• Title, Summary, Keyword: Passivation

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Comparison of Passivation Property on Hydrogenated Silicon Nitrides whose Antireflection Properties are Identical (반사방지 특성을 통일시킨 실리콘 질화막 간의 패시베이션 특성 비교)

  • Kim, Jae Eun;Lee, Kyung Dong;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Korean Journal of Materials Research
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    • v.26 no.1
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    • pp.47-53
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    • 2016
  • Silicon nitride ($SiN_x:H$) films made by plasma enhanced chemical vapor deposition (PECVD) are generally used as antireflection layers and passivation layers on solar cells. In this study, we investigated the properties of silicon nitride ($SiN_x:H$) films made by PECVD. The passivation properties of $SiN_x:H$ are focused on by making the antireflection properties identical. To make equivalent optical properties of silicon nitride films, the refractive index and thickness of the films are fixed at 2.0 and 90 nm, respectively. This limit makes it easier to evaluate silicon nitride film as a passivation layer in realistic application situations. Next, the effects of the mixture ratio of the process gases with silane ($SiH_4$) and ammonia ($NH_3$) on the passivation qualities of silicon nitride film are evaluated. The absorption coefficient of each film was evaluated by spectrometric ellipsometry, the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained using a UV-visible spectrophotometer. The interface properties were determined by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD). In hydrogen passivation, gas ratios of 1:1 and 1:3 show the best surface passivation property among the samples.

Study on the Passivation of Si Surface by Incorporation of Nitrogen in Al2O3 Thin Films Grown by Atomic Layer Deposition (원자층 증착법으로 형성된 Al2O3 박막의 질소 도핑에 따른 실리콘 표면의 부동화 특성 연구)

  • Hong, Hee Kyeung;Heo, Jaeyeong
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.4
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    • pp.111-115
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    • 2015
  • To improve the efficiency of the Si solar cell, high minority carrier life time is required. Therefore, the passivation technology is important to eliminate point defects on the silicon surface, causing the loss of minority carrier recombination. PECVD or post-annealing of thermally-grown $SiO_2$ is commonly used to form the passivation layer, but a high-temperature process and low thermal stability is a critical factor of low minority carrier lifetime. In this study, atomic layer deposition was used to grow the $Al_2O_3$ passivation layer at low temperature process. $Al_2O_3$ was selected as a passivation layer which has a low surface recombination velocity because of the fixed charge density. For the high charge density, an improved minority carrier lifetime, and a low surface recombination, nitrogen was doped in the $Al_2O_3$ thin film and the improvement of passivation was studied.

Corrosion Behavior of Titanium for Implant in Simulated Body Fluids (인공 체액 조건에서 임플랜트용 티타늄 소재의 부식 특성)

  • 이중배;최기열
    • Journal of the Korean institute of surface engineering
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    • v.37 no.2
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    • pp.110-118
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    • 2004
  • The corrosion of pure titanium (CP- Ti Grade 2) and titanium alloy (Ti6Al4V ELI) were studied under various conditions of simulated body fluids. The static immersion test and the electrochemical test were performed in accordance with ISO 10271 : 2001. For the electrochemical test, the open circuit potential was monitored as a function of time, and the cyclic polarization curve was recorded. The corrosion resistance was evaluated from the values of corrosion potential, passivation current density, breakdown potential, and the shape of hysteresis etc. The effects of alloy type, surface condition, temperature, oxygen, and constituents in the fluids such as acid, chloride were estimated. Both specimens had extremely low dissolution rate in the static immersion test. They showed strong passivation characteristics in the electrochemical test. They maintained negligible current density throughout the wide anodic potential range. The passive layer was not broken up to 2.0 V (vs. SCE). The hysteresis and the shift of passivation potential toward the anodic direction was observed during the reversed scan. The passivation process appeared to be accelerated by oxygen in air or that dissolved in the fluids. The passivation also proceeded without oxygen by the reaction of constituents in the fluids. Acid or chloride in the fluids, specially later weakened the passive layer, and then induced higher passivation current density and less shift of passivation potential in the reversed scan. CP-Ti Grade 2 was more reactive than Ti6Al4V ELI in the fluids containing acid or chloride, but thicker layer produced on its surface provided higher corrosion resistance.

In-Situ Fluorine Passivation by Excimer Laser Annealing

  • Jung, Sang-Hoon;Kim, Cheon-Hong;Jeon, Jae-Hong;Yoo, Juhn-Suk;Han, Min-Koo
    • Journal of Information Display
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    • v.1 no.1
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    • pp.25-28
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    • 2000
  • We propose a new in-situ fluorine passivation of poly-Si TFTs using excimer laser annealing to reduce the trap state density and improve reliability significantly. To investigate the effect of an in-situ fluorine passivation, we have fabricated fluorine-passivated p-channel poly-Si TFTs and examined their electrical characteristics and stability. A new in-situ fluorine passivation brought about an improvement in electrical characteristic. Such improvement is due to the formation of stronger Si-F bonds than Si-H bonds in poly-Si channel and $SiO_2$/Poly-Si interface.

