• Title/Summary/Keyword: Parabolic rate law

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Effects of Si, Mn, and Cr on the dissociation rate of $Fe_3C$. (철탄화물의 분해속도에 미치는 Si, Mn 및 Cr 의 영향)

  • Kim, Dong-Ui
    • Journal of Korea Foundry Society
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    • v.5 no.3
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    • pp.13-18
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    • 1985
  • Decarburization phenomena were investigated at $800^{\circ}C$ by the $PH_2O/PH_2$ + Ar gas mixture in the case iron range which contains Si, Mn and Cr as an alloying elements. Dissociation of cementite in a matrix which contains graphitizer as Si begins at the carbon rich cementite dendrite arms. Several primary austenite $({\gamma})$ skeletons are surrounded by those nucleated graphite nodules, and that forms a limited area of nucleation region. Decarburization reactions at $800^{\circ}C$ in Fe-C, Fe-Mn-C and Fe-Cr-C alloy are followed by parabolic rate law under the gas mixture of $PH_2O/PH_2=0.01$ and the modified rate const. ${\kappa}$ were in the range of $1{\sim}6{\times}10^{-10}cm^2/s$.

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Effect of the density profile of a star on the bolometric light curve in tidal disruption events

  • Park, Gwanwoo;Kimitake, Hayasaki
    • The Bulletin of The Korean Astronomical Society
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    • v.43 no.1
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    • pp.56.1-56.1
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    • 2018
  • Tidal disruption events (TDEs) provide evidence for quiescent supermassive black holes (SMBHs) in the centers of inactive galaxies. TDEs occur when a star on a parabolic orbit approaches close enough to a SMBH to be disrupted by the tidal force of the SMBH. The subsequent super-Eddington accretion of stellar debris falling back to the SMBH produces a characteristic flare lasting several months. The theoretically expected bolometric light curve decays with time as proportional to $t^{-5/3}$. However, the light curves observed in most of the optical-UV TDEs deviate from the $t^{-5/3}$ decay rate especially at early time, while the light curves of some soft-X-ray TDEs are overall in good agreement with the $t^{-5/3}$ law. Therefore, it is required to construct the theoretical model for explaining these light curve variations consistently. In this paper, we revisit the mass fallback rates analytically and semi-analytically by taking account of the structure of the star, which is simply modeled by the polytrope. We find the relation between a polytropic index and the power law index of the mass fallback rate. We also discuss whether and how the decay curves, which we derived, fit the observed ones.

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Growth and Electrical Characteristics of Ultrathin $SiO_2$ Film Formed in an Electron Cyclotron Resonance Oxygen Plasma (ECR 산소 플라즈마에 의한 $SiO_2$ 박막의 성장 거동 및 전기적 특성)

  • 안성덕;이원종
    • Journal of the Korean Ceramic Society
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    • v.32 no.3
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    • pp.371-377
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    • 1995
  • Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

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Effect of Ga, Nb Addition on Disproportionation Kinetics of Nd-Fe-B Alloy

  • Kwon, H.W.;Yu, J.H.
    • Journal of Magnetics
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    • v.14 no.4
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    • pp.150-154
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    • 2009
  • The effect of Ga and, Nb addition on the kinetics and mechanism of the disproportionation of a Nd-Fe-B alloy were investigated by isothermal thermopiezic analysis (TPA) using $Nd_{12.5}Fe_{(81.1-(x+y))}B_{6.4}Ga_xNb_y$ (x=0 and 0.3, y= 0 and 0.2) alloys. The addition of Ga and Nb retarded the disproportionation kinetics of the Nd-Fe-B alloy significantly, and increased the activation energy of the disproportionation reaction. The disproportionation kinetics of the $Nd_{12.5}Fe_{(81.1-(x+y))}B_{6.4}Ga_xNb_y$ alloys measured under an initial hydrogen pressure of 0.02 MPa were fitted to a parabolic rate law. This suggested that during the disproportionation of $Nd_{12.5}Fe_{(81.1-(x+y))}B_{6.4}Ga_xNb_y$ alloys with an initial hydrogen pressure of 0.02 MPa, a continuous disproportionation product is formed and the overall reaction rate is limited by the diffusion of hydrogen atoms (or ions).

Preparation of Yttria Stabilized zirconia Films by the Electrochemical Vapor Deposition (전기화학증착에 의한 이트리아 안정화 지르코니아 박막의 제조)

  • 정지원;박동원;전치훈;최병진;김대룡
    • Journal of the Korean Ceramic Society
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    • v.31 no.5
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    • pp.477-484
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    • 1994
  • The yttria stabilized zirconia(YSZ) thin films for solid oxide fuel cell (SOFC) were fabricated by an electrochemical vapor deposition(EVD) technique using YCl3+ZrCl4+H2O gas system. The YSZ films were deposited under reduced pressure at the temperature of 1000~120$0^{\circ}C$ on the porous alumina substrates. The deposition rate, chemical composition and growth morphology were investigated by SEM, XRD, EDS. The growth rates of the films obeyed a parabolic rate law, representing that the growing process is controlled by an electrochemical transport through the YSZ film. The Y2O3 content of the films was about 10 mol%, equal to the composition of metal chloride reactant gases, approximately. The YSZ films were highly dense, the growing features showed columnar structure and surface morphologies were changed with the EVD conditions.

