• Title/Summary/Keyword: Passivation

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Crystallization of Passivation Glass for Electronic Devices (전자장치용 Passivation 유리의 결정화에 관한 연구)

  • 손명모;박희찬;이헌수
    • Journal of the Korean Ceramic Society
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    • v.30 no.2
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    • pp.107-114
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    • 1993
  • Zinc-Borosilicate(ZnO 65.0wt%, B2O3 21.5wt%, SiO2 9.0wt%, PbO or tiO2 4wt%) passivation glasses were studied using differential thermal analysis(DTA), scanning electron microscopy(SEM) observations, X-ray diffraction (XRD) patterns and measurement of thermal expansion coefficients. Passivation glasses containing 4wt% TiO2 and 4wt% PbO had crystallization temperature of 680~73$0^{\circ}C$ and major crystalline phases were identified by X-ray diffraction as $\alpha$-ZnO.B2O3 and $\alpha$-5ZnO.2B2O3. As increasing firing temperature, the size of crystalline phases increased by observation of SEM. The thermal expansion coefficient of crystallized glass frits was smaller than that of unfired glass.

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Impact of Passivation and Reliability for Base-exposed InGaP/GaAs HBTs

  • Park, Jae-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.3
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    • pp.115-120
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    • 2007
  • Reliability between passivated and unpassivated process with the base-exposed InGaP/GaAs HBTs was studied. A passivation of HBT was attempted by $SiO_2$ thin film deposition at $300^{\circ}C$ by means of PECVD. Base-exposed InGaP/GaAs HBTs before and after passivation were investigated and compared in terms of DC and RF performance. Over a total period of 30 days, passivated HBTs show only 2% degradation of DC current gain for the high current density of $40KA/cm^2$. The measured thermal resistance of $2{\times}30{\mu}m^2$ single emitter InGaP/GaAs HBT passivated with PECVD $SiO_2$ devices can be extracted and was founded to be 1430 K/W. The estimated MTTF was $2{\times}10^7hr\;at\;T_j=125^{\circ}C$ with an activation energy $(E_a)$ of 1.37 eV.

Study on Solution Processed Indium-Yttrium-Oxide Thin-Film Transistors Using Poly (Methyl Methacrylate) Passivation Layer (PMMA 보호막을 이용한 용액 공정 기반의 인듐-이티륨-산화물 트랜지스터에 관한 연구)

  • Kim, Han-Sang;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.7
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    • pp.413-416
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    • 2017
  • We investigated solution-processed indium-yttrium-oxide (IYO) TFTs using apoly (methyl methacrylate) (PMMA) passivation layer. The IYO semiconductor solution was prepared with 0.1 M indium nitrate hydrate and 0.1 M yttrium acetate dehydrate as precursor solutions. The solution-processed IYO TFTs showed good performance: field-effect mobility of $13.13cm^2/Vs$, a threshold voltage of 8.2 V, a subthreshold slope of 0.93 V/dec, and a current on-to-off ratio of $7.2{\times}10^6$. Moreover, the PMMA passivation layers used to protectthe IYO active layer of the TFTs, did so without deteriorating their performance under ambient conditions; their operational stability and electrical properties also improved by decreasing leakage current.

InGaAs/InP HPT's with ITO Transparent Emitter Contacts (ITO 에미터 투명전극을 갖는 InGaAs/InP HPT의 연구)

  • Han, Kyo-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.3
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    • pp.268-272
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    • 2007
  • A fully integrable InP/InGaAs HPT with an ITO emitter contact was first fabricated by employing a $SiO_2$ passivation layer. The electrical and the optical characteristics of the HPT with a passivation layer were measured and compared with those of the HPT without a passivation layer. The only noticeable difference was the increased emitter series resistance of the HPT with a passivation layer. AES analysis was performed to explain the reason of the increased emitter series resistance. Results show that PECVD $SiO_2$ deposition and annealing processes cause the diffusion of oxygen to the interface and the depletion of tin at the interface, which may be responsible for the increase of the series resistance.

Switching of the Dimer-row Direction through Sb-passivation on Vicinal Si(001) Surface of a Single Domain

  • Dugerjav, Otgonbayar;Kim, Hui-Dong;Seo, Jae-Myeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.186-186
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    • 2011
  • [100] 방향으로 4$^{\circ}$ 기울어진 Si(001)-2${\times}$1(vicinal surface)을 초고진공하(UHV)에서 청결하게 하고 열처리하면 rebonded-atom을 가진 DB double step과 이 step에 나란한 아홉 개의 dimer를 가진 평균 폭이 4.0 nm인 single-domain의 (001)-2${\times}$1 테라스의 면으로 재구조된다 [그림 a]. 본 연구에서는 이 표면 위에 Sb을 상온에서 증착하여 덮고 후열처리하면(2 ML, 500$^{\circ}C$ 10 분), Sb-dimer가 Si 표면을 한 층 덮고 (001) 테라스의 Sb-dimer 방향이 DA double-step과 수직을 이루는 1${\times}$2 구조를 이룬다는 사실을 STM으로 확인하였다 [그림 b]. 이러한 Sb-passivation의 효과는 표면 Si-dimer의 부분적으로 채워진 dangling-bond를 Sb-dimer의 완전히 채워진 고립쌍(lone-pair)으로 바꿈으로써 표면 자유 에너지를 줄이고, 나아가 계면 Si 층은 bulk에 유사하게 되는 데에 있다. 이 passivation 된 표면은 Ge/Si 등의 heteroepitaxy에 사용할 수 있고, 특히 single-domain을 유지하며 step 방향에 대해 평행인 dimer-row로 이루어져 있어서 원자나 전자의 이동에 비등방적 효과를 증가시킬 것이 예측된다.

