• Journal of the Korean Society for Precision Engineering
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• v.19 no.10
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• pp.156-162
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• 2002

There are many factors affecting the results of CMP (Chemical Mechanical Polishing). Among them, the temperature is related to the removal rate and WIWNU (Within Wafer Non-Uniformity). In other words, the removal rate is proportional to the temperature and the variation of temperature distribution on a pad affects the non-uniformity within a wafer. In the former case, the active chemistry improves the rate of chemical reaction and the removal rate becomes better. But, there are not many advanced studies. In the latter case, a kinematical analysis between work-piece and pad can be obtained. And such result analysed from the mechanical aspect can be directly related to the temperature distribution on a pad affecting WIWNU. Meanwhile, the temperature change affects the quantities of both slurry and pad. The change of a pH value of the slurry chemistry due to a temperature variation affects the surface state of an abrasive particle and hence the agglomeration of abrasives happens above the certain temperature. And the pH alteration also affects the zeta potential of a pad surface and therefore the electrical force between pad and abrasive changes. Such results could affect the removal rate and etc. Moreover, the temperature changes the 1st and 2nd elastic moduli of a pad which are closely related to the removal rate and the WIWNU.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.361-367
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• 2001

Recently, Chemical Mechanical Polishing(CMP) has become a leading planarization technique as a method for silicon wafer planarization that can meet the more stringent lithographic requirement of planarity for the future submicron device manufacturing. The SOI(Silicon On Insulator) wafer has received considerable attention as bulk-alternative wafer to improve the performance of semiconductor devices. In this paper, the objective of study is to investigate Material Removal Rate(MRR) and surface micro-roughness effects of slurry and pad in the CMP process. When particle size of slurry is increased, Material Removal rate increase. Surface micro-roughness is greater influenced by pad than by particle size of slurry. As a result of AM measurement, surface micro-roughness was improved from 27 $\AA$ Rms to 0.64 $\AA$Rms.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.12
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• pp.23-32
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• 2020

This study investigated the thermal degradation and fading behavior of PTT dyed with vat dye and its dyeing ability. The PTT sample was dyed with vat dye using an acid treatment and pad-steam method to improve the dyeing performance. This method made dye particle nanosize and allowed it to penetrate the polymer material easily. The sample dyed using the pad-steam method showed level dyeing and enhanced dyeing affinity, compared to the batch-dyeing method. The degradation behavior of PTT dyed with vat dye after each heat and UV treatment was examined with the change in tensile strength or K/S value on the sample. The tensile strength and K/S values of the sample dyed with vat dye after the heat and UV treatment decreased with increasing temperature and exposure time. Although they showed high degradation under severe conditions, its rate constant was improved compared to the samples dyed with disperse dye. Consequently, acid treatment and the pad-steam method resulted in the introduction of vat dye on PTT. In addition, the PTT dyed with vat dye showed enhanced thermal and UV resistance because of their high molecular weight and chemical structure for stable adsorption behavior.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.50-53
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• 2003

CMP (chemical mechanical polishing) process remained to solve several problems in deep sub-micron integrated circuit manufacturing process. especially consumables (polishing pad, backing film, slurry, pad conditioner), one of the most important components in the CMP system is the slurry. Among the composition of slurries (buffer solution, bulk solution, abrasive particle, oxidizer, inhibitor, suspension, antifoaming agent, dispersion agent), the abrasive particles are important in determining polish rate and planarization ability of a CMP process. However, the cost of abrasives is still very high. So, in order to reduce the high COO (cost of ownership) and COC (cost of consumables) in this paper, we have collected the silica abrasive powders by filtering after subsequent CMP process for the purpose of abrasive particle recycling. And then, we have studied the possibility of recycle of reused silica abrasive through the analysis of particle size and hardness. Also, we annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable removal rate and good planarity with commercial products. Consequently, we can expect the saving of high cost slurry.

