• Title/Summary/Keyword: Partial Emission Pump

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Design of partial emission type liquid nitrogen pump

  • Lee, Jinwoo;Kwon, Yonghyun;Lee, Changhyeong;Choi, Jungdong;Kim, Seokho
    • Progress in Superconductivity and Cryogenics
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    • v.18 no.1
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    • pp.64-68
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    • 2016
  • High Temperature Superconductor power cable systems are being developed actively to solve the problem of increasing power demand. With increases in the unit length of the High Temperature Superconductor power cable, it is necessary to develop highly efficient and reliable cryogenic pumps to transport the coolant over long distances. Generally, to obtain a high degree of efficiency, the cryogenic pump requires a high pressure rise with a low flow rate, and a partial emission type pump is appropriate considering its low specific speed, which is different from the conventional centrifugal type, full emission type. This paper describes the design of a partial emission pump to circulate subcooled liquid nitrogen. It consists of an impeller, a circular case and a diffuser. The conventional pump and the partial emission pump have different features in the impeller and the discharge flow passage. The partial emission pump uses an impeller with straight radial blades. The emission of working fluid does not occur continuously from all of the impeller channels, and the diffuser allows the flow only from a part of the impeller channels. As the area of the diffuser increases gradually, it converts the dynamic pressure into static pressure while minimizing the loss of total pressure. We used the known numerical method for the optimum design process and made a CFD analysis to verify the theoretical performance.

UV emission characterization of ZnO thin films depending on the variation of oxygen pressure (분위기 산소압변화에 따른 ZnO박막의 UV발광 특성분석)

  • Bae, Sang-Hyuck;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1523-1525
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    • 1999
  • ZnO is a wide-bandgap II-VI semiconductor and has a variety of potential application. ZnO exhibits good piezoelectric, photoelectric and optic properties, and is good for a electroluminescence device. ZnO films have been deposited at (0001) shappire by PLD technique. Chamber was evacuated by turbomolecular pump to a base pressure of $1{\times}10^{-6}$ Torr Nd:YAG pulsed laser was operated at ${\lambda}=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C$ to $700^{\circ}C$. At aleady works, UV emission and green-yellow PL was observed. In this work, ZnO films showed UV, violet, green and yellow emissions. UV emission was enhanced by increasing partial oxygen pressure. We investigated relationship between partial oxygen pressure and UV emission.

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