• Title/Summary/Keyword: Parasitic inductance

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The Role of a Wiring Model in Switching Cell Transients: the PiN Diode Turn-off Case

  • Jedidi, Atef;Garrab, Hatem;Morel, Herve;Besbes, Kamel
    • Journal of Power Electronics
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    • v.17 no.2
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    • pp.561-569
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    • 2017
  • Power converter design requires simulation accuracy. In addition to the requirement of accurate models of power semiconductor devices, this paper highlights the role of considering a very good description of the converter circuit layout for an accurate simulation of its electrical behavior. This paper considers a simple experimental circuit including one switching cell where a MOSFET transistor controls the diode under test. The turn-off transients of the diode are captured, over which the circuit wiring has a major influence. This paper investigates the necessity for accurate modeling of the experimental test circuit wiring and the MOSFET transistor. It shows that a simple wiring inductance as the circuit wiring representation is insufficient. An adequate model and identification of the model parameters are then discussed. Results are validated through experimental and simulation results.

Extraction of Extrinsic Parameters for GaAs MESFET by S-parameters (S-파라미터를 이용한 GaAs MESFET의 외부 파라미터 추출)

  • 조영송;나극환;박광호;신철재
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.2 no.2
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    • pp.30-37
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    • 1991
  • The modified method which determines the extrinsic parameters at the small signal equivalent model for GaAs MESFET is presented. It is important that extrinsic parameters are completely eliminated, in order to calculate exact intrinsic parameters. Extrinsic circuit is established by transmission lines, parasitic inductors and capacitors. After these are extracted by S-parameters, intrinsic parameters are calculated. Especially, frequency dependence of parastic inductance and capacitance is considerally constant.

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Reduction of Radiated Noise of EMI using Shielding Methods of High Frequency Transformer (고주파 변압기 차폐에 따른 EMI 방사 노이즈 저감에 관한 연구)

  • Lee Wan-Yun;Chung Gyo-Bum
    • Proceedings of the KIPE Conference
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    • 2004.07b
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    • pp.811-814
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    • 2004
  • Radiated noise from high frequency transformers (HTFs) of switching mode power supply is mainly caused by the leakage inductance and the parasitic capacitance of HTFs. Generally, the radiated noise can be reduced by adding snubbers to switching power circuits or shielding HTFs. Radiated noise, however, is mainly affected by the shielding method. In this paper, the various shielding methods to reduce the radiated noise of EMI are analyzed, compared in the experimental studies. And it is proved that the radiated noise can be reduced according to the shielding methods of HFTs and the electrical connection between shields and power circuit.

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Screening bonding wire and the wideband characterization to reduce crosstalk between high density bonding wires (고밀도 본딩와이어간의 혼신감소를 위한 차폐 본딩왕이어 및 광대역 해석)

  • 이상동;이해영
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.7
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    • pp.92-98
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    • 1996
  • parallel bonding wires separaated with a screeing bonding wire are proposed and characterized in order to redue mutual coupling and parasitics of high-speed and high-density device packaging. The mehtod of moments (MoM) with the incorporation of the ohmic loss has been used in a wide range of frequencies. From the calculated results, we have found that the screening bonding wire effectively reduces inductive and capacitive crostalk levels more than 3dB. the parasitic self inductance is also reduced more than 12% by the screening effect. Therefore, for a general VLSi package, the packaging density can be increased more than 30% using the screening bonding wire. This screeing bonding wire and the analysis can be effectively used to reduce crosstalk and increase packaging density of high density devices.

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25-Gb/s Optical Transmitter with Si Ring Modulator and CMOS Driver

  • Rhim, Jinsoo;Lee, Jeong-Min;Yu, Byung-Min;Ban, Yoojin;Cho, Seong-Ho;Choi, Woo-Young
    • Journal of the Optical Society of Korea
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    • v.18 no.5
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    • pp.564-568
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    • 2014
  • We present a 25-Gb/s optical transmitter composed of a Si ring modulator and CMOS driver circuit. The Si ring modulator is realized with 220-nm Si-on-insulator process and the driver circuit with 65-nm CMOS process. The modulator and the driver are hybrid-integrated on the printed circuit board with bonding wires. The driver is designed so that the parasitic bonding wire inductance provides enhanced driver bandwidth. The transmitter successfully demonstrates 25-Gb/s operation.

