• 한국수소및신에너지학회논문집
• /
• 제25권6호
• /
• pp.594-601
• /
• 2014

Rare-earth (RE) nitrides can be used as magnetocaloric materials in low temperature. They exhibit ferromagnetism and have Curie temperature in the region from 6 to 70 K. In this study, Holmium nitride (HoN) nano particles were prepared through plasma arc discharge technique and their magnetocaloric properties were studied. Nitrogen gas ($N_2$) was employed as an active element for arc discharge between two electrodes maintained at a constant current. Also, it played an important role not only as a reducing agent but also as an inevitable source of excited nitrogen molecules and nitrogen ions for the formation of HoN phase. Partial pressure of $N_2$ was systematically varied from 0 to 28,000 Pa in order to obtain single phase of HoN with minimal impurities. Magnetic entropy change (${\Delta}S_m$) was calculated with data set measured by PPMS (Physical Property Measurement System). The as-synthesized HoN particles have shown a magnetic entropy change ${\Delta}S_m$) of 27.5 J/kgK in applied field of 50,000 Oe at 14.2 K thereby demonstrating its ability to be applied as an effective magnetic refrigerant towards the re-liquefaction of hydrogen.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2001년도 추계학술발표회 초록집
• /
• pp.35-35
• /
• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• 한국전기전자재료학회논문지
• /
• 제11권10호
• /
• pp.940-945
• /
• 1998

In this paper, we obtained the data, which is required in training the neural network and diagnosing the degradation degree, by introducing the AE detection that is effective method in ordinary degradation diagnosis on activation. Aa the results of generalization tests by appling neural network to the unknown AE patterns obtained from two kinds of specimen, firstly as to evaluate an objective performance of neural network, the recognition ration for no-void specimen and 1[mm] -void specimen are appeared to be 98.9% and 92.5%, respectively. Also, in the evaluation of the adaptability of neural network with a new type of 0.2[mm] -void specimen, it is confirmed that the result appears to be 64% of recognition ratio at 94% of confidence interval coefficient in expectation output 0.2. On the other hand, the recognition capability of the neural network was confirmed by data from no-void and 1[mm] void specimen. The results prove the promising possibility of the application of ANN to discriminate specific void affecting as main degradation source at partial discharge condition in insulator containing multi-void by accummulated data base.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.464-465
• /
• 2007

Solid insulation exposed to voltage is degraded by electrical tree process. And the degradation of the insulation is accelerated by voltage application. For this experimental, specimen of electrical tree model is made by XLPE (cross-linked polyethylene). And the size of the specimen is $7*5*7\;mm^3$. Distance of needle and plane is 2 mm. Voltages applied for acceleration test are 12 kV to 15 kV. And distribution characteristic of degraded stage is studied too. As a PD detecting and data process, discharge data acquire from PD detecting system (Biddle instrument). The system presents statistical distribution as phase resolved. Moreover the processing time of electrical tree is recorded to know the speed of degradation according to voltage.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
• /
• pp.508-508
• /
• 1996

;The growth of films have considerable interest in the field of superlattice structured multi-layer epitaxy led to realization of new devices concepts. Molecular beam epitaxy (MBE) with in situ observation by reflection high-energy electron diffraction (RHEED) is a key technology for controlled layered growth on the atomic scale in oxide crystal thin films. Also, the combination of radical oxygen source and MBE will certainly accelerate the progress of applications of oxides. In this study, the growth process of single crystal films using by MBE method is discussed taking the oxide materials of Bi-Sr-Ca-Cu family. Oxidation was provided by a flux density of activated oxygen (oxygen radicals) from an rf-excited discharge. Generation of oxygen radicals is obtained in a specially designed radical sources with different types (coil and electrode types). Molecular oxygen was introduced into a quartz tube through a variable leak valve with mass flowmeter. Corresponding to the oxygen flow rate, the pressure of the system ranged from $1{\;}{\times}{\;}10^{-6}{\;}Torr{\;}to{\;}5{\;}{\times}{\;}10^{-5}$ Torr. The base pressure was $1{\;}{\times}{\;}10^{-10}$ Torr. The growth of Bi-oxides was achieved by coevaporation of metal elements and oxygen. In this way a Bi-oxide multilayer structure was prepared on a basal-plane MgO or $SrTiO_3$ substrate. The grown films compiled using RHEED patterns during and after the growth. Futher, the exact observation of oxygen radicals with MBE is an important technology for a approach of growth conditions on stoichiometry and perfection on the atomic scale in oxide. The oxidization degree, which is determined and controlled by the number of activated oxygen when using radical sources of two types, are utilized by voltage locked loop (VLL) method. Coil type is suitable for oxygen radical source than electrode type. The relationship between the flux of oxygen radical and the rf power or oxygen partial pressure estimated. The flux of radicals increases as the rf power increases, and indicates to the frequency change having the the value of about $2{\times}10^{14}{\;}atoms{\;}{\cdots}{\;}cm^{-2}{\;}{\cdots}{\;}S^{-I}$ when the oxygen flow rate of 2.0 seem and rf power 150 W.150 W.

