• 제목/요약/키워드: Passivation

검색결과 839건 처리시간 0.034초

H$_{2}$S 플라즈마 passivation 방법을 응용한 ITO/InP 위성용 태양전지의 제작 (Fabrication of ITO/InP solar cells by employing H$_{2}$S plasma passivation technique)

  • 이영철;한교용
    • 전자공학회논문지D
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    • 제35D권1호
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    • pp.59-65
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    • 1998
  • In order to simulataneously achieve surface type conversion and sulfur passivation of p-type InP, a Ha$_{2}$S plasma dry passivation technique was firstly proposed and successfully applied to the fabrication of ITO/InP solar cells. This new technique was expected to improve the performance of solar cells. The devices, fabricated by changing the process parameters such as RF power and plasma exposure time, were characterized and PL measurements were performed to investigate the passivation effects. As a result, H$_{2}$S plasma treated solar cells demonstrated better performance than that of (NH$_{4}$)$_{2}$S$_{x}$ treated ones.s.

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초고집적 Submicron 박막금속화를 위한 Dielectric Overlayer의 Passivation 효과 (The Effects of Dielectric Passivation Overlayers for Submicron Thin Film Metallizations of ULSI Semiconductor Devices)

  • 김대일;김진영
    • 한국진공학회지
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    • 제3권1호
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    • pp.59-64
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    • 1994
  • 극소전자 디바이스의 고집적화와 더불어 박막배선의 선폭은 0.5$\mu$m이하까지 축소되며 초고집적 submicron 박막금속화가 진행되고 있다. 미세회로에 적용되어지는 배선재료는 인가되는 고전류밀도로 인하여 electromigration 에 의한 결함이 쉽게 발생한다는 단점이있다. 금속박막 전도체위의 dielectric overlayer는 electromigration 에 대한 passivation 효과를 보여 극소전자 디바이스의 평균수명을 향상시 킨다.본 연구에서는 박막금속화에서 dielectric overlayer의 passivation 효과를 알아보기 위하여 약 3000 $\AA$ 두께의 Al,Al-1%Si, Ag 그리고 Cu 박막배선위에 증착하여 SiO2절연보호막의 유무에 따른 박막배선 의 수명변화 및 신뢰도를 측정하였다. 박막배선에 인가된 전류밀도는 1x106 A/cm2와 1x107 A/cm2 이었다. SiO2 dielectric overlayer는 Al,Al-1%Si Ag. Cu 박막배선에서는 electromigration에 대한 보호막 혀과를 보이며 평균수명을 모두 향상시킨다. SiO2 passivation 효과는 Al, Ag, Cu 박막중 Cu 박막배선에서 가 장 크게 나타났다. SiO2 dielectric overlayer가 형성되지 않은 경우 Al 박막배선의 수명이 가장 긴 것으 로 나타났으나 SiO2 가 형성된 경우는 Cu 박막배선의 수명이 가장 길게 나타났다.

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Effect of Chemical Passivation Treatment and Flow on the Corrosion of 304 Stainless Steel in Hydrochloric Acid Solution

  • Zhao, Jie;Cheng, Cong Qian;Cao, Tie Shan
    • Corrosion Science and Technology
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    • 제14권6호
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    • pp.273-279
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    • 2015
  • Effects of passive film quality by chemical passivation and solution flow on the corrosion behavior of 304 stainless steel in HCl solution were investigated using a coloration indicator, and by corrosion weight loss, electrochemical polarization and element dissolution measurements. A high redness degree suggests a low passive-film integrity for 304 stainless steel following air exposure, while the minimum redness degree for the samples after chemical passivation suggests a high passive-film integrity. In the static condition, samples subjected to air exposure exhibited a high corrosion rate and preferential dissolution of Fe. Chemical passivation inhibited the corrosion rate due to the intrinsically high structural integrity of the passive film and high concentrations of Cr-rich oxides and hydroxide. Solution flow accelerated corrosion by promoting both the anodic dissolution reaction and the cathodic reaction. Solution flow also altered the preferential dissolution to fast uniform dissolution of metal elements.

Hybrid Passivation for Organic-Thin Film Transistor on Plastic

  • Han, Seung-Hoon;Kim, Yong-Hee;Kim, Sung-Hoon;Kim, Chang-Hyun;Jeon, Tae-Woo;Lee, Sun-Hee;Choi, Min-Hee;Choo, Dong-Jun;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.979-982
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    • 2008
  • We studied hybrid passivation using parylene-C, metal, photoacyl and indium zinc oxide for pentacene OTFT to assure stability in subthreshold region. After the passivation, the changes in S and $V_{on}$ of OTFT were negligible and $I_{off}$ maintained its initial value of ${\sim}10^{-12}$ A. Therefore, the hybrid passivation is suitable for practical applications based on OTFT.

