• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.1
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• pp.36-42
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• 2016

In multi-level-cell based storage devices, TLC NAND has been employed solid state drive due to cost effectiveness. Since TLC has slow performance and low endurance compared with MLC, TLC based storage has adopted SLC buffer scheme to improve performance. To improve SLC buffer scheme, this paper proposes page overwriting method in SLC block. This method provides data updates without erase operation within a limited number. When SLC buffer area is filled up, FTL should execute copying valid pages and erasing it. The proposed method reduces erase counts by 50% or more compared with previous SLC buffer scheme. Simulation results show that the proposed SLC buffer overwrite method achieves 2 times write performance improvement.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.17 no.4
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• pp.143-148
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• 2017

Flash Memory which is light and strong external shock as storage of small electronics like smartphone, digital camera, car black box has been widely used. Since the operation speed of the read operation and the write operation are different from each other, and the flash memory has the feature that it is not possible to overwrite, the delete operation is added to solve these problems. Wear-leveling must also be considered, since the number of erase times of the flash memory is limited. Many studies have been conducted on the substitutional algorithms of flash memory based on these characteristics of recent flash memories. So, to solve the problem that has existing buffer replacement algorithm this thesis divide page into 6 groups and when proposed algorithm select victim page, it consider reference page frequency and page recency.

• The KIPS Transactions:PartA
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• v.12A no.3 s.93
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• pp.205-214
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• 2005

Flash memory is at high speed used as storage of personal information utilities, ubiquitous computing environments, mobile phones, electronic goods, etc. This is because flash memory has the characteristics of low electronic power, non-volatile storage, high performance, physical stability, portability, and so on. However, differently from hard disks, it has a weak point that overwrites on already written block of flash memory is impossible to be done. In order to make an overwrite possible, an erase operation on the written block should be performed before the overwrite, which lowers the performance of flash memory highly. In order to solve this problem the flash memory controller maintains a system software module called the flash translation layer(FTL). Of many proposed FTL schemes, the log block buffer scheme is best known so far. This scheme uses a small number of log blocks of flash memory as a write buffer, which reduces the number of erase operations by overwrites, leading to good performance. However, this scheme shows a weakness of low page usability of log blocks. In this paper, we propose an enhanced log block buffer scheme, FAST(Full Associative Sector Translation), which improves the page usability of each log block by fully associating sectors to be written by overwrites to the entire log blocks. We also show that our FAST scheme outperforms the log block buffer scheme.

• KIPS Transactions on Computer and Communication Systems
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• v.12 no.1
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• pp.1-8
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• 2023

It is impossible to overwrite on an already allocated page in SSDs, so whenever a write operation occurs a page replacement with a clean page is required. To resolve this problem, SSDs have an internal flash translation layer called FTL that maps logical pages managed by a file system of operating system to currently allocated physical pages. SSD pages discarded due to write operations must be recycled through initialization, but since the number of initialization times is limited the FTL provides a caching function to reduce the number of writes in addition to the page mapping function, which is a core function. In this study, we focus on the FTL cache methodologies reducing the number of page writes and analyze the related algorithms, and propose a write-only cache strategy. As a result of experimenting with the write-only cache using a simulator, it showed an improvement of up to 29%.

• Journal of KIISE:Computer Systems and Theory
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• v.34 no.11
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• pp.599-609
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• 2007

Due to the restrictions of Flash memory such as overwrite limitation and write/erase operational unit differences, block cleaning is required in Flash memory based file systems and known as a key factor on the performance of file systems. In this paper, we identify three parameters, namely utilization, invalidity and uniformity, and analyze how the parameters affect the cost of block cleaning. The analysis show that as uniformity degrades, the cost of block cleaning increases drastically. To overcome this problem, we design a new modification-aware(MODA) page allocation scheme that strives to keep uniformity high by separating frequently-updating data from infrequently-updating data. Real implementation experiments conducted on an embedded system show that the MODA scheme can actually enhance uniformity of Flash memory, which consequently leads to reduce the cost of block cleaning with an average of 123%, compared to the traditional sequential allocation scheme that is used in YAFFS.

• Journal of KIISE:Computing Practices and Letters
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• v.16 no.3
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• pp.371-375
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• 2010

SSD is a storage medium based on NAND Flash memory. Because of its short latency, low power consumption, and resistance to shock, it's not only used in PC but also in server computers. Most SSDs use FTL to overcome the erase-before-overwrite characteristic of NAND flash. There are several types of FTL, but page mapped FTL shows better performance than others. But its usefulness is limited because of its large memory footprint for the mapping table. For example, 64MB memory space is required only for the mapping table for a 64GB MLC SSD. In this paper, we propose a novel caching scheme for the mapping table. By using the mapping-table-meta-data we construct a fully associative cache, and translate the address within O(1) time. The simulation results show more than 80 hit ratio with 32KB cache and 90% with 512KB cache. The overall memory footprint was only 1.9% of 64MB. The time overhead of cache miss was measured lower than 2% for most workload.

