• 제목/요약/키워드: Parameters Optimization

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Optimized Design of Low Voltage High Current Ferrite Planar Inductor for 10 MHz On-chip Power Module

  • Bae, Seok;Hong, Yang-Ki;Lee, Jae-Jin;Abo, Gavin;Jalli, Jeevan;Lyle, Andrew;Han, Hong-Mei;Donohoe, Gregory W.
    • Journal of Magnetics
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    • v.13 no.2
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    • pp.37-42
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    • 2008
  • In this paper, design parameters of high Q (> 50), high current inductor for on-chip power module were optimized by 4 Xs 3 Ys DOE (Design of Experiment). Coil spacing, coil thickness, ferrite thickness, and permeability were assigned to Xs, and inductance (L) and Q factor at 10 MHz, and resonance frequency ($f_r$) were determined Ys. Effects of each X on the Ys were demonstrated and explained using known inductor theory. Multiple response optimizations were accomplished by three derived regression equations on the Ys. As a result, L of 125 nH, Q factor of 197.5, and $f_r$ of 316.3 MHz were obtained with coil space of $127\;{\mu}m$, Cu thickness of $67.8\;{\mu}m$, ferrite thickness of $130.3\;{\mu}m$, and permeability 156.5. Loss tan ${\delta}=0$ was assumed for the estimation. Accordingly, Q factor of about 60 is expected at tan ${\delta}=0.02$.

Analysis of $f_T$ and $f_{max}$ Dependence on Unit Gate Finger Width for RF Performance Optimization of MOSFETs (MOSFET의 RF 성능 최적화를 위한 단위 게이트 Finger 폭에 대한 $f_T$$f_{max}$의 종속데이터 분석)

  • Cha, Ji-Yong;Cha, Jun-Young;Jung, Dae-Hyoun;Lee, Seong-Hearn
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.9
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    • pp.21-25
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    • 2008
  • In this study, to maximize RF performance of MOSFETs, $f_T$ and $f_{max}$ dependent data on $W_u$ are measured and newly analyzed by extracting small-signal model parameters. From the physical analysis results, it is found that a peak value of $f_T$ is generated by $W_u$-independent parasitic gate-bulk capacitance at narrow $W_u$ and the wide width effect of reducing the increasing rate of transconductance at wide $W_u$. In addition, it is revealed that a maximum value of $f_{max}$ is caused by the non-quasi-static effect that the gate resistance is greatly reduced at narrow $W_u$ and becomes constant at wide $W_u$.

Improvement of the Throwing Power (TP) and Thickness Uniformity in the Electroless Copper Plating (무전해 동도금 Throwing Power (TP) 및 두께 편차 개선)

  • Seo, Jung-Wook;Lee, Jin-Uk;Won, Yong-Sun
    • Clean Technology
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    • v.17 no.2
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    • pp.103-109
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    • 2011
  • The process optimization was carried out to improve the throwing power (TP) and the thickness uniformity of the electroless copper (Cu) plating, which plays a seed layer for the subsequent electroplating. The DOE (design of experiment) was employed to screen key factors out of all available operation parameters to influence the TP and thickness uniformity the most. It turned out that higher Cu ion concentration and lower plating temperature are advantageous to accomplish uniform via filling and they are accounted for based on the surface reactivity. To visualize what occurred experimentally and evaluate the phenomena qualitatively, the kinetic Monte Carlo (MC) simulation was introduced. The combination of neatly designed experiments by DOE and supporting theoretical simulation is believed to be inspiring in solving similar kinds of problems in the relevant field.

A Tree Regularized Classifier-Exploiting Hierarchical Structure Information in Feature Vector for Human Action Recognition

  • Luo, Huiwu;Zhao, Fei;Chen, Shangfeng;Lu, Huanzhang
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.11 no.3
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    • pp.1614-1632
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    • 2017
  • Bag of visual words is a popular model in human action recognition, but usually suffers from loss of spatial and temporal configuration information of local features, and large quantization error in its feature coding procedure. In this paper, to overcome the two deficiencies, we combine sparse coding with spatio-temporal pyramid for human action recognition, and regard this method as the baseline. More importantly, which is also the focus of this paper, we find that there is a hierarchical structure in feature vector constructed by the baseline method. To exploit the hierarchical structure information for better recognition accuracy, we propose a tree regularized classifier to convey the hierarchical structure information. The main contributions of this paper can be summarized as: first, we introduce a tree regularized classifier to encode the hierarchical structure information in feature vector for human action recognition. Second, we present an optimization algorithm to learn the parameters of the proposed classifier. Third, the performance of the proposed classifier is evaluated on YouTube, Hollywood2, and UCF50 datasets, the experimental results show that the proposed tree regularized classifier obtains better performance than SVM and other popular classifiers, and achieves promising results on the three datasets.

Low-Temperature Si and SiGe Epitaxial Growth by Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition (UHV-ECRCVD)

  • Hwang, Ki-Hyun;Joo, Sung-Jae;Park, Jin-Won;Euijoon Yoon;Hwang, Seok-Hee;Whang, Ki-Woong;Park, Young-June
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.422-448
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    • 1996
  • Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.

