• 제목/요약/키워드: Pair-photonic crystals

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다중노광 나노구 리소그라피를 이용한 쌍-광자결정 어레이 제작 (Fabrication of Pair-Photonic Crystal Arrays using Multiple-Exposure Nanosphere Lithography)

  • 여종빈;한광민;이현용
    • 한국전기전자재료학회논문지
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    • 제23권3호
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    • pp.245-249
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    • 2010
  • Two dimensional(2D) pair-photonic crystals (pair-PCs) have been fabricated by a multiple-exposure nanosphere lithography (MENSL) method using the self-assembled nanospheres as lens-mask patterns and the collimated laser beam as a multiple-exposing source. The arrays of the 2D pair-PCs exhibited variable lattice structures and shape the control of rotating angle (${\Theta}$), tilting angle (${\gamma}$) and the exposure conditions. In addition, the base period or filling factor of pair-PCs as well as their shapes could be changed by experimental conditions and nanosphere size. A 1.18-${\mu}m$-thick resist was spincoated on Si substrate and the multiple exposure was carried out at change of ${\gamma}$ and ${\Theta}$. Images of prepared 2D pair-PCs were observed by SEM. We believe that the MENSL method is a suitable useful tool to realize the pair-periodic arrays of large area.

TeOx(22 1차원 광자결정의 광학 특성평가 (Optical Properties of TeOx(2x One-dimensional Photonic Crystals)

  • 공헌;여종빈;이현용
    • 한국전기전자재료학회논문지
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    • 제27권12호
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    • pp.831-836
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    • 2014
  • One-dimensional (1D) photonic crystals (PCs) were prepared by $TeO_x(2<x<3)/SiO_2$ with the difference refractive index, and fabricated by sputtering technique from a $TeO_2$ and $SiO_2$ target. The $TeO_x$(2$Ar:O_2=40:10$). A 10-pair $TeO_x(2<x<3)/SiO_2$ 1D PCs were fabricated with the structure parameters of filling factor=0.5185, and period=410 nm. The properties of 1D PCs with and without a defect layer were evaluated by UV-VIS-NIR. A normal mode 1D PC have a photonic band gap (PBG) in the near infrared (NIR) region from 1,203 to 1,421 nm. In the case of 1D PC containing a defect layer, a defect level appears at 1,291 nm. The measured transmittance (T) spectra are nearly corresponding to calculated results. After He-Cd laser exposure, the defect level is shifted from 1,291 nm to 1,304 nm.