A New Soft Switching DC-DC Converter using Two Transformers (두 개의 변압기를 이용한 새로운 소프트 스위칭 방식의 DC-DC 컨버터)

  • Lee Darl-Woo;Ahn Tae-Young
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.54 no.9
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    • pp.444-449
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    • 2005
  • This paper proposes the new soft switching DC-DC converter. We reported the experimental results of the new soft switching DC-DC converter. The proposed converter is to resonate between the leakage inductance of the transformer and the parasitic capacitances of the main switches for zero voltage switching. The voltage stresses of the two switches are the input voltage, it can improve the efficiency and a reduced height used two transformers. Theoretical analysis of the converter along with experimental results is provided. Finally, a 3.3V/20A prototype converter operation at 100kHz is built and experimental waveform verifies the analysis.

A Study on Efficiency and Characteristic of Zero Voltage Switched Half-Bridge Converter and Forward Converter (영전압 스위칭 하프브리지 컨버터와 포워드 컨버터의 효율 및 특성에 관한 연구)

  • Seo, J.K.;Kim, Y.;Baek, S.H.;Kwon, S.D.
    • Proceedings of the KIEE Conference
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    • 1998.11a
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    • pp.147-149
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    • 1998
  • In this paper, zero voltage switched half bridge converter and an active-clamped, zero voltage switched forward converter equipped with self-driven synchronous rectifier is designed and investigated for high efficiency BC-DC converter. A synchronous rectifier is has a lower conduction power loss than shottky diode rectifier. The purpose of this paper is to investigate the effect of parasitic inductance in a synchronous rectifier of DC-DC converters and examine overall efficiency of zero voltage switched DC-DC converters.

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A Study on Battery Chargers for the next generation high speed train using the Phase-shift Full-bridge DC/DC Converter (위상전이 풀-브리지 DC/DC 컨버터를 이용한 차세대 고속 전철용 Battery Charger에 관한 연구)

  • Cho, Han-Jin;Lee, Won-Cheol;Lee, Sang-Seok;Kim, Tae-Hwan;Won, Chung-Yuen
    • Proceedings of the KSR Conference
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    • 2009.05b
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    • pp.623-628
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    • 2009
  • There is an increasing demand for efficient high power/weight auxiliary power supplies for use on high speed traction application. Many new conversion techniques have been proposed to reduce the voltage and current stress of switching components, and the switching losses in the traditional pulse width modulation(PWM) converter. Especially, the phase shift full bridge zero voltage switching PWM techniques are thought most desirable for many applications because this topology permits all switching devices to operate under zero voltage switching(ZVS) by using circuit parasitic components such as leakage inductance of high frequency transformer and power device junction capacitance. The proposed topology is found to have higher efficiency than conventional soft-switching converter. Also it is easily applicable to phase shift full bridge converter by applying an energy recovery snubber consisted of fast recovery diodes and capacitors.

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A Study on the Battery Charger for Next Generation High Speed Train (차세대 고속 전철용 Battery Charger 에 관한 연구)

  • Jeong, Han-Jeong;Lee, Won-Cheol;Lee, Sang-Seok;Paik, Jin-Sung;Won, Chung-Yuen
    • Proceedings of the KSR Conference
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    • 2008.11b
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    • pp.321-324
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    • 2008
  • Recently, there is an increasing demand for efficient high power/weight auxiliary power supplies for use on high speed traction application. many new conversion techniques have been proposed to reduce the voltage and current stress of switching components, and the switching losses in the traditional pulse width modulation(PWM) converter. Among them, the phase shift full bridge zero voltage switching PWM techniques are thought most desirable for many applications because this topology permits all switching devices to operate under zero voltage switching(ZVS) by using circuit parasitic components such as leakage inductance of high frequency transformer and power device junction capacitance. The proposed topology is found to have higher efficiency than conventional soft-switching converter. Also it is easily applicable to phase shift full bridge converter by applying an energy recovery snubber consisted of fast recovery diodes and capacitors.

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SiC Motor Drive for Elevator System (엘리베이터 시스템을 위한 SiC 권상기 드라이브)

  • Gwon, Jin-Su;Moon, Seok-Hwan;Kim, Ju-Chan;Lee, Joon-Min
    • The Transactions of the Korean Institute of Power Electronics
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    • v.24 no.3
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    • pp.147-152
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    • 2019
  • With the recent emphasis on the importance of energy conservation, studies on high-efficiency elevator systems are being continuously conducted. Therefore, pulse width modulation converters are commonly used in traction drives on elevator systems. Wide bandgap devices have been increasingly commercialized, and their application to power conversion systems, such as renewable and energy storage system, has been gradually increasing. In this study, a SiC inverter for an elevator traction drive is investigated. In particular, an inverter is designed to minimize stray and parasitic inductance. Input and output filters are designed by considering switching frequency. The designed SiC inverter reduces volume by approximately 32% compared with that of a Si inverter, and power converter efficiency is over 98.8%.