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A Study on Efficiency Improvement and Optimization of Operating Characteristics of Pulsed $CO_2$ Laser System using Ring Blower (링 블로우를 이용한 펄스형 $CO_2$ 레이저 시스템의 효율 향상과 동작 특성에 관한 연구)

  • Kim, D.H.;Chung, H.J.;Park, S.J.;Joung, J.H.;Lee, D.H.;Kim, H.J.;Cho, J.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.57-60
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    • 2000
  • In this paper, it is purpose to develop a pulsed $CO_2$ laser with stable output at pulse repetition rate range of 2 KHz. We used a IGBT as a switching device. The laser cavity was fabricated as an axial and water cooled type. It was used a ring blower to increase a cooling effect The laser performance characteristics as parameters, such as pulse repetition rate, gas pressure have been investigated. The experiment was done under 3 electrode-type instead of 2 electrode-type. To achieve 3 electrode-type, we used two pulse-transformers which is operated parallel. As a result, the maximum output was about 28 W at the total pressure of 20 Torr, the gas mixture $Co_2$:$N_2$:He=1:9:15 and the pulse repetition rate of 1300 Hz.

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Optimization of Acquisition Time of Beta-Gamma Coincidence Counting System for Radioxenon Measurement (방사성제논 탐지를 위한 베타-감마 동시 계측시스템의 측정시간 최적화)

  • Byun, Jong-In;Park, Hong-Mo;Choi, Hee-Yeoul;Song, Myeong-Han;Yun, Ju-Yong
    • Journal of Radiation Protection and Research
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    • v.40 no.3
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    • pp.181-186
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    • 2015
  • Measurement of xenon radioisotopes from nuclear fission is a key element for monitoring underground nuclear weapon tests. $^{131m}Xe$, $^{133}Xe$, $^{133}mXe$ and $^{135}Xe$ in the air can be detected via low background systems such as a beta-gamma coincidence counting system. Radioxenon monitoring is performed through air sampling, xenon extraction, measurement and spectrum analysis. The minimum detectable concentration of $^{135}Xe$ can be significantly variable depending on the sampling time, extraction time and data acquisition time due to its short half-life. In order to optimize the acquisition time with respect to certain experimental parameters such as sampling and xenon extraction, theoretical approach and experiment using SAUNA system were performed to determine the time to minimize the minimum detectable concentration, which the results were discussed.

Design and Development of Micro Combustor (II) - Design and Test of Micro Electric Spark discharge Device for Power MEMS - (미세 연소기 개발 (II) - 미세동력 장치용 미세 전극의 제작과 성능평가 -)

  • Gwon, Se-Jin;Lee, Dae-Hun;Park, Dae-Eun;Yun, Jun-Bo;Han, Cheol-Hui
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.26 no.4
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    • pp.524-530
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    • 2002
  • Micro electric spark discharge device was fabricated on a FOTURAN glass wafer using MEMS processing technique and its performance of electron discharge and subsequent formation of ignition kernel were tested. Micro electric spark device is an essential subsystem of a power MEMS that has been under development in this laboratories. In a combustion chamber of sub millimeter scale depth, spark electrodes are formed by electroplating Ni on a base plate of FOTURAN glass wafer. Optimization of spark voltage and spark gap is crucial for stable ignition and endurance of the electrodes. Namely, wider spark gaps insures stable ignition but requires higher ignition voltage to overcome the spark barrier. Also, electron discharge across larger voltage tends to erode the electrodes limiting the endurance of the overall system. In the present study, the discharge characteristics of the proptotype ignition device was measured in terms of electric quantities such as voltage and currant with spark gap and end shape as parameters. Discharge voltage shows a little decrease in width of less than 50㎛ and increases with electrode gap size. Reliability test shows no severe damage over 10$\^$6/ times of discharge test resulting in satisfactory performance for application to proposed power MEMS devices.

Nonlinear Pitch and Torque Controller Design for Wind Turbine Generator Using Lyapunov Function (리아프노프 함수를 이용한 풍력 발전기 비선형 피치 및 토크 제어기 설계)

  • Kim, Guk-Sun;No, Tae-Soo;Jeon, Gyeong-Eon;Kim, Ji-Yon
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.36 no.10
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    • pp.1147-1154
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    • 2012
  • In this study, a method for designing blade pitch and generator torque controllers for a wind turbine generator is presented. This method consists of two steps. First, the Lyapunov stability theory is used to obtain nonlinear control laws that can regulate the rotor speed and the power output at all operating ranges. The blade pitch controller is chosen such that it always decreases a positive definite function that represents the error in rotor speed control. Similarly, the generator torque controller always decreases a positive definite function that reflects the error in power output control. Then, the simulation-based optimization technique is used to tune the design parameters. The controller design procedure and simulation results are presented using the widely adopted two-mass model of the wind turbine.

Drug resistance of bladder cancer cells through activation of ABCG2 by FOXM1

  • Roh, Yun-Gil;Mun, Mi-Hye;Jeong, Mi-So;Kim, Won-Tae;Lee, Se-Ra;Chung, Jin-Woong;Kim, Seung Il;Kim, Tae Nam;Nam, Jong Kil;Leem, Sun-Hee
    • BMB Reports
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    • v.51 no.2
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    • pp.98-103
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    • 2018
  • Recurrence is a serious problem in patients with bladder cancer. The hypothesis for recurrence was that the proliferation of drug-resistant cells was reported, and this study focused on drug resistance due to drug efflux. Previous studies have identified FOXM1 as the key gene for recurrence. We found that FOXM1 inhibition decreased drug efflux activity and increased sensitivity to Doxorubicin. Therefore, we examined whether the expression of ABC transporter gene related to drug efflux is regulated by FOXM1. As a result, ABCG2, one of the genes involved in drug efflux, has been identified as a new target for FOXM1. We also demonstrated direct transcriptional regulation of ABCG2 by FOXM1 using ChIP assay. Consequently, in the presence of the drug, FOXM1 is proposed to directly activate ABCG2 to increase the drug efflux activation and drug resistance, thereby involving chemoresistance of bladder cancer cells. Therefore, we suggest that FOXM1 and ABCG2 may be useful targets and important parameters in the treatment of bladder cancer.