was selected for a thin layer capping demonstration, where the total area was divided into 4 sections capped with different combinations of capping materials (zeolite, AC/zeolite, AC/sand, zeolite/sand). Pore water concentrations in the different sites were studied using diffusive gradient in thin film (DGT) probes. All capping amendments showed reduction in the pore water concentration of the different heavy metals with top 5 cm showing %reduction greater than 90% for some heavy metals. The relative maxima for the different metals were found to be translated to lower depths with addition of the caps. For two-layered cap with AC, order of placement should be considered since AC can easily be displaced due to its relatively low density. Investigation of methylmercury (MeHg) in the site showed that MeHg and %MeHg in pore water corresponds well with maxima for sulfide, Fe and Mn suggesting mercury methylation as probably coupled with sulfate, Fe and Mn reduction in sediments. Our results showed that thin-layer capping of active sorbents AC and zeolite, in combination with passive sand caps, are potential remediation strategy for sediments contaminated with heavy metals.

• Journal of Applied Reliability
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• v.9 no.2
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• pp.131-148
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• 2009

An organic light emitting diode (OLED), also light emitting polymer (LEP) and organic electro luminescence (OEL), is any light emitting diode (LED) whose emissive electroluminescent layer is composed of a film of organic compounds. The layer usually contains a polymer substance that allows suitable organic compounds to be deposited. They are deposited in rows and columns onto a flat carrier by a simple "printing" process. The resulting matrix of pixels can emit light of different colors. Such systems can be used in television screens, computer displays, small, portable system screens such as cell phones and PDAs, advertising, information and indication. OLEDs can also be used in light sources for general space illumination, and large-area light-emitting elements. In this paper, we develop the general guide line of the accelerated life test for assuring B10 life of AMOLED(Active Matrix Organic Light Emitting Diode) and PMOLED(Passive Matrix Organic Light Emitting Diode) which are widely used for display monitor less than 115 mm.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2006.05a
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• pp.306-309
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• 2006

Passive control of the shock wave/turbulent boundary-layer interaction control utilizing slotted plates over a cavity has been carried out. Effect of various slot configurations on the characteristics of the interactions are tested. Pitot/wall surface pressure distributions and flow visualizations including Schlierens and interference fringe patterns over a thin oil-film have been obtained at the downstream of the shock interactions. It was found that the interaction control by a certain slot-configuration could lead a reduction of the total pressure loss through the shock wave, however, the boundary layer thickness became thicker as compared with the case of no control.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.263-266
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• 2001

In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.81-84
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• 2004

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on coming glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then $10\;ppm/^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.04a
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• pp.146-150
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• 1996

A thermal micro actualtor has been fabricated using surface micromachining techniques. It consists of doped ploysilicon as a moving part and TEOS(Tetra Ethyl Ortho Silicate) as a sacrificial layer. The polysilicon was annealed for the reduction of residual stress which is the main cause to its deformation such as bending and buckling. And the newly developed HF VPE(vapor phase etching)process was also used as an effective release method for the elimination of sacrificaial layer. With noliquid involved during any of the steps for relasing, unlike other reported relase techniques, the HF VPE pocess has produced polysilicon microstructures with virtually no process-induced stiction problem. The actuation is incured by the thermal expasion due to current flow in active polysilicon cantilever, which motion is amplified bylever mechanism. The thickness of pllysilicon is 2 .mu. m and the length of active and passive polysilicon cantilever are 500 .mu. m, respectively. The moving distance of polysilicon actuator was experimentally conformed as large as 21 .mu. m at the input voltage level of 10 V and 50Hz square wave. These micro actuator technology can be utilized for the fabrication of MEMS (microlectromechanical system) such as microrelay, which requires large displacement or contact force but relatively slow response.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.287-290
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• 2003

For microwave device applications, c-axis oriented high temperature superconducting YBa$_2$Cu$_3$O$_{7-{\delta}}$ (HTS-YBCO) epitaxial thin films on the r-cut sapphire substrate(Al$_2$O$_3$) were prepared. In order to reduce the lattice mismatch with a substrate and to enhance the crystallity of HTS thin films, CeO$_2$ buffer layer on the r-cut sapphire substrate was grown by the RF-magnetron sputtering. The YBCO films on the CeO$_2$ buffer layer were deposited using the pulsed-laser deposition (PLD) method. These HTS YBCO /CeO$_2$/Al$_2$O$_3$ multilayer thin films(30 $\times$ 30 mm$^2$) routinely exhibited a critical temperature(T$_{c}$) of 89 K from the R-T measurement. Using HTS YBCO/CeO$_2$ /Al$_2$O$_3$ multilayer thin film. We fabricated and characterized the microwave passive devices (planar type filters) with cryopack-age such as the coupled -line type low-pass filter (LPF) and the open-loop meander type bandpass filter (BPF).filter (BPF).).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1181-1186
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• 2003

Chemical Mechanical Polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process, it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU %) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5 wt% hydrogen peroxide such as Fe(NO$_3$)$_3$, H$_2$O$_2$, and KIO$_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of Al$_2$O$_3$ particles in presence of surfactant stabilizing the slurry.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.1
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• pp.73-81
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• 2013

In this paper, we have proposed the interference analysis method which uses both an interference probability model at the PHY layer of RFID system and the DTMC model at the MAC layer of USN system. Using the proposed method, we have performed sharing analysis between passive RFID and USN systems at the Korean RFID/USN frequency bands. If 1% performance degradation of USN system is allowed, RFID and USN systems can share the frequency bands where channel number is greater or equal to 20 on condition that radius of protection area is greater than 300 m.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.12 s.354
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• pp.75-82
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• 2006

In this paper, we design the meander line inductors with high sensitivity and high quality factor(Q) using high characteristic impedance of aperture ground plate. Sensitivity as a frequency is new defined by variation of effective inductance per analysis frequency range instead of self resonance frequency (SRF). An equivalent lumped circuit is derived to explain the characteristic of high frequency inductor. The 4 nH meander line inductor with aperture ground plate has 0.45 nH/GHz of good sensitivity and 86 of Q at 0.7 GHz.