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The Improvement of Display Brightness in LCD-TV Panel through the Optimization of Organic Passivation Process

  • Lee, Yeong-Beom;Lee, Hi-Kuk;Kim, Shi-Yul;Kim, Sang-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.235-238
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    • 2008
  • We report the improvement in brightness through the optimization of the organic passivation process for fabricating a TFT substrate for LCD-TV panel. In conclusion, the optimization of organic passivation was accomplished with improving over $10\;cd/m^2$ in brightness than that of a conventional organic passivation process.

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In-Situ Fluorine Passivation by Excimer Laser Annealing

  • Jung, Sang-Hoon;Kim, Cheon-Hong;Jeon, Jae-Hong;Yoo, Juhn-Suk;Han, Min-Koo
    • Journal of Information Display
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    • 제1권1호
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    • pp.25-28
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    • 2000
  • We propose a new in-situ fluorine passivation of poly-Si TFTs using excimer laser annealing to reduce the trap state density and improve reliability significantly. To investigate the effect of an in-situ fluorine passivation, we have fabricated fluorine-passivated p-channel poly-Si TFTs and examined their electrical characteristics and stability. A new in-situ fluorine passivation brought about an improvement in electrical characteristic. Such improvement is due to the formation of stronger Si-F bonds than Si-H bonds in poly-Si channel and $SiO_2$/Poly-Si interface.

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ITO/InP 태양전지 제작에 응용된 sulfur passivation의 효과 (The effects of sulfur passivation on the performance of ITO/InP solar cells)

  • 이영철;한교용
    • 전자공학회논문지D
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    • 제34D권9호
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    • pp.50-55
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    • 1997
  • In order to improve the electrical performance of ITO/InP solar cells, sulfur passivation technique was employed using (N $H_{4}$)$_{2}$ $S_{x}$ solution. Passivation effects were analyzed by measuring the short circuit current density ( $J_{sc}$ ) of solar cells and photoluminescence (PL) of ITO/InP interfaces. This paper firstly reports the sulfur passivation effects by investigating the correlation between the PL intensity and the short circuit current. Generally, PL intensity and the short circuit current of sulfur passivated sampels wer eincreased, and showed the same trend. Especially, samples prepared at 60.deg. C (N $H_{4}$)$_{2}$ $S_{x}$ solution exhibited the highest $J_{sc}$ and PL intensity. These results demonstrated that the short circuit currents was influenced by the ITO/InP interface states.

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SiNx 박막에 의한 OLED 소자의 보호막 특성 (Passivation Properties of SiNx Thin Film for OLEO Device)

  • 주성후
    • 한국전기전자재료학회논문지
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    • 제19권8호
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    • pp.758-763
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    • 2006
  • We has been studied the thin film encapsulation effect for organic light-emitting diodes (OLED). To evaluate the passivation properties of the passivation layer materials, we have carried out the fabrication of green light emitting diodes with ultra violet(UV) light absorbing polymer resin, $SiO_2,\;and\;SiN_x$, respectively. From the measurement results of shrinkage properties according to the exposure time to the atmosphere, we found that $SiN_x$ thin film is the best material for passivation layer. We have investigated the emission efficiency and life time of OLED device using the package structure of $OLED/SiN_x/polymer$ resin/Al/polymer resin. The emission efficiency of this OLED device was 13 lm/W and life time was about 2,000 hours, which reach 95 % of the performance for the OLED encapsulated with metal.

플렉시블 OLED 패시베이션용 유기 박막 제작 및 특성 (Fabrication of Organic Thin Film for Flexible OLED Passivation and Its Characterization)

  • 김관도
    • 반도체디스플레이기술학회지
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    • 제19권1호
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    • pp.93-96
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    • 2020
  • Polyimide thin film was prepared by annealing the polyamic acid that was synthesized through co-deposition of diamine and dianhydride. The polyamic acid and polyimide thin film were characterized with FT-IR and HR FE-SEM. The average roughness of the film surface, evaluated with AFM, were 0.385 nm and 0.299 nm after co-deposition, and annealing at 120 ℃ respectively. OLED was passivated with the polyimide layer of 200 nm thickness. While the inorganic passivation layer enhances the WVTR of OLED, the organic passivation layer gives flexibility to the OLED. The in-situ passivation of OLED with organic thin film layer provides the leading technique to develop flexible OLED Display.

표면 oxide/nitride passivation 적용된 Screen printed 결정질 태양전지 특성 평가 (Investigation of the surface oxide/nitride passivation formation screen printed crystalline silicon solar cells)

  • 이지훈;조경연;이수홍;이규상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.223-224
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    • 2008
  • Important element are low cost, high-efficiency crystalline silicon solar cells. in this paper, Will be able to contribute in low cost, high-efficiency silicon solar cells, Applies oxide/nitride passivation, produced screen-printed solar cells. and the Measures efficiency, and evaluated a justice quality oxide/nitride passivation screen-printed solar cells.

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