• Bulletin of the Korean Chemical Society
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• v.6 no.1
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• pp.11-15
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• 1985

Electrical conductivites of polycrystalline yttrium sesquioxides containing 1.6 and 3.2 mol % of holmium sesquioxdes have been measured from 650 to $1050^{\circ}C$ under oxygen partial pressures of $1{\times}10^{-5}$ to $2{\times}10^{-1}$ atm. Plots of log conductivity vs. 1/T at constant oxygen partial pressures are found to be linear away from the two inflection points. The low- and high-temperature dependences of conductivity show different defect structures of yttrium sesquioxide. The plots of log conductivity vs. log $PO_2$ are found to be linear at $PO_{2'}$s of $10^{-5}$ to $10^{-1} atm. The electrical conductivity dependences on $PO_2$ are found to be $1}5.3$ at $950-1050^{\circ}C$, $\frac{6}{1}$ at $800-950^{\circ}C$ and ($\frac{6.2}{1}$) - ($\frac{6.5}{1}$) at $650-800^{\circ}C$, respectively. The defect structures and conduction mechanisms have been suggested.

• Journal of the Korean Ceramic Society
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• v.24 no.2
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• pp.179-185
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• 1987

The microstructure and the electrical conductivity of MgO-doped Cr2O3 were investigated as a function of oxygen partial presure, temperature, and MgO content. The grain size was estimated about 1.0$\mu\textrm{m}$. The solubility limit is increased with oxygen partial pressure. Above the solubility limit of MgO in Cr2O3, the spinel phase(MgCr2O4) is formed by the reaction of MgO and Cr2O3. The electrical conductivity of MgO-doped Cr2O3 within the solubility limit is increased with MgO content. Above the solubility limit, however, it is decreased with increasing MgO content because of the formation of the spinel phase.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1403-1413
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• 1996

• Bulletin of the Korean Chemical Society
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• v.13 no.3
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• pp.248-252
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• 1992

$ZrO_2-dopedYb_2O_3solid$ solutions containing 1, 3, 5, 7 and 9 mol% $ZrO_2were$ synthesized from spectroscopically pure $Yb_2O_3$ and $ZrO_2$ powders and found to be rare earth C-type structure by XRD technique. Electrical conductivities were measured as a function of temperatures from 700 to $1050^{\circ}C$ and oxygen partial pressures from 1${\times}$$10^-5$ to 2${\times}$ $10^-1$atm. The electrical conductivities depend simply on temperature and the activation energies are determined to be 1.56-1.68 $_eV$. The oxygen partial pressure dependence of the electrical conductivity shows that the conductivity increases with increasing oxygen partial pressure, indicating p-type semiconductor. The $PO_2$ dependence of the system is nearly power of 1/4. It is suggested from the linearity of the temperature dependence of electrical conductivity and only one value of 1/n that the solid solutions of the system have single conduction mechanism. From these results, it is concluded that the main defects of the system are negatively doubly charged oxygen interstitial in low. $ZrO_2doping$ level and negatively triply charged cation vacancy in high doping level and the electrical conduction is due to the electronic hole formed by the defect structure.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.271-279
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• 2000

5 m/o Yb-doped SrCeO3 proton conductor was prepared by a solid state reaction method and its total electriccal conductivity measured as a function of both oxygen partial pressure and water vapor partial pressure in the temperature range of 500~100$0^{\circ}C$. From the total conductivity have been deconvoluted the partial conductivities of oxide ions, protons, and holes, respectively, on the basis of the defect model proposed. The equilibrium constant of hydrogen-dissolution reaction, proton concentration, and mobilities of oxygen vacancies and protons have subsequently been evaluated. It is verified that SrCe1-xYbxO3 is a mixed conductor of holes, protons and oxide ions and the proton conduction prevails as temperature decreases and water vapor pressure increases. The heat of water dissolution takes a representative value of $\Delta$HoH=-(140$\pm$20) kJ/mol-H2O, but tends to be less negative with increasing temperature. Migration enthalpies of proton and oxygen vacancy are extracted as 0.83$\pm$0.10 eV and 0.81$\pm$0.01 eV, respectively.

• Journal of the Korean Ceramic Society
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• v.24 no.2
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• pp.123-132
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• 1987

