• Title, Summary, Keyword: Passivation

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Effect of Hydrogen Passivation on the Photoluminescence of Si Nanocrystallites Thin Flms (수소 Passivation에 따른 실리콘 나노결정 박막의 광학적 특성 변화 연구)

  • 전경아;김종훈;이상렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.29-32
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    • 2001
  • Hydrogen passivation of Si nanocrystals identifies luminescence mechanism indirectly. Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser After deposition, Si nanocrystallites thin films have been annealed at 600$^{\circ}C$ and 760$^{\circ}C$ in nitrogen ambient, respectively. Hydrogen passivation was subsequently performed at 500$^{\circ}C$ in forming gas (95 % N$_2$ + 5 % H$_2$) for an 1 hour. We report the photoluminescnece(PL) property of Si thin films by the hydrogen passivation. The luminescence mechanism of Si nanocrystallites has also been investigated.

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Passivation for flexible organic light emitting diodes using parylene

  • Choi, Sung-Hoon;Oh, Myung-Hwan;Lee, Chan-Jae;Moon, Dae-Gyu;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.996-998
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    • 2004
  • In this study, we tested parylene as the passivation layer for flexible organic light emitting diodes (FOLEDs).Parylene as passivtion layer has several advantages which are good optical transparent and low moisture penetration. For more an effective passivation of FOLEDs, we suggest hybrid passivation layer with parylene and silicon oxide. We compared electrical properties and stability of the device with and without passivation layer. The lifetime of FOLED with hybrid passivation layer was increased over three times than that of non-passivated of FOLED.

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Ultra Thin Film Encapsulation for Flexible OLED (플렉시블 유기 EL 소자를 위한 초박막 보호층)

  • Lim, J.S.;Shin, P.K.;Lim, K.B.;Song, J.H.;Kim, C.Y.;Lee, B.S.;Jeung, Y.S.;Lim, H.C.
    • Proceedings of the KIEE Conference
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    • pp.1412-1413
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    • 2006
  • In this research, an organic thin 13 passivation layer was newly adopted to prefect the organic layer from ambient moisture and oxygen. As the organic thin film passivation layer, poly methyl methacrylate thin films (ppMMA) were deposited using a plasma polymerization technique. In order to their passivation performance for OLEDs, water vapor transmission rate (WVTR) of the ppMMAs were analyzed and luminance-current-voltage (L-I-V)/luminance-time (L-T) characteristics of the OLEDs with and without ppMMA passivation layer were investigated. The OLEDs had a structure of ITO/TPD (HTL)/Alq3(EML&ETL)/Al. The OLED with ppMMA passivation layer showed improved L-T performance than that of without ppMMA passivation layer.

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Silicon Heterojunction Solar Cell with HWCVD Passivation Layer (HWCVD 계면 보호층을 적용한 실리콘 이종접합 태양전지 연구)

  • Park, Sang-Hyun;Jeong, Dae-Young;Kim, Chan-Seok;Song, Jun-Yong;Cho, Jun-Sik;Lee, Jeong-Chul;Choe, Deok-Gyun;Yoon, Kyoung-Hoon;Song, Jin-Soo
    • 한국신재생에너지학회:학술대회논문집
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    • pp.346-346
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    • 2009
  • For high efficiency hetero junction solar cell over 20%, good silicon wafer passivation is one of the most important technological factor. Compared to the conventional PECVD technique, HWCVD has appeared as an promising alternative for high quality passivation layer formation. In this work, HWCVD passivation layer characteristics have been intensively investigated on wafer surface treatment, Hydrogen density in deposited thin layer and thermal effects in deposition process. Comprehensive results of the individual process factors on interface passivation has been discussed and resultant silicon hetero junction solar cell characteristics has been investigated.

