• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.12 no.2
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• pp.113-119
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• 2000

An experimental study has been carried out in order to investigate on a particle deposition on a circular cylinder surface. The present study is focused on the particulate fouling occurring in a heat exchanger for a seawater desalinization, in a laminar flow over circular cylindrical tubes. The objective is to investigate how NaCl concentration influences the $SiO2$ particle deposition on the surface of a glass circular cylinder. The NaCl concentration was changed from 0 g/L to 40 g/L. As the experimental results of $SiO2$ particle which is deposited on the glass circular cylinder surface showed, particle deposition rate per unit time increases rapidly with the increase of NaCl concentration between 0 g/L and 15 g/L. After the maximum of particle deposition rate was found at the NaCl concentration of 15 g/L, particle deposition rate remains unchanged or decreases gradually with the NaCl concentration from 15 g/L to 40 g/L. Also the $SiO2$ deposition rate of particles does not have serious variations with the position at present glass surface.

• Journal of Korean Society of Water and Wastewater
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• v.22 no.1
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• pp.159-168
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• 2008

A special field experiment has been carried out from March 2001 to June 2001 at the Changhowon in Kyunggi to investigate a better methodology for the estimation of dry deposition of pollutions applicable in Korea. In this study, dry deposition plate was used to measure of total and water soluble acidic mass fluxes, and CPRI(Coarse Particle Rotary Impactor), CI(Cascade Impactor) were also used to measure ambient concentrations in various particle size ranges. Sehmel-Hodgson model was used to estimate dry depostion velocity and Weibull probability distribution function was applied to get generalized particle size distribution for the size fractioned concentration data sampled by CPRI and CI. Atmospheric dry deposition fluxes of mass and ionic matters estimated by the various techniques(one-step, multi-step, equi-concentration, subdivision for only the coarse particle range, applying Weibull distribution function, etc.) were compared to flux data sampled by DDP. It was found out that the deposition fluxes estimation methodology calculated by the each particle size range devided by particle size distribution characteristics and the rapidly changed points of deposition velocity using Weibull probability distribution function was the most applicable.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.