• 전자공학회논문지SC
• /
• 제40권1호
• /
• pp.39-44
• /
• 2003

휴대용 전자기기가 많이 개발되고 보급됨에 따라서 배터리의 중요성은 점점 커져가고 있다. 기기의 수명을 늘이고자 고전력밀도의 배터리를 요구하게 되었고, 현재에는 리튬-이온 배터리를 많이 사용하게 되었다. 단위체적 및 중량당의 전력밀도 부분에서는 기존에 사용하던 배터리보다 성능이 우수하지만, 방전전압이 감소하는 특성이 있기 때문에 배터리의 수명을 최대한 늘리기 위해서는 이 특성에 알맞은 컨버터가 필요하다. 그래서 리튬-이온 배터리를 사용하는 휴대용 저전력 전자기기의 전원부로써 용량성 아이들링 SEPIC을 제안하였다. 승압과 강압이 가능한 SEPIC의 특성을 가지면서, 추가된 스위치와 다이오드를 통해서 스위치에 부분적인 소프트 전환을 가능하게 하기 때문에, 스위칭 주파수의 증가를 가능하게 한다. 본 논문에서는 직류 정상상태의 전압전환비, 동작모드별 회로 및 회의특성을 분석하고 구현하였다.

• 전기화학회지
• /
• 제3권2호
• /
• pp.115-120
• /
• 2000

양극 물질로 산화바나듐 박막, 고체전해질로는 LiPON 박막 그리고 음극 물질로는 리튬 금속 박막을 선택하여 $Li/LiPON/V_2O_5/Pt$ 구조의 전고상 박막 전지를 제작하였고 전지 특성을 평가하였다. 산화바나듐 박막은 여러 산소 분압에서 직류 반응성 스퍼터링으로 증착하여 전기화학적 특성을 분석한 결과 $20\%\;O_2/Ar$비에서 가장 우수한 가역 특성을 나타내었다. 직류 반응성 스퍼터링에 의해 산화바나듐 박막을 제작한 후 진공을 그대로 유지한 상태에서 r.f. 반응성 스퍼터링에 의해 LiPON 고체전해질 박막을 증착하였다. 그 후 dry room내에서 진공 열증착법에 의해 리튬 금속 박막을 증착하여 전고상의 박막 전지를 제작하였다. $Li/LiPON/V_2O_5$ 박막 전지를 전압 범위와 전류 밀도를 변화시켜 충방전 시험을 행한 결과 $7{\mu}A/cm^2$의 전류 밀도와 3.6-2.7 V의 전압범위에서 가장 우수한 가역 특성을 나타내었다. $Li/LiPON/V_2O_5$박막 전지로 초시계를 구동 시켰으며 이는 in-situ공정에 의해 제작된 박막 전지가 소자 에너지원으로의 응용 가능성을 보여 주었다.

• 대한환경공학회지
• /
• 제29권8호
• /
• pp.922-929
• /
• 2007

암모니아의 질산염으로의 산화는 2개의 산화과정으로 구분된다. 나이트로좀머나스(Nitrosomonas)에 의한 암모니아의 아질산염으로의 산화와 나이트로박터(Nitrobacter)에 의한 아질산염의 질산염으로의 산화이다. 아질산염 축적 과정을 거치는 질소의 제거는 포기를 위한 에너지의 절약, 탈질과정에서 투입되는 유기물의 절약 및 발생되는 슬러지의 양을 감소시킬 수 있는 다양한 장점들을 가지고 있다. 본 연구에서는 아질산염 축적의 조건들을 찾기 위해 막분리 장치를 장착한 생물분리막 반응조(MBR)가 사용되었다. 생물 분리막 반응조는 성장속도가 늦어 쉽게 유실되어질 수 있는 독립영양 질산화 박테리아를 반응조내 충분히 유지시키는데 중요한 역할을 한다. 반응조내 용존산소와 암모니아의 농도를 변화시키며 아질산염 축적의 영향인자들을 조사하였다. 연구의 결과로 반응조내 높은 암모니아 농도는 아질산염 축적을 시작하는데 매우 효과적이었으며, 이러한 효과는 반응조내 낮은 용존산소 농도가 동시에 존재할 시 더욱 강화되었다. 낮은 용존산소 농도 $c'_{O2}<0.3$ $mgL^{-1}$ $O_2$와 높은 암모니아 농도 $c_{NH3}=6.3\sim14.9$ $mgL^{-1}$ $NH_3N$에서 아질산염 축적율 74%에 달성될 수 있었다. 특히 아질산염 축적이 많은 연구자들이 제시하는 것처럼 생물막 반응조에서 뿐만 아니라, MBR 반응조에서도 일어날 수 있음을 밝힌 것은 본 연구의 중요한 성과라 할 것이다.