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열선 CVD를 이용한 a-Si:H의 c-Si표면 passivation 및 열처리 효과 분석

  • Jeong, Dae-Young;Kim, Chan-Seok;Song, Jun-Yong;Wang, Jin-Suk;Park, Sang-Hyun;Lee, Jeong-Chul
    • 한국신재생에너지학회:학술대회논문집
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    • pp.397-397
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    • 2009
  • c-Si wafer에 HWCVD로 증착된 a-Si:H 박막은 초기에 낮은 passivation 특성을 가지나 열처리 공정을 통해 효과적인 passivation을 가진다. 열처리 공정은 온도와 시간에 따라 큰 차이를 보인다. 이에 열선CVD를 이용하여 n type의 c-Si 기판에 a-Si:H을 증착하여 열처리 온도에 따른 Minority carrier Lifetime를 QSSPC를 통해 passivation 특성을 측정하였다. 온도는 $150^{\circ}C{\sim}270^{\circ}C$로 변화하여 측정하였다. 또한 열처리 시간을 10분씩 증가시켜 열처리 시간에 따른 passivation을 연구, 1ms에 이르는 Minority carrier lifetime을 얻었다.

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Waveguiding Effect in Electroabsorption Modulators: Passivation Layers and Their Impact on Extinction Ratios

  • Shin, Dong-Soo
    • ETRI Journal
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    • v.27 no.1
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    • pp.95-101
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    • 2005
  • Waveguide structures of the stand-alone electroabsorption (EA) modulator and the electroabsorption modulated laser (EML) are investigated using the 3D beam propagation method. The EA waveguide structures with InP-based passivation layers show saturation in the extinction ratio (ER) due to the stray light traveling through the passivation layers. This paper demonstrates that narrower passivation layers suppress stray-light excitation in the EA waveguide, increasing the ER. A taper structure in the isolation section of the EML waveguide can reduce the mode mismatch and suppress the excitation of the stray light, increasing the ER further. Low-index-polymer passivation layers can confine the mode more tightly in the active waveguide, yielding an even higher ER.

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Light Enhancement Al2O3 Passivation in InGaN/GaN based Blue Light-emitting Diode Lamps

  • So Soon-Jin;Kim Kyeong-Min;Park Choon-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.8
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    • pp.775-779
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    • 2006
  • In this study, sputtered $Al_2O_3$ thin films were evaluated as a passivation layer in the process of InGaN-based blue LEDs in order to improve the brightness of LED lamps. In terms of packaged LED lamps, lamps with $Al_2O_3$ passivation layer emanated higher brightness than those with $SiO_2$ passivation layer, and LED lamps with 90 nm $Al_2O_3$ passivation layer were the brightest among four kinds of lamps. Although lamps with $Al_2O_3$ passivation had a slight increase in operating voltage, their brightness was improved about 13.6 % compare to the lamps made of conventional LEDs without the changes of emitting wavelength.

Dielectric Passivation and Geometry Effects on the Electromigration Characteristics in Al-1%Si Thin Film Interconnections

  • Kim, Jin-Young
    • Journal of Korean Vacuum Science & Technology
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    • v.5 no.1
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    • pp.11-18
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    • 2001
  • Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.

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Characteristics and Countermeasures of the Passivation Layers in Chalcopyrite Bioleaching (황동석 생물학적 침출 관련 부동태층의 특성 및 저감 방안)

  • Lee, Sang-hun
    • Journal of the Korean Society of Mineral and Energy Resources Engineers
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    • v.54 no.6
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    • pp.700-709
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    • 2017
  • One of the most significant reasons that Cu bioleaching in chalcopyrite has been economically unsuccessful until now is an occurrence of passivation layers along with oxidative dissolution. Therefore, this study summarized the previous studies on the characteristics and the countermeasures of the passivation layers generated in chalcopyrite bioleaching. The width of passivation layers is too small to be directly observed; instead, existence and impact of the layers have been identified through the indirect ways such as the voltammetry and the reaction kinetics. Passivation layers consist of various compounds, among which jarosite is possibly the most critical compound to inhibit Cu bioleaching from chalcopyrite. Interestingly, an alternative explanation was recently suggested that the passivation result from inherent semiconductor characteristics of chalcopyrite, not from the existence of any kind of coating layers. The techniques to overcome the passivation issues include utilization of thermophilic microorganisms, catalysts, or external electrodes, as well as suppression or removal of jarosite.