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Oxidation Kinetics of Silicon by Inductively Coupled Oxygen Plasma

  • Choi, Yong-Woo;Ahn, Jin-Hyung;Kim, Sung-Chul;Ahn, Byung-Tae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.63-64
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    • 2000
  • The low-temperature Si oxidation kinetics by inductively coupled oxygen plasma has been studied. Linear rate constants had negative values when the oxide growth rate was described by linear-parabolic growth law. The analysis of transverse-optical mode frequencies and etch rates indicated that the density of surface oxide was lower than that of bulk oxide. The oxidation kinetics could be explained qualitatively by assuming a surface layer with larger diffusion coefficient and a bulk layer with smaller diffusion coefficient.

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Dependence of tidal disruption flares on stellar density profile and orbital properties

  • Park, Gwanwoo;Hayasaki, Kimitake
    • The Bulletin of The Korean Astronomical Society
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    • v.44 no.1
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    • pp.48.2-48.2
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    • 2019
  • Tidal disruption events (TDEs) provide evidence for quiescent supermassive black holes (SMBHs) in the centers of inactive galaxies. TDEs occur when a star on a parabolic orbit approaches close enough to a SMBH to be disrupted by the tidal force of the SMBH. The subsequent super-Eddington accretion of stellar debris falling back to the SMBH produces a characteristic flare lasting several months. It is theoretically expected that the bolometric light curve decays with time as proportional to $t^{-5/3}$. However, some of the observed X-ray light curves deviate from the $t^{-5/3}$ decay rate, while some of them are overall in good agreement with the $t^{-5/3}$ law. Therefore, it is required to construct the theoretical model for explaining these light curve variations consistently. In this paper, we revisit the mass fallback rates semi-analytically by taking account of the stellar internal structure, orbital eccentricity and penetration factor. We find that the mass fallback rate is shallower than the standard $t^{-5/3}$ decay rate independently of the polytropic index, and the orbital eccentricity only changes the magnitude of the mass fallback rate. Furthermore, the penetration factor significantly can modify the magnitude and variation of mass fallback rate. We confirm these results by performing the computational hydrodynamic simulations. We also discuss the relevance of our model by comparing these results with the observed light curves.

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Oxidation Behavior of $SiC/MoSi_2$ Composites Prepared by Reaction Sintering Method (반응소결에 의하여 제조된 $SiC/MoSi_2$ 복합체의 산화 거동)

  • 양준환;한인섭;우상국;서동수
    • Journal of the Korean Ceramic Society
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    • v.31 no.12
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    • pp.1588-1598
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    • 1994
  • The SiC/MoSi2 composite materials were fabricated by infiltrating the mixture of molybdenum disilicide and metal silicon(MoSi2+Si=100) to a porous compact of silicon carbide and graphite under the vacuum atmosphere of 10-1 torr. The specimen were oxidized in dry air under 1 atm at 130$0^{\circ}C$~150$0^{\circ}C$ for 240 hours. The oxidation behavior was evaluated by the weight gain and loss per unit area of the oxidized samples. Also, SEM and XRD analysis of the oxidized surface of the samples were carried out. With increasing the MoSi2 content and oxidation temperature, the passive oxidation was found. The trend of weight gain of all samples was followed the parabolic rate law with the formation of a protective layer of cristobalite on the surface.

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Reaction diffusion and formation of$Ni_3Al$ phase at the Ni-NiAl diffusion couple (Ni-NiAl 확산대에서 $Ni_3Al$ 상의 형성과 반응확산)

  • 정승부
    • Journal of Welding and Joining
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    • v.15 no.3
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    • pp.128-135
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    • 1997
  • Reaction diffusion and formation of $Ni_3Al$phase with $L1_2$ structure have been studied in temperature range of 1432K to 1573K using the diffusion couple of (Ni-40, 5at%Al)/(Ni-14, 1at%Al) and (Ni-49, 2at%Al)/ (Nickel). The layer growth of Ni$_{3}$Al pyhase in the annealed diffusion couple was measured by optical microscope and electron probe microanalyzer (EPMA). The layer growth of $Ni_3Al$phase in diffusion zone obeyed the parabolic law without any indication of grain boundary effects. The layer growth of $Ni_3Al$phase in temperature range of 1423K to 1573K was mainly controlled by the volume diffusion mechanism. The rate of layer growth of $Ni_3Al$phase was found to be colsely related to the composition of intermetallic compound NiAl phase. The activation energy for layer growth of $Ni_3Al$phase was calculated to be 127kJ/mol.

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Preparation of $CeO_2$ Based Solid Electrolyte Thin Films by Electrochemical Vapor Deposition (전기화학증착법에 의한 $CeO_2$계 고체전해질 박막의 제조)

  • 박동원;김대룡
    • Journal of the Korean Ceramic Society
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    • v.34 no.10
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    • pp.1067-1073
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    • 1997
  • The yttria doped ceria (YDC) thin films were fabricated by electrochemical vapor deposition on the porous $\alpha$-Al2O3 substrate. The growth rates of the films obeyed a parabolic rate law, which constant was 259.0 $m^2$/hr at 120$0^{\circ}C$. As deposition temperature (above 110$0^{\circ}C$) increased, dense thin films were enhanced. Mole fraction of XYC13 had an effect upon surface morphologies. Electrical conductivity was increased with deposition temperature. The conductivity of YDC film prepared at XYC13=7.9$\times$10-2 was about 0.097 S/cm at 104$0^{\circ}C$ and the activation energy of conduction was calculated to be 26.6 kcal/mol.

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