• Fashion & Textile Research Journal
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• v.6 no.5
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• pp.667-672
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• 2004

Poly(ethylene terephthalate) (PET) fabrics were treated with a silica particle and phosphate flame retardant to determine the optimum process condition of the digital textile printing(DTP) media. The treating conditions for the study were 6 conditions, from F1 to F6, in which F3, F4 and F5 were treated with mixture of both silica particle and phosphate compound in process of pad, dry and cure fixation. F6 was treated with phosphate compound only and silica particle coating successively. Xanthan gum was used to control the migration of liquid phosphate compound onto PET fabrics. The change in surface morphology of fabrics treated with silica particle and phosphate compound was observed by SEM and flame retardance was evaluated by limiting oxygen index(LOI). It was observed that F6 was the excellent flame retardance and low bleeding in printing, Collectively, the printing characteristics of silica to cyan, magenta, yellow and black ink and flame retardance of fabrics finished with phosphate compound were identified in this study.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.1
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• pp.25-31
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• 2003

Airborne contaminant particles are intruded into optical disk drives(ODD) due to the flow caused by disk rotation and can be adhered to lens or disk surfaces, which causes decrease of laser power and increase of read/write errors. Such a phenomenon can be more serious as the space between the disk and the lens is reduced fur high-density storage devices. The purpose of this paper is to understand design parameters to reduce the particle intrusion into an ODD. Suggestions are made to prevent the particle intrusion that can decrease the stability of an ODD and also prevent the potential heat build-up problem. The sealing effect of drive and the forced injection of clean air (using HEPA filter) into the drive minimizes intrusion of the outside air and dusts in an ODD remarkably. Moreover it is proved by experiments that the installation of a heatproof pad to isolate heat generation part (PCB) from information read/write sections and the forced injection of dust-free air reduce the gas temperature inside the drive as well as the amount of particles intruded.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1522-1527
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• 2004

In this paper, slurry fluid motion, abrasive particle motion, and effects of groove sizing on the pads are numerically investigated in the 2D geometry. Groove depth is optimized in order to maximized the abrasive effect. The simulation results are analyzed in terms of shear stress on pad, groove and wafer, streamline and velocity vector. The change of groove depth entails vortex pattern change, and consequently affects material removal rate. Numerical analysis is very helpful for disclosing polishing mechanism and local physics.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2000.06a
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• pp.24-33
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• 2000

The effect of particulate contamination on friction and wear between a negative-pressure picoslider / tri-pad nanoslider and laser-textured disk was studied. Particles of different concentration were injected at the head-disk interface consisting of disks with various textures and slider types at different speed. Durability increased and coefficient of friction decreased as the disk speed increased in a contaminated environment. Frictional characteristics and durability in the data zone were better for those of the laser-textured zone. It was also found that durability of head-disk interface (HDI)decreased as the particle concentration increased. The interface durability with a picoslider was better than that with a nanoslider at any condition in a contaminated environment. Based on the test results, mechanisms were proposed to explain the reasons why durability with a picoslider was superior to that with a nanoslider.

• Tribology and Lubricants
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• v.16 no.6
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• pp.469-476
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• 2000

The effect of particulate contamination on the friction and wear between a negative-pressure picoslider/tri-pad nanoslider and laser-textured disk was studied. Particles of different concentration were injected at the head-disk interface consisting of disks with various textures and slider types at different speed. Durability increased and coefficient of friction decreased as the disk speed increased in a contaminated environment. Frictional characteristics and durability in the data Bone were better than those in the laser-textured zone. It was also found that durability of head-disk interface (HDI) decreased as the particle concentration increased. The interface durability with a picoslider was better than that with a nanoslider at any condition in a contaminated environment. Based on the test results, mechanisms were proposed to explain the reasons why durability with a picoslider was superior to that with a nanoslider.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.10
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• pp.1023-1028
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• 2009

Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-step CMP consists of Cu and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the chemical mechanical cleaning(CMC) is performed various conditions as a cleaning process. The CMC process combined mechanical cleaning by friction between a wafer and a pad and chemical cleaning by CMC solution consists of tetramethyl ammonium hydroxide (TMAH) / benzotriazole (BTA). This paper studies the removal of abrasive on the Cu wafer and the cleaning efficiency of CMC process.