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The effects of sulfur passivation on the performance of ITO/InP solar cells (ITO/InP 태양전지 제작에 응용된 sulfur passivation의 효과)

  • 이영철;한교용
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.9
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    • pp.50-55
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    • 1997
  • In order to improve the electrical performance of ITO/InP solar cells, sulfur passivation technique was employed using (N $H_{4}$)$_{2}$ $S_{x}$ solution. Passivation effects were analyzed by measuring the short circuit current density ( $J_{sc}$ ) of solar cells and photoluminescence (PL) of ITO/InP interfaces. This paper firstly reports the sulfur passivation effects by investigating the correlation between the PL intensity and the short circuit current. Generally, PL intensity and the short circuit current of sulfur passivated sampels wer eincreased, and showed the same trend. Especially, samples prepared at 60.deg. C (N $H_{4}$)$_{2}$ $S_{x}$ solution exhibited the highest $J_{sc}$ and PL intensity. These results demonstrated that the short circuit currents was influenced by the ITO/InP interface states.

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Fabrication of ITO/InP solar cells by employing H$_{2}$S plasma passivation technique (H$_{2}$S 플라즈마 passivation 방법을 응용한 ITO/InP 위성용 태양전지의 제작)

  • 이영철;한교용
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.1
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    • pp.59-65
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    • 1998
  • In order to simulataneously achieve surface type conversion and sulfur passivation of p-type InP, a Ha$_{2}$S plasma dry passivation technique was firstly proposed and successfully applied to the fabrication of ITO/InP solar cells. This new technique was expected to improve the performance of solar cells. The devices, fabricated by changing the process parameters such as RF power and plasma exposure time, were characterized and PL measurements were performed to investigate the passivation effects. As a result, H$_{2}$S plasma treated solar cells demonstrated better performance than that of (NH$_{4}$)$_{2}$S$_{x}$ treated ones.s.

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Hybrid Passivation for Organic-Thin Film Transistor on Plastic

  • Han, Seung-Hoon;Kim, Yong-Hee;Kim, Sung-Hoon;Kim, Chang-Hyun;Jeon, Tae-Woo;Lee, Sun-Hee;Choi, Min-Hee;Choo, Dong-Jun;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.979-982
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    • 2008
  • We studied hybrid passivation using parylene-C, metal, photoacyl and indium zinc oxide for pentacene OTFT to assure stability in subthreshold region. After the passivation, the changes in S and $V_{on}$ of OTFT were negligible and $I_{off}$ maintained its initial value of ${\sim}10^{-12}$ A. Therefore, the hybrid passivation is suitable for practical applications based on OTFT.

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Thin composite film passivation through RF sputtering method For Large-sized Organic Display Devices

  • Lee, Joo-Won;Kim, Young-Min;Park, Jung-Soo;Bea, Sung-Jin;Kim, Na-Rae;Kim, Jai-Kyeong;Jang, Jin;Ju, Byeong-Kwon
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1480-1483
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    • 2005
  • Transparent thin composite films (TCFs) were deposited on OLED devices by means of RF sputtering method and their passivation-properties were evaluated by comparing to the e-beam evaporating method. This composite film formed by mixed ratio of MgO (3wt %): $SiO_2$ (1wt %) was developed from pallet as a source of e-beam evaporator to 6-inch size target for sputtering in order to apply for large-sized organic display devices. Water Vapor Transmission Rates (WVTR) of the deposited films were measured as a function of thickness to assess the effectiveness of this film as a passivation layer and it applied to real devices. From this study, we can confirm that the passivation layer formed by TCFs using RF sputtering method sufficiently shows the potentiality of application to passivation layer for organic display devices.

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Investigation of the surface oxide/nitride passivation formation screen printed crystalline silicon solar cells (표면 oxide/nitride passivation 적용된 Screen printed 결정질 태양전지 특성 평가)

  • Lee, Ji-Hun;Cho, Kyeng-Yeon;Lee, Soo-Hong;Lee, Kyu-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.223-224
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    • 2008
  • Important element are low cost, high-efficiency crystalline silicon solar cells. in this paper, Will be able to contribute in low cost, high-efficiency silicon solar cells, Applies oxide/nitride passivation, produced screen-printed solar cells. and the Measures efficiency, and evaluated a justice quality oxide/nitride passivation screen-printed solar cells.

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Thin Film Passivation of Organic Light Emitting Diodes by Catalyzer Enhanced Chemical Vapor Deposition (CECVD) (촉매반응 화학기상증착법을 이용한 유기발광소자의 박막 봉지)

  • Kim, Han-Ki;Moon, J.M.;Bae, J.H.;Jeong, S.W.;Kim, M.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.71-72
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    • 2006
  • We report on plasma damage free chemical vapor deposition technique for the thin film passivation of organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays using catalyzer enhanced chemical vapor deposition (CECVD). Specially designed CECVD system has a ladder-shaped tungsten catalyzer and movable electrostatic chuck for low temperature deposition process. The top emitting OLED with thin film $SiN_x$ passivation layer shows electrical and optical characteristics comparable to those of the OLED with glass encapsulation. This indicates that the CECVD technique is a promising candidate to grow high-quality thin film passivation layer on OLED, OTFT, and flexible displays.

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