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A Novel Reactive Sputtered Passivation for Large Size TFT-LCD

  • Kim, Hong-Sik;Lim, Joo-Soo;Hong, Hyun-Seok;Kwack, Hee-Yong;Ahn, Sung-Hoon;Yu, Sang-Jeon;Shin, Jong-Keun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.594-596
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    • 2009
  • Amorphous silicon nitride (a-SiNx) passivation film as a passivation layer of TFT-LCDs was deposited by AC-reactive sputtering at low temperature. As a result, the electrical characteristics and reliability of TFT with novel passivation showed the same level as the conventional TFT. Finally, we have developed 47"Full HD IPS TFT-LCDs with sputtered amorphous silicon nitride. It is suitable for low temperature based applications such as OTFT and Flexible display.

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Passivation of organic light emitting diodes with a-$SiN_x$ thin films grown by catalyzer enhanced chemical vapor deposition

  • Jeong, Jin-A;Kang, Jae-Wook;Kim, Han-Ki
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.659-662
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    • 2007
  • The characteristics of a $SiN_x$ passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the $SiN_x$ layer are described. Despite the low substrate temperature, the single $SiN_x$ passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of $2{\sim}6{\times}10^{-2}\;g/m^2/day$ and a high transmittance of 87 %. In addition, current-voltage-luminescence results of an OLED passivated with a 150 nm-thick $SiN_x$ film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the $SiN_x$ deposition.

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Study on Electro-Optic Characteristics Dependent on Passivation Layer Thickness in the FFS mode using a Liquid Crystal with Positive Dielectric Anisotropy (유전율 이방성이 양인 액정을 이용한 FFS모드의 절연층 두께에 따른 전기 광학 특성 연구)

  • Lee, Ji-Youn;Park, Sang-Hyun;Oh, Sang-Min;Lee, Seung-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.485-486
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    • 2005
  • Fringe-field switching mode which has a horizontal and vertical electric field exhibits high transmittance and wide viewing angle characteristics. In the FFS mode, a passivation layer between common and pixel electrodes exists, which functions as preventing current leakage of fringe-field. In this paper, we have studied LC behavior, transmittance and operating voltage characteristics with applied voltage as a function of the passivation layer thickness and defined optimal value of the layer to be about $0.5{\mu}m$.

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Enhanced Stability of Perovskite Solar Cells using Organosilane-treated Double Polymer Passivation Layers

  • Park, Dae Young;Byun, Hye Ryung;Kim, Hyojung;Kim, Bora;Jeong, Mun Seok
    • Journal of the Korean Physical Society
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    • v.73 no.11
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    • pp.1787-1793
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    • 2018
  • The power conversion efficiency of perovskite solar cells has reached 23.3%. Although significant developments have been made through intensive studies, the stability issue is still challenging. Passivation of perovskite solar cells with a transparent polymer provides better stability; however, there are a few disadvantages of organic polymer such as low thermal stability, weak adhesion and the lack of water retention ability. In this work, we prepared a dual Parylene-F/C layer with 3-methacryloxypropyltrimethoxysilane, A-174, to combine the advantages of organic and inorganic materials. As a result, A-174 treated dual Parylene-F/C layer demonstrated improved passivation effects compared to a single Parylene layer due to the strong binding of Parylene and the water retention ability by $SiO_2$ formed from A-174. This synergetic effects can be expanded to the combination of other organic materials and organosilane compounds.

Polymer Passivation Effect on Methylammonium Lead Halide Perovskite Photodetectors

  • Kim, Hyojung;Byun, Hye Ryung;Kim, Bora;Kim, Sung Hyuk;Oh, Hye Min;Jeong, Mun Seok
    • Journal of the Korean Physical Society
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    • v.73 no.11
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    • pp.1675-1678
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    • 2018
  • Methylammonium lead halide ($MAPbI_3$) perovskites are considered as promising materials owing to their excellent optical and electrical properties. However, perovskite materials suffer from degradation in air, which limits their practical applications. Here, we demonstrate successful passivation of the $MAPbI_3$ photodetectors through monochloro-para-xylylene (Parylene-C) deposition. The time-dependent photocurrent characteristics were systematically investigated, and we achieved significantly improved device performance and stability with Parylene-C passivation. Based on the excitation-power-dependent photoluminescence (PL) data, we confirmed that Parylene-C can reduce the carrier losses in $MAPbI_3$, leading to the enhancement of photocurrent and PL in $MAPbI_3$ photodetectors.