Yttria-stabilized zirconia with erbia-lanthana were investigated with respect to the amount of Ln2O3 (Ln; Er, La) addition in the range of 0.5∼5 mol% to the base composition of 8 mol% yttriazirconia. Following analysis and measurement were adopted for the characterization of synthesizes of solid electrolyte; phase transformation, lattice parameter, crystallite size, relative density, chemical composition and SEM/EDS. Electrical conductivity by two-probe method versus temperature from 350$^{\circ}C$ to 800$^{\circ}C$ and frequency in the range of 5Hz∼13MHz by complex impedance method was also conducted together with the determination of oxygen ion transference number by EMF method for the evaluation of their electrical properties. The results were as followsing; Electrical conductivity were decreased with increase in Ln2O3 content, but their activation energies increased. In the case of La2O3 addition, espicially, its electrical conductivity was decreased owing to the segregation of second phases at the grain-boundary. Grain-boundary conductivity of the specimen contained 0.5 mol% Er2O3 exhibited a maximum conductivity among thecompositions experimented. However, their bulk conductivities decreased in both case. Oxygen ion transference number was also reduced with decrease in oxygen partial pressure. For example, in the case of Er2O3 addition it retained value in the range of 0.97∼0.94 abvove 4.74${\times}$10-2in oxygen partial pressure. With the increase in the quantities of the evaporation of additive components, the crystallite size of stabilized zirconia decreased, and their relative density also reduced owing to the formation of porosity in their matrices. In the case of La2O3 the sinterbility was improved in the limited amount of addition up to 0.5 mol%, in the same range of addition the strength of sintered bodies were improved perhaps owing to the precipitation of metastable tetragonal phase in the fully stabilized zirconia.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.136-140
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• 1998

This work demonstrates a method for modeling of electrical conductivity in high-temperature proton-conducting oxides. Total conductivity was calculated assuming that it comprises partial conductivities contributed by protons, oxygen ions and electron holes. From the polt $\sigma_{tot}$ vs. $po_2\;{1/4}$ in wet atmosphere, thermodynamic and kinetic parameters were obtained representing transport properties such as concentration and mobility of the charge-carrying defects. The formulas for the calculation of partial conduction were derived based on the defect structure of HTPCs. Illustrative calculation were made for $SrCe_{0.95}Yb_{0.05}O_{2.975}$ system.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.1-7
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• 2005

Thin films of vanadium oxide(VO/sub x/) were deposited by r.f. magnetron sputtering from V₂O/sub 5/ target with oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% and in situ annealed in vacuum at 400℃ for 1h and 4h. Crystal structure, chemical composition, molecular structure, optical and electrical properties of films were characterized through XRD, XPS, RBS, FTIR, optical absorption and electrical conductivity measurements. The films as-deposited are amorphous, but 0%O₂ films annealed for time longer than 4h and 8% O₂ films annealed for time longer than 1h are polycrystalline. As the oxygen partial pressure is increased the films become more stoichiometric V₂O/sub 5/. When annealed at 400℃, the as-deposited films are reduced to a lower oxide. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly at wavelength shorter than about 550nm. Electrical conductivity and thermal activation energy are increased with increasing the annealing time and with decreasing the oxygen partial pressure.

• Korean Journal of Metals and Materials
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• v.56 no.11
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• pp.822-828
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• 2018

P-type Ce/Yb-filled skutterudites were synthesized, and their charge transport and thermoelectric properties were investigated with partial double filling and charge compensation. In the case of $(Ce_{1-z}Yb_z)_{0.8}Fe_4Sb_{12}$ without Co substitution, the marcasite ($FeSb_2$) phase formed alongside the skutterudite phase, but the generation of the marcasite phase was inhibited by increasing Co concentration. The electrical conductivity decreased with increasing temperature, exhibiting degenerate semiconductor behavior. The Hall and Seebeck coefficients were positive, which confirmed that the specimens were p-type semiconductors with holes as the major carriers. The carrier concentration decreased as the concentration of Ce and Co increased, which led to decreased electrical conductivity and increased Seebeck coefficient. The thermal conductivity decreased due to a reduction in electronic thermal conductivity via Co substitution, and due to decreased lattice thermal conductivity via double filling of Ce and Yb. $(Ce_{0.25}Yb_{0.75})_{0.8}Fe_{3.5}Co_{0.5}Sb_{12}$ exhibited the greatest dimensionless figure of merit (ZT = 0.66 at 823 K).

• International Journal of Advanced Culture Technology
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• v.3 no.1
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• pp.46-51
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• 2015

The mechanical and electrical properties of aluminium alloy 6061 are reported in this present work. Aluminium alloys were homogenized at $550^{\circ}C$, for 5 hours and cooled in the furnace. The different thickness reductions of 60-90% on homogenized aluminium alloy plates were achieved by cryo-rolling. Later, the as rolled samples were aged by solution treatment at the temperatures of $520^{\circ}C$ for 1 hour, water quenched; subsequently aged at $160^{\circ}C$ for 8-24 hours and partial aged (not solution treatment) at $160^{\circ}C$ for 8- 24 hours. Mechanical and electrical properties of samples were investigated. The experimental result showed that the microhardness of cryo-rolled samples were increase with increasing the percentage of the thickness reduction. Moreover, the microhardness of cryo-rolled, aged by solution treatment samples were higher than those of the cryo-rolled and cryo-rolled, partial aged samples. The cryo-rolled alloys subjected to full aged at $160^{\circ}C$ for 24 hours exhibited the hardness of 125 HV and electrical conductivity values was 45.76 %IACS and the cryo-rolled alloys subjected to partial aged at $160^{\circ}C$ for 20 hours exhibited the hardness of 67 HV and electrical conductivity values was 49.67 %IACS.