• Proceedings of the Korean Information Science Society Conference
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• 2005.11b
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• pp.172-174
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• 2005

플래시 메모리는 오늘날 다양한 형태로 우리 생활의 일부를 차지하고 있다. 휴대 전화기, MP3 플레이에, PDA등과 같은 모바일제품, 이동식 저장매체, 유비쿼터스 컴퓨팅 환경 등에 광범위하게 활용되고 있다. 이처럼 많은 분야에서 사용되는 주된 이유는 플래시 메모리의 장점인 저전력 비휘발성, 고성능, 물리적 안정성, 휴대성을 갖기 때문이다. 더불어 최근에는 Gb급 플래시 메모리도 개발되어 하드디스크의 자리를 대체할 수 있는 상황에 이르렀다. 하지만, 플래시 메모리는 하드디스크와 달리 이미 데이터가 기록된 블록에 대해 덮어쓰기(overwrite)가 되지 않는다는 특성을 갖고 있다. 덮어쓰기 위해서는 해당 블록을 지우고(즉, 소거(erase)) 쓰기 작업을 수행해야 한다. 이로 인해 플래시 메모리의 데이터 읽기/쓰기/소거에 비용이 하드 디스크와 같이 동일한 것이 아니라 서로 다르다(읽기 비용을 1로 가정할 경우 쓰기와 소거는 각각 8, 65)[1][5][6]. 따라서 OS, DBMS 등과 같은 시스템 소프트웨어에서 사용된 기존 버퍼 교체 기법은 플래시 메모리의 특성이 고려되지 않았기 때문에 플래시 메모리의 특성을 고려한 효율적인 버퍼 교체기법이 필요하다. 본 논문에서는 플래시 메모리의 서로 다른 연산 비용 고려한 새로운 버퍼 교체 기법을 제안한다.

• Journal of the Korea Society of Computer and Information
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• v.24 no.8
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• pp.9-17
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• 2019

In this paper, we propose a block mapping technique applicable to NAND flash memory. In order to use the NAND flash memory with the operating system and the file system developed on the basis of the hard disk which is mainly used in the general PC field, it is necessary to use the system software known as the FTL (Flash Translation Layer). FTL overcomes the disadvantage of not being able to overwrite data by using the address mapping table and solves the additional features caused by the physical structure of NAND flash memory. In this paper, we propose a new mapping method based on the block mapping method for efficient use of the NAND flash memory. In the case of the proposed technique, the data modification operation is processed by using a blank page in the existing block without using an additional block for the data modification operation, thereby minimizing the block unit deletion operation in the merging operation. Also, the frequency of occurrence of the sequential write request and random write request Accordingly, by optimally adjusting the ratio of pages for recording data in a block and pages for recording data requested for modification, it is possible to optimize sequential writing and random writing by maximizing the utilization of pages in a block.

• Journal of the Korea Society of Computer and Information
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• v.24 no.6
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• pp.1-9
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• 2019

Hard disks, which have long been used as secondary storage in computing systems, are increasingly being replaced by solid state drives (SSDs), due to their relatively fast data input / output speeds and small, light weight. SSDs that use NAND flash memory as a storage medium are significantly different from hard disks in terms of physical operation and internal operation. In particular, there is a feature that data overwrite can not be performed, which causes erase operation before writing. In order to solve this problem, a hot data for frequently updating a data for a specific page is distinguished from a cold data for a relatively non-hot data. Hot data identification helps to improve overall performance by identifying and managing hot data separately. Among the various hot data identification methods known so far, there is a technique of recording consecutive write requests by using a Bloom filter and judging the values by hot data. However, the Bloom filter technique has a problem that a new bit array must be generated every time a set of items is changed. In addition, since it is judged based on a continuous write request, it is possible to make a wrong judgment. In this paper, we propose a method using a counting filter for accurate hot data verification. The proposed method examines consecutive write requests. It also records the number of times consecutive write requests occur. The proposed method enables more accurate hot data verification.

• Journal of KIISE:Computer Systems and Theory
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• v.36 no.5
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• pp.412-421
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• 2009

Due to the physical characteristics of NAND flash memory, overwrite operations are not permitted at the same location, and therefore erase operations are required prior to rewriting. These extra operations cause performance degradation of NAND flash memory file system. Since it also has an upper limit to the number of erase operations for a specific location, frequent erases should reduce the lifetime of NAND flash memory. These problems can be resolved by delaying write operations in order to improve I/O performance: however, it will lower the cache hit ratio. This paper proposes a policy of page management using double cache for NAND flash memory file system. Double cache consists of Real cache and Ghost cache to analyze page reference patterns. This policy attempts to delay write operations in Ghost cache to maintain the hit ratio in Real cache. It can also improve write performance by reducing the search time for dirty pages, since Ghost cache consists of Dirty and Clean list. We find that the hit ratio and I/O performance of our policy are improved by 20.57% and 20.59% in average, respectively, when comparing them with the existing policies. The number of write operations is also reduced by 30.75% in average, compared with of the existing policies.